IR2010SPBF vs IR2110SPBF Comparison

Detailed side-by-side comparison of IR2010SPBF by Infineon and IR2110SPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IR2010SPBF IR2110SPBF
Brand Infineon Infineon
Category Power MOSFET Drivers Power MOSFET Drivers
Lifecycle Status Active Active
Configuration Half-Bridge (high + low side) —
Number of Drivers 2 (independent high/low-side outputs) —
Offset Voltage (max) 200 V —
Peak Source/Sink Current 3 A / 3 A —
Logic Input Compatibility CMOS or LSTTL, down to 3.0 V 3.3 V CMOS / LSTTL
Propagation Delay (typ) 95 ns —
Rise / Fall Time (typ) [DATA_NEEDED: rise/fall time] —
VCC Supply Voltage (low side) 10 V to 20 V —
VB Bootstrap Supply (high side) VCC + 10 V to VCC + 20 V —
Operating Temperature -40C to +150C —
Shutdown Feature Yes (active input) —
Package 16-SOIC (SOIC-16) 16-pin SOIC (SO-16, DW suffix)
Mounting Type Surface Mount Surface Mount
MSL Level [DATA_NEEDED: MSL rating] —
RoHS Status Compliant (Pb-free PBF suffix) —
Drive Technology High-speed power MOSFET / IGBT driver —
Channel Matching Matched propagation delays for cross-conduction minimization —
Function — Half-bridge gate driver
Topology — High-side and low-side referenced output channels
Number of Channels — 2 (1 high-side, 1 low-side)
Logic Type — Non-inverting
Maximum Offset Voltage (Voffset) — 500 V
Gate Drive Supply Voltage (Vcc/VCC) — 10 V to 20 V
Peak Output Current (source/sink) — 2.0 A / 2.0 A
Typical Propagation Delay (ton/toff) — 94 ns / 94 ns
Rise/Fall Time (typical) — 25 ns / 17 ns
Bootstrap Diode — Integrated
Undervoltage Lockout (UVLO) — Yes, both Vcc and VCC
Operating Temperature Range — -40 C to +125 C
Technology — HVIC + latch-immune CMOS
Lead-Free / RoHS — Yes / Compliant (Pb-free PBF suffix)

Datasheets & Resources

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