IR2010SPBF vs IR2110SPBF Vergleich
Detaillierter Direktvergleich von IR2010SPBF von Infineon und IR2110SPBF von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | IR2010SPBF | IR2110SPBF |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | Power MOSFET Drivers | Power MOSFET Drivers |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $1,20 | $1,98 |
| Configuration | Half-Bridge (high + low side) | — |
| Number of Drivers | 2 (independent high/low-side outputs) | — |
| Offset Voltage (max) | 200 V | — |
| Peak Source/Sink Current | 3 A / 3 A | — |
| Logic Input Compatibility | CMOS or LSTTL, down to 3.0 V | 3.3 V CMOS / LSTTL |
| Propagation Delay (typ) | 95 ns | — |
| Rise / Fall Time (typ) | [DATA_NEEDED: rise/fall time] | — |
| VCC Supply Voltage (low side) | 10 V to 20 V | — |
| VB Bootstrap Supply (high side) | VCC + 10 V to VCC + 20 V | — |
| Betriebstemperatur | -40C to +150C | — |
| Shutdown Feature | Yes (active input) | — |
| Gehäuse | 16-SOIC (SOIC-16) | 16-pin SOIC (SO-16, DW suffix) |
| Montageart | Surface Mount | Surface Mount |
| MSL-Level | [DATA_NEEDED: MSL rating] | — |
| RoHS-Status | Compliant (Pb-free PBF suffix) | — |
| Drive Technology | High-speed power MOSFET / IGBT driver | — |
| Channel Matching | Matched propagation delays for cross-conduction minimization | — |
| Funktion | — | Half-bridge gate driver |
| Topologie | — | High-side and low-side referenced output channels |
| Number of Channels | — | 2 (1 high-side, 1 low-side) |
| Logic Type | — | Non-inverting |
| Maximum Offset Voltage (Voffset) | — | 500 V |
| Gate Drive Supply Voltage (Vcc/VCC) | — | 10 V to 20 V |
| Peak Output Current (source/sink) | — | 2.0 A / 2.0 A |
| Typical Propagation Delay (ton/toff) | — | 94 ns / 94 ns |
| Rise/Fall Time (typical) | — | 25 ns / 17 ns |
| Bootstrap Diode | — | Integrated |
| Undervoltage Lockout (UVLO) | — | Yes, both Vcc and VCC |
| Betriebstemperaturbereich | — | -40 C to +125 C |
| Technology | — | HVIC + latch-immune CMOS |
| Lead-Free / RoHS | — | Yes / Compliant (Pb-free PBF suffix) |