IRF640NPBF - 200V 18A N-Channel HEXFET MOSFET TO-220 | Infineon
부품 번호: IRF640NPBF ✓ 활성| 수량 | 단가 | 합계 |
|---|---|---|
| 1 | $1.95 | $1.95 |
| 10 | $1.62 | $16.20 |
| 100 | $1.28 | $128.00 |
| 500 | $1.05 | $525.00 |
| 1,000 | $0.88 | $880.00 |
IRF640NPBF 개요
A power MOSFET is a voltage-controlled semiconductor switch that uses an insulated gate (typically silicon dioxide) to modulate current flow between the source and drain terminals. HEXFET is Infineon's trade name (originally International Rectifier's) for its vertical-cell, hex-shaped power MOSFET structure that maximises channel density per silicon area and minimises on-resistance. Within the broader hierarchy, the IRF640NPBF sits under: power MOSFET -> discrete power transistor -> discrete semiconductor -> electronic component.
Key features include extremely low on-resistance per silicon area (a fifth-generation HEXFET hallmark), fast switching speed, dynamic dv/dt rating, full avalanche ruggedness, and a maximum operating junction temperature of 150 C. The TO-220AB package with its mounting tab enables direct heatsink attachment, and the simple three-terminal gate-source-drain configuration allows direct drive from standard 10 V logic-level gate drivers without intermediate buffer stages.
The fifth-generation HEXFET cell geometry combines advanced process techniques with a stripe-cell layout to deliver low RDS(on) per unit area while preserving the ruggedness and avalanche-energy rating that earlier generations were known for. Internally, the gate structure is optimised for fast switching and high dv/dt immunity, important in off-line SMPS, motor drive, and inverter applications where ringing and transient stresses can destroy lesser parts. The TO-220AB package also provides generous creepage distance well-suited to 200 V rails.
Typical applications include switched-mode power supplies (SMPS), DC-DC converters, motor drivers, relay and solenoid replacement circuits, battery management, uninterruptible power supplies (UPS), and low-frequency (<100 kHz) inverters for audio amplifiers, lighting ballasts, and induction heating. The 200 V rating gives comfortable headroom for rectified 120 V mains or 48 V telecom rails with margin for inductive spikes.
When designing with this part, ensure gate-drive headroom is correct (VGS = 10 V is recommended for lowest RDS(on)), add a gate-source resistor (typically 10-100 ohm) to suppress parasitic oscillation, and verify that the heatsink keeps Tj below 150 C under worst-case SOA conditions. The TO-220AB tab is electrically connected to the drain, so isolate with a thermal pad (e.g. silicone rubber with mica or ceramic) if the heatsink is grounded.
This page synthesises distributor pricing, drop-in TO-220AB alternatives, and practical thermal and PCB design notes not found in the bare manufacturer datasheet, giving engineers a single reference for sourcing and designing with the IRF640NPBF.
드롭인 대체품: IRF640NPBF — 동일 패키지, 핀 호환. PCB 재작업이 필요한 다른 패키지 부품은 제외됩니다.
이 시리즈의 변형
다음과 드롭인 호환되는 동일 시리즈 모델: IRF640NPBF (동일 폼 팩터 및 풋프린트) — 차이점: Technology, Package, Total Gate Charge (Qg), Mounting Type, RoHS Status.
빠른 비교 도구 — 나란히 비교할 대체 부품을 선택하십시오:
IRF1310NPBF
✅ 드롭인✓ 재고 있음
$0.98 / 개
데이터시트 보기 →IRF2805PBF
✅ 드롭인✓ 재고 있음
$1.38 / 개
데이터시트 보기 →IRFZ48NPBF
✅ 드롭인✓ 재고 있음
$0.65 / 개
데이터시트 보기 →IRFB7437PBF
✅ 드롭인✓ 재고 있음
$0.92 / 개
데이터시트 보기 →IRF640NPBF 최대 정격 & 전기적 특성
| Drain-to-Source Voltage (VDS) | 200 V |
| Continuous Drain Current (ID) at Tc | 18 A |
| Gate-to-Source Voltage (VGS) max | ±20 V |
| Static Drain-to-Source On-Resistance (RDS(on)) | 150 mOhm max at VGS = 10 V |
| Power Dissipation (PD) at Tc=25C | 150 W |
| Total Gate Charge (Qg) | 44.7 nC |
| 동작 접합 온도 | -55C to +150C |
| Technology | HEXFET (5th Generation) |
| 트랜지스터 유형 | N-Channel Enhancement Mode |
| 패키지 | TO-220AB (through-hole, 3-pin) |
| 실장 유형 | Through Hole |
| Avalanche Energy Rated | Yes |
| dv/dt Rating | Dynamic, rated |
| RoHS 상태 | Compliant |
| Lead-Free | Yes (PBF suffix) |
| Manufacturer | Infineon (formerly International Rectifier) |
IRF640NPBF 핀 구성
| 핀 1 | Gate — MOSFET gate control input; drive with 10V for full RDS(on) spec |
| 핀 2 | Drain — Main current terminal; electrically bonded to metal tab |
| 핀 3 | Source — Return terminal; also the reference for VGS measurement |
안전 동작 영역 (DC, Tc=25C)
일반적인 애플리케이션
IRF640NPBF 적합 용도: 6 애플리케이션s: Switched-Mode Power Supply (SMPS), DC Motor Drive (H-Bridge / Half-Bridge), Relay and Solenoid Replacement, Uninterruptible Power Supply (UPS) and Battery Management, Audio Amplifier Output Stage, Induction Heating and Lighting Ballast.
Switched-Mode Power Supply (SMPS)
The IRF640NPBF is well suited to low-frequency primary-side switching in off-line SMPS designs operating from rectified 120 V AC mains (peak ~170 V) or 48 V telecom rails. Its 200 V VDS rating provides comfortable headroom for inductive ringing and surge events, and its 150 W power dissipation rating allows up to ~18 A continuous operation at 25 C case temperature. Designers typically run the part at 50-100 kHz PWM where the 44.7 nC total gate charge is manageable and switching losses remain acceptable. The TO-220AB package enables direct clip-on heatsink attachment for thermal management at full rated load.
추천
DC Motor Drive (H-Bridge / Half-Bridge)
In brushed DC motor drive circuits, the IRF640NPBF serves as the low-side or high-side switch in H-bridge topologies driving 24-180 V DC motors up to 18 A continuous. Its 200 V rating tolerates the back-EMF spikes generated when the motor inductance is commutated, particularly during hard-switching or PWM braking. The TO-220AB package with its mounting tab supports a clip-on heatsink sized for the continuous dissipation at full motor stall current. For PWM frequencies up to ~25 kHz the switching losses stay within SOA; above that, gate-drive power becomes significant due to the 44.7 nC gate charge.
추천
Relay and Solenoid Replacement
The IRF640NPBF can directly replace mechanical relays and solenoids in DC switching applications up to 18 A, offering silent operation, no contact bounce, and indefinite mechanical life. With a 200 V rating it handles 24 V, 72 V, and 96 V systems with comfortable margin. Designers add a flyback diode across inductive loads to limit back-EMF; the IRF640NPBF is also rated for avalanche energy, so a TVS-less design can survive modest unclamped inductive transients. The TO-220AB package is electrically isolated on the mounting tab when used with a thermal pad, simplifying PCB layout in mixed-voltage control cabinets.
추천
Uninterruptible Power Supply (UPS) and Battery Management
In UPS and battery management circuits the IRF640NPBF operates as the low-side disconnect switch in 48 V or 96 V battery stacks, where its 200 V VDS rating handles transient over-voltage during load-dump or hot-swap events. The 18 A continuous rating suits mid-sized battery packs in telecom or industrial backup systems. Avalanche ruggedness allows operation into short-circuit fault conditions for the brief duration needed for upstream fusing. Low RDS(on) at 150 mOhm keeps conduction losses below 2% at full load, preserving battery runtime. The TO-220AB package is bolted to a chassis heatsink that also serves the upstream rectifier.
추천
Audio Amplifier Output Stage
The IRF640NPBF has a long history in high-power audio amplifier output stages, where its 200 V rating supports ±100 V supply rails and its 18 A continuous capability drives 4-8 ohm speaker loads to several hundred watts. The HEXFET technology provides low distortion at audio frequencies when biased appropriately, and the TO-220AB package is bolted to the amplifier chassis which doubles as a heatsink. Designers pair it with a complementary P-channel part on the other rail. The 44.7 nC gate charge is acceptable at audio-band switching rates (20 Hz to 20 kHz) where switching loss is negligible.
추천
Induction Heating and Lighting Ballast
In low-frequency (<100 kHz) induction heating and HID lighting ballast circuits, the IRF640NPBF operates as the resonant tank switch, commutating LC tanks at 20-50 kHz to drive the heating coil or ballast lamp. The 200 V rating tolerates the resonant tank voltages, which can exceed the DC bus by Q-factor times, and the avalanche rating allows zero-voltage-switching (ZVS) operation to recover commutation transients. The TO-220AB package handles the modest switching losses at these frequencies with a clip-on heatsink. Designers keep switching frequency below 100 kHz to manage gate-drive losses from the 44.7 nC Qg.
추천
추천 제품 요약
엔지니어링 참조 데이터: IRF640NPBF — 비교, 설계 지침 및 규정 준수 정보.
선택 가이드
대체품과의 비교
| 파라미터 | 이 제품 | IRF640NLPBF | IRFP250NPBF | IRFR540ZTRPBF | IRF1310NPBF | IRF2805PBF | IRFZ48NPBF | IRFB7437PBF | IRFR7540TRPBF |
|---|---|---|---|---|---|---|---|---|---|
| Package | TO-220AB | TO-262 (I2PAK) - different footprint | TO-247-3 - different footprint | TO-252 (DPAK) - different footprint | TO-220AB - same footprint | TO-220AB - same footprint | TO-220AB - same footprint | TO-220AB - same footprint | TO-252 (DPAK) - different footprint |
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon | Infineon | Infineon | Infineon | Infineon |
| Drain-to-Source Voltage (VDS) | 200 V | 200 V | 200 V | 100 V | 100 V | 75 V | 55 V | 40 V | 60 V |
| Continuous Drain Current (ID at Tc) | 18 A | 18 A | 30 A | 35 A | 42 A | 135 A | 64 A | 195 A | 100 A |
| RDS(on) max at VGS=10V | 150 mOhm | 150 mOhm | 75 mOhm | 44 mOhm | 30 mOhm | 4.7 mOhm | 14 mOhm | 1.4 mOhm | 5.4 mOhm |
| Power Dissipation (Tc=25C) | 150 W | 150 W | 180 W | 130 W | 170 W | 330 W | 190 W | 230 W | 160 W |
| Technology Generation | 5th Gen HEXFET | 5th Gen HEXFET | 5th Gen HEXFET | 5th Gen HEXFET | HEXFET | HEXFET | HEXFET | StrongIRFET | HEXFET |
주요 차별점
- Mature fifth-generation HEXFET technology with proven long-term availability (vs Newer StrongIRFET parts (e.g. IRFB7437PBF))
- Higher VDS rating suits 120V AC mains applications (vs IRFZ48NPBF (55V) and IRFB7437PBF (40V))
- Through-hole TO-220AB package enables robust heatsink attachment (vs IRFR540ZTRPBF (D-PAK) and IRFR7540TRPBF (D-PAK))
설계 노트
Estimated: At full 18 A continuous drain current with VDS = 200 V, conduction losses alone reach P = ID^2 * RDS(on) = 18^2 * 0.15 = 48.6 W, exceeding the 150 W package rating margin quickly if switching losses are also present. The TO-220AB thermal resistance theta_JC is typically 0.83 C/W, so the junction-to-case rise is P * 0.83 C/W. For reliable operation, mount the part on a heatsink rated to keep Tj below 125 C (75% of 150 C max), with thermal compound applied and the mounting torque set to 0.6 N-m to avoid tab cracking.
For TO-220AB through-hole designs, use a thermal pad (silicone rubber with fiberglass or mica) between the metal tab and the heatsink if the heatsink is grounded, because the tab is electrically bonded to the drain internally. A 4-40 or M3 screw with a star washer provides mechanical clamping; torque to 0.6 N-m. Keep the gate-source trace short (less than 20 mm) and add a 10-100 ohm gate-source resistor directly at the gate pin to suppress parasitic oscillation caused by the gate-drain Miller capacitance.
The 44.7 nC total gate charge means the IRF640NPBF is NOT suitable for high-frequency SMPS above ~200 kHz; switching losses scale with Qg * VGS * fSW and will dominate. For sub-100 kHz applications it is fine. Second common pitfall: driving the gate with only 5 V from a microcontroller GPIO will leave the MOSFET in the linear region with RDS(on) several times higher than the 150 mOhm spec, causing thermal runaway. Always drive with 10 V or use a gate-driver IC for full enhancement.
규정 준수 정보
PBF suffix denotes lead-free terminal plating per Infineon ordering information. RoHS and REACH compliance per Infineon product page; halogen-free status not explicitly stated in the provided data and marked unknown. Not AEC-Q100 qualified - this part targets industrial/commercial switching applications, not automotive.
