IRF7103TRPBF vs IRF7341GTRPBF 비교
다음의 상세 나란히 비교: IRF7103TRPBF 제조: Infineon 및 IRF7341GTRPBF 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
사양 비교
| 파라미터 | IRF7103TRPBF | IRF7341GTRPBF |
|---|---|---|
| 브랜드 | Infineon | Infineon |
| 카테고리 | MOSFETs | MOSFETs |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $0.47 | $0.76 |
| Manufacturer | Infineon Technologies (formerly International Rectifier) | — |
| Part Number | IRF7103TRPBF | — |
| FET Type | Dual N-Channel | — |
| Configuration | Common Source, Dual Die | Dual N-Channel |
| Drain-to-Source Voltage (VDS) | 50 V | — |
| Continuous Drain Current (ID) | 3 A | 5.1 A |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM value] | — |
| On-Resistance RDS(on) max | 130 mOhm @ VGS=10V | — |
| On-Resistance RDS(on) typ | 0.11 ohm | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) value] | [DATA_NEEDED: typical VGS(th) value] |
| Total Power Dissipation (PD) | 2 W | — |
| 동작 온도 범위 | -55C to +150C (TJ) | -55 C to +175 C |
| 패키지 | SO-8 (PG-DSO-8-902) | 8-SO (SOIC-8) |
| 실장 유형 | Surface Mount | Surface Mount |
| Technology | IR MOSFET™ (HEXFET equivalent) | IR HEXFET Planar MOSFET |
| Soldering Method | Vapour phase, infrared, wave soldering | — |
| MSL 레벨 | 1 | — |
| Lead-Free | Yes (Pb-free per TRPBF suffix) | Yes (PBF suffix) |
| RoHS 상태 | Compliant | Compliant |
| Drain-Source Voltage (VDS) | — | 55 V |
| On-Resistance (RDS(on)) max | — | 50 mOhm at VGS=10V |
| Power Dissipation (PD) | — | 2.4 W |
| Maximum Junction Temperature | — | 175 C |
| Input Capacitance (Ciss) | — | [DATA_NEEDED: Ciss typical] |
| Output Capacitance (Coss) | — | [DATA_NEEDED: Coss typical] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg typical] |