IRF7103TRPBF vs IRF7341GTRPBF Comparison
Detailed side-by-side comparison of IRF7103TRPBF by Infineon and IRF7341GTRPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IRF7103TRPBF | IRF7341GTRPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.47 | $0.76 |
| Manufacturer | Infineon Technologies (formerly International Rectifier) | β |
| Part Number | IRF7103TRPBF | β |
| FET Type | Dual N-Channel | β |
| Configuration | Common Source, Dual Die | Dual N-Channel |
| Drain-to-Source Voltage (VDS) | 50 V | β |
| Continuous Drain Current (ID) | 3 A | 5.1 A |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM value] | β |
| On-Resistance RDS(on) max | 130 mOhm @ VGS=10V | β |
| On-Resistance RDS(on) typ | 0.11 ohm | β |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) value] | [DATA_NEEDED: typical VGS(th) value] |
| Total Power Dissipation (PD) | 2 W | β |
| Operating Temperature Range | -55C to +150C (TJ) | -55 C to +175 C |
| Package | SO-8 (PG-DSO-8-902) | 8-SO (SOIC-8) |
| Mounting Type | Surface Mount | Surface Mount |
| Technology | IR MOSFETβ’ (HEXFET equivalent) | IR HEXFET Planar MOSFET |
| Soldering Method | Vapour phase, infrared, wave soldering | β |
| MSL Level | 1 | β |
| Lead-Free | Yes (Pb-free per TRPBF suffix) | Yes (PBF suffix) |
| RoHS Status | Compliant | Compliant |
| Drain-Source Voltage (VDS) | β | 55 V |
| On-Resistance (RDS(on)) max | β | 50 mOhm at VGS=10V |
| Power Dissipation (PD) | β | 2.4 W |
| Maximum Junction Temperature | β | 175 C |
| Input Capacitance (Ciss) | β | [DATA_NEEDED: Ciss typical] |
| Output Capacitance (Coss) | β | [DATA_NEEDED: Coss typical] |
| Total Gate Charge (Qg) | β | [DATA_NEEDED: Qg typical] |