IRF7341GTRPBF vs IRF7380TRPBF 비교
다음의 상세 나란히 비교: IRF7341GTRPBF 제조: Infineon 및 IRF7380TRPBF 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
사양 비교
| 파라미터 | IRF7341GTRPBF | IRF7380TRPBF |
|---|---|---|
| 브랜드 | Infineon | Infineon |
| 카테고리 | MOSFETs | MOSFETs |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $0.76 | $0.32 |
| Drain-Source Voltage (VDS) | 55 V | — |
| Continuous Drain Current (ID) | 5.1 A | 3.6 A |
| On-Resistance (RDS(on)) max | 50 mOhm at VGS=10V | — |
| Power Dissipation (PD) | 2.4 W | — |
| Maximum Junction Temperature | 175 C | — |
| Configuration | Dual N-Channel | Dual N-Channel MOSFET Array (2 independent FETs in one package) |
| Technology | IR HEXFET Planar MOSFET | IR MOSFET™ (Infineon HEXFET-style planar N-ch) |
| 패키지 | 8-SO (SOIC-8) | SO-8 (8-SO, SOIC-8) |
| 실장 유형 | Surface Mount | Surface Mount |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: typical VGS(th) value] | — |
| Input Capacitance (Ciss) | [DATA_NEEDED: Ciss typical] | — |
| Output Capacitance (Coss) | [DATA_NEEDED: Coss typical] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg typical] | — |
| 동작 온도 범위 | -55 C to +175 C | — |
| RoHS 상태 | Compliant | — |
| Lead-Free | Yes (PBF suffix) | — |
| Manufacturer | — | Infineon Technologies (formerly International Rectifier) |
| Part Number | — | IRF7380TRPBF |
| Drain-to-Source Voltage (VDS) | — | 80 V |
| On-Resistance RDS(on) max | — | 73 mOhm at VGS = 10 V |
| Total Power Dissipation (PD) | — | 2 W |
| 동작 접합 온도 | — | -55 C to +150 C |
| Gate Drive Voltage (typical) | — | 10 V (full RDS(on)); logic-level not guaranteed |
| Lead-Free / RoHS | — | Yes (Pb-free plating, suffix PBF) |
| Packaging | — | Tape & Reel (suffix TR) |
| Primary Application | — | High-frequency DC-DC converters |