IRF7380TRPBF vs IRF7854TRPBF 비교
다음의 상세 나란히 비교: IRF7380TRPBF 제조: Infineon 및 IRF7854TRPBF 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
사양 비교
| 파라미터 | IRF7380TRPBF | IRF7854TRPBF |
|---|---|---|
| 브랜드 | Infineon | Infineon |
| 카테고리 | MOSFETs | MOSFETs |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $0.32 | $0.48 |
| Manufacturer | Infineon Technologies (formerly International Rectifier) | — |
| Part Number | IRF7380TRPBF | — |
| Configuration | Dual N-Channel MOSFET Array (2 independent FETs in one package) | — |
| Drain-to-Source Voltage (VDS) | 80 V | — |
| Continuous Drain Current (ID) | 3.6 A | — |
| On-Resistance RDS(on) max | 73 mOhm at VGS = 10 V | — |
| Technology | IR MOSFET™ (Infineon HEXFET-style planar N-ch) | HEXFET (planar N-channel) |
| Total Power Dissipation (PD) | 2 W | — |
| 패키지 | SO-8 (8-SO, SOIC-8) | SO-8 |
| 실장 유형 | Surface Mount | Surface Mount |
| 동작 접합 온도 | -55 C to +150 C | — |
| Gate Drive Voltage (typical) | 10 V (full RDS(on)); logic-level not guaranteed | — |
| Lead-Free / RoHS | Yes (Pb-free plating, suffix PBF) | Yes (PBF suffix, lead-free) |
| Packaging | Tape & Reel (suffix TR) | — |
| Primary Application | High-frequency DC-DC converters | — |
| FET Type | — | N-Channel |
| Drain-Source Voltage (VDS) | — | 80 V |
| Continuous Drain Current (ID) at Ta=25°C | — | 10 A |
| Power Dissipation (PD) at Ta=25°C | — | 2.5 W |
| On-Resistance RDS(on) max at VGS=10V | — | 13.4 mΩ |
| Gate-Source Threshold Voltage VGS(th) max | — | 4.9 V |
| Total Gate Charge Qg | — | 27 nC |
| 동작 온도 범위 | — | -55°C to +150°C (TJ) |
| Qualification | — | JEDEC industrial, Normal level |
| Solder Process | — | Reflow and wave-solderable |
| Gate Drive Voltage (recommended) | — | 10 V |