IRF7416TRPBF vs IRLH5030TRPBF 비교
다음의 상세 나란히 비교: IRF7416TRPBF 제조: Infineon 및 IRLH5030TRPBF 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
사양 비교
| 파라미터 | IRF7416TRPBF | IRLH5030TRPBF |
|---|---|---|
| 브랜드 | Infineon | Infineon |
| 카테고리 | MOSFETs | MOSFETs |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $0.32 | $1.15 |
| FET Type | P-Channel | N-Channel |
| Technology | HEXFET (IR MOSFET) | IR MOSFET (HEXFET) |
| Drain-to-Source Voltage (VDS) | -30 V | 100 V |
| Continuous Drain Current (ID) at TA=25C | -10 A | 13 A |
| Pulsed Drain Current (IDM) | -50 A | — |
| Static Drain-to-Source On-Resistance (RDS(on)) max | 20 mOhm at VGS = -10 V | — |
| Gate-to-Source Voltage (VGS) max | [DATA_NEEDED: VGS max rating] | — |
| Gate Threshold Voltage (VGS(th)) | -1 V to -3 V | — |
| Total Gate Charge (Qg) | 61 nC | 44 nC |
| Power Dissipation (PD) max at TA=25C | 2.5 W | — |
| Thermal Resistance, Junction-to-Ambient (RthJA) | 50 C/W | — |
| 동작 접합 온도 범위 | -55 C to +150 C | — |
| 패키지 | 8-SO (SOIC-8) | PQFN-8 (SuperSO8 5x6 mm) |
| 실장 유형 | Surface Mount | Surface Mount |
| RoHS 상태 | Compliant | — |
| Lead-Free | Yes | — |
| MSL 레벨 | 1 (unlimited) | — |
| Manufacturer | — | Infineon Technologies (formerly International Rectifier) |
| Part Number | — | IRLH5030TRPBF |
| Continuous Drain Current (ID) at TC=25C | — | 100 A |
| On-Resistance RDS(on) max at VGS=10V | — | 9 mOhm |
| Gate Drive Voltage (optimized) | — | 10 V (capable of 4.5 V) |
| Power Dissipation at TA=25C | — | 3.6 W |
| Power Dissipation at TC=25C | — | 156 W |
| Thermal Resistance to PCB (RthJC) | — | 0.8 C/W |
| Profile Height | — | ≤ 0.9 mm |
| Qualification | — | JEDEC standard |
| Rg Tested | — | 100% |
| RoHS Compliance | — | Compliant (Lead-free, Bromide-free, Halogen-free) |
| Industry-Standard Pinout | — | Yes |