IRFS4321TRRPBF - 150V 83A N-Channel HEXFET MOSFET | Infineon
부품 번호: IRFS4321TRRPBF ✓ 활성| 수량 | 단가 | 합계 |
|---|---|---|
| 1 | $5.27 | $5.27 |
| 10 | $4.74 | $47.40 |
| 100 | $4.22 | $422.00 |
| 500 | $3.78 | $1,890.00 |
| 1,000 | $3.36 | $3,360.00 |
| 3,000 | $2.97 | $8,910.00 |
IRFS4321TRRPBF 개요
An N-channel power MOSFET is a voltage-controlled semiconductor switch in which a positive gate-to-source voltage creates a conductive n-type channel between drain and source, allowing current flow with very low voltage drop. HEXFET refers to Infineon's proprietary cellular MOSFET technology that places millions of parallel HEX (hexagonal) cells on a single die to minimize RDS(on) per unit silicon area. Within the broader power semiconductor hierarchy, MOSFETs sit beneath IGBTs (for very high voltage) and above bipolar transistors (for switching speed) in switching converter and motor drive applications.
Key features include an avalanche-rated single-pulse energy, integrated body diode for synchronous rectification, logic-level compatible gate drive at VGS=10V typical, and a 175C maximum operating junction temperature. The D2PAK package provides a low 0.65 C/W end-of-life thermal resistance junction-to-case after 1000 thermal cycles, enabling high-current operation with minimal external heatsinking. The device is RoHS compliant and lead-free (PBF suffix designation).
The IRFS4321 uses Infineon's advanced process technology to achieve an excellent figure of merit (FOM = RDS(on) x Qg) of approximately 1.07 Ohm-nC, balancing conduction and switching losses for high-frequency circuits. Its low gate charge reduces driver losses at high switching frequencies above 100 kHz, while its low on-resistance minimizes conduction losses in high-current paths.
Typical applications include uninterruptible power supplies (UPS), high-current synchronous rectification in switch-mode power supplies (SMPS), DC motor control, solar inverters, and industrial welding equipment. The 150V rating provides substantial margin for 48V bus telecom systems and 60V rectified industrial rails.
When designing with this device, ensure the gate driver delivers at least 10V VGS to fully enhance the channel and minimize RDS(on). A 10-ohm gate resistor is recommended to dampen parasitic ringing. The tab is electrically connected to the drain and must be soldered to a sufficiently large copper pad for heatsinking.
드롭인 대체품: IRFS4321TRRPBF — 동일 패키지, 핀 호환. PCB 재작업이 필요한 다른 패키지 부품은 제외됩니다.
이 시리즈의 변형
다음과 드롭인 호환되는 동일 시리즈 모델: IRFS4321TRRPBF (동일 폼 팩터 및 풋프린트) — 차이점: FET Type, Package, Technology.
빠른 비교 도구 — 나란히 비교할 대체 부품을 선택하십시오:
IRFS4321TRLPBF
✅ 드롭인✓ 재고 있음
$1.73 / 개
데이터시트 보기 →IRFS4321PBF
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
IRFS4321TRRPBF 최대 정격 & 전기적 특성
| FET Type | N-Channel MOSFET |
| Technology | HEXFET (IR MOSFET) |
| Drain-to-Source Voltage (VDS) | 150 V |
| Continuous Drain Current (ID) at 25C | 85 A (Tc) |
| RDS(on) Maximum at VGS=10V | 15 mOhm |
| Total Gate Charge (Qg) | 71 nC |
| Gate-to-Source Voltage Maximum | +/- 30 V |
| Power Dissipation (PD) | 350 W (Tc) |
| 동작 접합 온도 | -55C to +175C |
| Thermal Resistance Junction-to-Case (RthJC) | 0.65 C/W (end of life, D2PAK) |
| 패키지 | D2PAK (TO-263), 3-pin (2+Tab) |
| 실장 유형 | Surface Mount |
| Avalanche Energy Rating | Single-pulse avalanche rated (per datasheet) |
| Lead-Free / RoHS Status | Lead-Free (PBF suffix), RoHS Compliant |
IRFS4321TRRPBF 핀 구성
| 핀 1 | Gate — Gate drive input (VGS) |
| 핀 2 | Drain — Drain connection (also tied to metal tab) |
| 핀 3 | Source — Source connection |
IRFS4321TRRPBF 전력 경감 곡선
IRFS4321TRRPBF 전력 경감 곡선
일반적인 애플리케이션
IRFS4321TRRPBF 적합 용도: 6 애플리케이션s: Synchronous Rectification in SMPS, Uninterruptible Power Supplies (UPS), DC Motor Drive / Motion Control, Solar Inverters / Photovoltaic Systems, Industrial Welding Equipment, Telecom 48V Hot-Swap / ORing.
Synchronous Rectification in SMPS
The IRFS4321TRRPBF excels as the low-side synchronous rectifier in switch-mode power supplies. Its 15 mOhm RDS(on) at VGS=10V minimizes conduction loss on the secondary side of forward converters and half-bridge topologies, while the 71 nC total gate charge enables fast switching above 100 kHz without excessive driver losses. Placed anti-parallel to the primary-side MOSFET with its integrated body diode carrying dead-time conduction, the part eliminates the need for an external Schottky diode and improves overall efficiency by 1-2 percentage points over diode rectification. The 150V VDS rating provides comfortable margin for 48V bus converters and 60V rectified industrial rails.
추천
Uninterruptible Power Supplies (UPS)
The IRFS4321TRRPBF is well-suited for the inverter stage of online UPS systems. Its 85A continuous drain current rating supports multi-kilowatt inverter designs operating from a 48V or 96V battery bus, while the 150V VDS handles the rectified battery voltage with substantial margin for transients. The avalanche-rated single-pulse energy capability provides robustness against the switching transients common when load steps occur. The D2PAK package's 0.65 C/W end-of-life thermal resistance enables operation at high power levels with a modest copper pour on the PCB, reducing overall UPS size and cost.
추천
DC Motor Drive / Motion Control
The IRFS4321TRRPBF serves as the high-current switching element in brushed DC motor drives and the low-side switch in BLDC/PMSM inverters for motion control. Its 15 mOhm on-resistance minimizes voltage drop across the switching element, preserving battery voltage for the motor and reducing heat generation. The 71 nC gate charge allows PWM frequencies up to 50 kHz for smooth torque control without excessive switching loss. The 150V rating supports 48V and 72V industrial battery systems commonly used in forklifts, AGVs, and e-mobility applications.
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Solar Inverters / Photovoltaic Systems
The IRFS4321TRRPBF is used in string inverters and DC-DC converters for photovoltaic systems. Its 150V VDS rating covers the typical 60-cell or 72-cell solar panel open-circuit voltage (Voc around 40-50V) with substantial margin for cold-temperature Voc overshoot. The 15 mOhm RDS(on) keeps conversion efficiency above 98% in boost and buck converter stages, while the 85A current rating supports inverters up to 10 kW per MOSFET. The avalanche rating provides protection against the inductive kick of panel wiring and transformer leakage inductance.
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Industrial Welding Equipment
The IRFS4321TRRPBF is deployed in the switching sections of industrial welding power supplies, including inverter-based MIG/TIG welders and plasma cutters. The 85A continuous current rating and 350W power dissipation support the high peak currents encountered during arc welding, while the 150V VDS handles rectified mains up to 120V. The HEXFET technology's rugged avalanche capability absorbs the energy from arc-strike transients without device failure, a critical reliability feature for welding equipment operating in harsh industrial environments.
추천
Telecom 48V Hot-Swap / ORing
The IRFS4321TRRPBF can serve as the high-side ORing MOSFET or hot-swap controller switch in 48V telecom rectifier systems. Its 150V VDS comfortably exceeds the 48V nominal plus transient overshoot, while the 15 mOhm RDS(on) reduces voltage drop in the load path. In ORing applications, the body diode conducts during switch-over and the low on-resistance minimizes power dissipation once the MOSFET is fully enhanced. The D2PAK package simplifies PCB layout for high-current bus structures typical in telecom equipment racks.
추천
추천 제품 요약
엔지니어링 참조 데이터: IRFS4321TRRPBF — 비교, 설계 지침 및 규정 준수 정보.
선택 가이드
대체품과의 비교
| 파라미터 | 이 제품 | IRFS4321TRLPBF | IRFS4321PBF |
|---|---|---|---|
| Brand | Infineon | Infineon | Infineon |
| Package | D2PAK (TO-263) | D2PAK (TO-263) - same | D2PAK (TO-263) - same |
| Drain-to-Source Voltage (VDS) | 150 V | 150 V | 150 V |
| Continuous Drain Current (ID at 25C) | 85 A | 85 A | 85 A |
| RDS(on) Maximum at VGS=10V | 15 mOhm | 15 mOhm | 15 mOhm |
| Total Gate Charge (Qg) | 71 nC | 71 nC | 71 nC |
| Power Dissipation (PD) | 350 W | 350 W | 350 W |
| Reel/Packaging Type | Tape & Reel (TRR orientation) | Tape & Reel (TRL orientation) | Tube |
| RoHS / Lead-Free | Yes (PBF suffix) | Yes (PBF suffix) | Yes (PBF suffix) |
주요 차별점
- Reverse-orientation tape-and-reel packaging (vs IRFS4321TRLPBF)
- Lead-free / RoHS compliant (PBF suffix) (vs Older IRFS4321 (non-PBF) variants)
- Surface-mount D2PAK package (vs IRFS4321 (through-hole TO-220))
설계 노트
Estimated: At full 85A load with 100mV drop across RDS(on), conduction loss is approximately 8.5W. The D2PAK package's RthJC of 0.65 C/W means a junction temperature rise of 5.5C above case temperature at this power level. For sustained high-current operation, ensure the PCB copper pad under the tab provides at least 1 square inch of 2oz copper connected to a thermal plane, or attach an external heatsink. The tab is electrically tied to the drain, so thermal isolation is not possible.
Layout the D2PAK land pattern per IPC-7351 guidelines with a minimum copper pad area of approximately 150-200 square mm to spread heat. Place the gate driver within 25mm of the gate pin to minimize parasitic inductance and ringing. Use a 10-ohm gate-source resistor to prevent false turn-on from dv/dt induced gate charge, and consider a small (1-10 ohm) gate series resistor to dampen ringing when driving fast pulses.
Do not exceed VGS of +/-30V; gate oxide breakdown is permanent. The body diode has a slow reverse recovery and is not suitable as a primary freewheeling diode above 50 kHz - use an external SiC or GaN Schottky diode in parallel for very high frequency designs. The 'TRR' (reverse) reel orientation may not match all pick-and-place feeders - confirm with the manufacturer's packaging specification before high-volume assembly.
규정 준수 정보
RoHS compliant per Infineon product page and 'PBF' suffix designation in MPN. Lead-free reflow soldering compatible. Not AEC-Q100 qualified - this is an industrial/consumer grade part. Halogen-free status not confirmed in provided data.
