MPXV5050DP vs MPXV5050VC6T1 비교
다음의 상세 나란히 비교: MPXV5050DP 제조: NXP Semiconductors 및 MPXV5050VC6T1 제조: STMicroelectronics. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
NXP Semiconductors
MPXV5050DP - 50 kPa Differential Pressure Sensor | NXP Semiconductors
MPXV5050DP ✓ 활성사양 비교
| 파라미터 | MPXV5050DP | MPXV5050VC6T1 |
|---|---|---|
| 브랜드 | NXP Semiconductors | STMicroelectronics |
| 카테고리 | Pressure Sensors | Pressure Sensors |
| 수명 주기 상태 | 활성 | 활성 |
| Pressure Type | Differential | Vacuum / Negative Gauge |
| Operating Pressure Range | 0 kPa to 50 kPa (0 psi to 7.25 psi) | 0 to -50 kPa (0 to -7.25 PSI) |
| Maximum Overload Pressure | 200 kPa | — |
| Supply Voltage (Vdd) | 4.75 V to 5.25 V (5 V typical, max 6.0 V) | — |
| 공급 전류 | [DATA_NEEDED: supply current] | 5 mA typical |
| Output Type / Interface | Analog ratiometric voltage | — |
| 출력 전압 범위 | 0.2 V to 4.7 V at Vdd = 5 V | — |
| Output Function | Vout = 5 V x (0.009 x P_kPa - 0.045) | — |
| Accuracy | [DATA_NEEDED: accuracy (%FSO)] | ±5% (0°C to 85°C) [DATA_NEEDED: full accuracy spec] |
| Port Configuration | Dual ports, same side (differential) | Top port, vertical tube, 0.13" (3.17 mm) tube |
| Port Tube Diameter | 3.3 mm (0.13 in) | — |
| 동작 온도 | 0 C to +85 C | -40°C to +85°C [DATA_NEEDED: full operating range] |
| Package Type | 8-BSOP (SO8), SOT1693-1, 12.06 mm x 12.06 mm | — |
| 실장 유형 | Surface Mount | Surface Mount |
| AEC-Q100 Qualification | Yes | — |
| RoHS 상태 | [DATA_NEEDED: RoHS status] | Compliant (verified via distributor page) |
| Maximum Overpressure | — | 200 kPa |
| Supply Voltage (VCC) | — | 4.75 V to 5.25 V (typical 5.0 V) |
| Analog Output Range | — | 0.1 V to 4.6 V at 5 V supply (ratiometric) |
| Sensitivity | — | 90 mV/kPa |
| 출력 유형 | — | Ratiometric analog, single-ended |
| Storage Temperature | — | [DATA_NEEDED: storage temperature] |
| Response Time | — | [DATA_NEEDED: response time] |
| 패키지 / 케이스 | — | 8-SMD, Gull Wing, SOP-8 (case 1737-02) [DATA_NEEDED: case dimensions] |
| On-Chip Signal Conditioning | — | Yes (amplified, temperature-compensated, calibrated) |
| Technology | — | Piezoresistive MEMS with bipolar op-amp network |