1EDI60N12AFXUMA1 - 1200V Isolated Gate Driver, 10A Source/9.4A Sink | Infineon
MPN: 1EDI60N12AFXUMA1 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $3.85 | $3.85 |
| 10 | $3.42 | $34.20 |
| 100 | $2.96 | $296.00 |
| 500 | $2.58 | $1,290.00 |
| 1,000 | $2.21 | $2,210.00 |
Drop-in alternatives for 1EDI60N12AFXUMA1 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
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1EDI60H12AFXUMA1
✅ Drop-In📋 Reference alternative (not in catalog)
1EDI60N12AFXUMA1
✅ Drop-In✓ In Stock
$2.21 / Unit
View Datasheet →1EDN6550BXTSA1
✅ Drop-In✓ In Stock
$0.44 / Unit
View Datasheet →1EDI60N12AFXUMA1 Maximum Ratings & Electrical Characteristics
| Driver Configuration | Single high-side, galvanically isolated |
| Number of Channels | 1 |
| Isolation Type | Magnetic (coreless transformer) |
| Isolation Voltage | 1200 V working voltage |
| Maximum Output Voltage | 40 V |
| Source Current (typ.) | 10 A |
| Sink Current (typ.) | 9.4 A |
| Supply Voltage (VDD) | 3.1 V to 17 V |
| Propagation Delay (typ.) | 120 ns |
| Input Logic Compatibility | 3.3 V and 5 V CMOS/TTL |
| Creepage Distance (min.) | 4 mm |
| Short-Circuit Clamping | Yes (separate sink/source outputs) |
| Operating Temperature | -40C to +125C |
| Package | PG-DSO-8-51 (DSO-8) |
| Mounting Type | Surface Mount |
| RoHS Status | Compliant |
1EDI60N12AFXUMA1 Pin Configuration
| Pin 1 | VCC — Primary-side supply voltage (3.1V to 17V) |
| Pin 2 | IN+ — Non-inverting PWM input |
| Pin 3 | IN- — Inverting PWM input |
| Pin 4 | GND1 — Primary-side ground (logic reference) |
| Pin 5 | VDD — Secondary-side supply voltage (3.1V to 17V) |
| Pin 6 | OUT — Source output (drives MOSFET gate high) |
| Pin 7 | SEP — Sink output (drives MOSFET gate low) |
| Pin 8 | GND2 — Secondary-side ground (MOSFET source reference) |
Safe Operating Area (SOA) & Thermal Characteristics
No official SOA curve available for this component. Always operate within absolute maximum ratings specified in the datasheet. Ensure adequate cooling and derate as needed.
Typical Applications
1EDI60N12AFXUMA1 is suitable for 6 applications: Industrial Motor Drives, Solar Inverters, Uninterruptible Power Supplies (UPS), Welding Power Supplies, Induction Heating Systems, EV Onboard Chargers.
Industrial Motor Drives
The 1EDI60N12AFXUMA1 is purpose-built for industrial motor drives driving 600-1200 V IGBT or CoolMOS half-bridges. Its 10 A source / 9.4 A sink capability rapidly charges multi-nC gate capacitances, reducing switching losses at high PWM frequencies (up to 100 kHz). The 1200 V working-voltage isolation with 4 mm creepage meets reinforced-insulation requirements for 400-690 VAC industrial mains, while the 120 ns propagation delay preserves PWM fidelity. Placed between the MCU/DSP and the inverter power stage, it provides the galvanic barrier essential for protecting low-voltage control electronics from high-voltage transients. Compared with opto-isolated drivers, the coreless-transformer design delivers higher CMTI tolerance, critical in noisy motor environments.
Recommended
Solar Inverters
In string and central solar inverters, the 1EDI60N12AFXUMA1 drives the high-side switches of the boost PFC and DC-AC stages operating at 600-1200 V. Its 3.1 V to 17 V VDD range accepts both 5 V logic from the digital controller and 12 V/15 V rails, simplifying power-tree design. The separate OUT (source) and SEP (sink) pins allow independent gate-resistor selection, so engineers can tune turn-on dV/dt to control EMI while keeping turn-off fast for low switching loss. Internal short-circuit clamping protects the driven MOSFET during desaturation events common in photovoltaic input surges, while the 4 mm creepage and 1200 V isolation rating clear UL 1741 and IEC 62109 safety requirements.
Recommended
Uninterruptible Power Supplies (UPS)
Online UPS systems rely on the 1EDI60N12AFXUMA1 to drive the high-voltage IGBTs in the rectifier and inverter stages that switch between mains, battery, and load. The driver's 10 A source / 9.4 A sink outputs handle the gate-charge requirements of large 1200 V IGBT modules, keeping switching transitions under 100 ns for high efficiency. The 1200 V working isolation protects the control DSP from mains transients during grid disturbances, while the 3.1 V to 17 V supply range simplifies integration with battery-derived 12 V or 15 V rails. Wide operating temperature range (-40 C to +125 C) suits the harsh thermal environment inside industrial UPS cabinets where forced cooling may be limited.
Recommended
Welding Power Supplies
Inverter-based welding machines, the 1EDI60N12AFXUMA1 drives the primary-side IGBTs of the high-frequency inverter that steps mains voltage down to welding current. Its 120 ns propagation delay and matched turn-on/turn-off timing ensure clean PWM at 20-100 kHz switching frequencies, which is essential for stable arc control and spatter reduction. The 1200 V isolation rating comfortably exceeds the peak rectified mains voltage of single-phase 230 V or three-phase 400 V inputs. The robust PG-DSO-8-51 package with 4 mm creepage handles the high-dV/dt noise typical of welding inverters, while the integrated short-circuit clamping protects IGBTs during arc short events that occur as part of normal welding operation.
Recommended
Induction Heating Systems
Induction cooking and industrial induction heaters switch at high frequencies (20-200 kHz) to drive resonant L-C tanks. The 1EDI60N12AFXUMA1's 10 A source current enables fast gate charging of 1200 V CoolMOS devices at these frequencies, minimizing switching loss and keeping efficiency above 95%. Its tight propagation-delay matching maintains the precise dead-time control required to prevent shoot-through in half-bridge resonant topologies. The 4 mm creepage distance clears IEC 60335 safety requirements for household induction cooktops. The wide VDD range (3.1-17 V) accommodates both logic-level and standard gate-drive supplies common in induction heating designs.
Recommended
EV Onboard Chargers
Onboard chargers (OBCs) for electric vehicles use the 1EDI60N12AFXUMA1 to drive the high-voltage PFC and LLC stages that convert AC mains to DC battery voltage. Its 1200 V working voltage handles the rectified 400 V or 800 V EV battery systems, and the reinforced isolation with 4 mm creepage meets IEC 61851 and ISO 6469 safety standards for EV charging. The 10 A source / 9.4 A sink capability rapidly switches CoolMOS or SiC MOSFETs at the high frequencies needed for compact OBC designs. Coreless-transformer isolation eliminates the aging concerns of optocouplers, important for automotive designs targeting 15+ year service life.
Recommended
Recommended Products Summary
Engineering reference data for 1EDI60N12AFXUMA1 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | 1EDI60H12AFXUMA1 | 1EDI60N12AFXUMA1 | 1EDN6550BXTSA1 |
|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon |
| Package | PG-DSO-8-51 | PG-DSO-8-51 - same | PG-DSO-8-51 - same | PG-DSO-8-51 - same |
| Isolation Voltage | 1200 V | 1200 V | 1200 V | Not isolated (low-side only) |
| Source Current (typ.) | 10 A | 10 A | 10 A | 4 A |
| Sink Current (typ.) | 9.4 A | 9.4 A | 9.4 A | 4 A |
| Supply Voltage (VDD) | 3.1 V to 17 V | 3.1 V to 17 V | 3.1 V to 17 V | 4.5 V to 20 V |
| Propagation Delay (typ.) | 120 ns | 120 ns | 120 ns | 20 ns |
| Configuration | Single high-side, isolated | Single high-side, isolated | Single high-side, isolated | Single low-side, non-isolated |
| CMTI | 50 kV/us (typical) | >100 kV/us | 50 kV/us | Not applicable |
Key Differentiators
- Higher source/sink current than comparable isolated drivers (vs 1EDN6550BXTSA1)
- Galvanic isolation eliminates optocoupler aging (vs Traditional optocoupler-based gate drivers)
- Separate source/sink pins for independent rise/fall control (vs Most competing drivers with single output pin)
Design Notes
Place a low-ESR decoupling capacitor (1 uF ceramic minimum, 10 uF recommended) within 5 mm of the VDD pin (pin 5) to provide the high peak currents needed during fast MOSFET switching. Add a 100 nF high-frequency bypass cap in parallel. Route the OUT and SEP traces directly to the MOSFET gate, keeping the gate-drive loop area under 0.5 cm² to minimize parasitic inductance that causes ringing and potential shoot-through.
At 100 kHz switching frequency driving a 20 nC CoolMOS gate charge, the 1EDI60N12AFXUMA1 dissipates roughly 0.4 W in the driver output stage. The PG-DSO-8-51 package has a thermal resistance of approximately 100 C/W, producing a 40 C junction temperature rise above ambient. Ensure copper pours on both GND2 and the exposed pad region (where present) to keep junction temperature below 125 C. Forced cooling is generally not required for normal operation but recommended in sealed enclosures.
Do not connect IN+ and IN- together; configure them per the datasheet truth table (typically IN- tied to GND1 for non-inverting operation, or IN+ tied to VCC for inverting). Avoid routing primary-side and secondary-side ground planes under the isolation barrier to maintain creepage. The 1200 V rating is the working voltage, not a transient rating; add TVS protection across the MOSFET drain-source if the application sees voltage spikes beyond the device rating.
Compliance Information
RoHS compliant per Infineon product page. Not AEC-Q100 qualified - use automotive-grade EiceDRIVER variants for vehicle applications. Halogen-free per Infineon Green Product policy.
