BSS308PEH6327XTSA1 - P-Ch -30V -2A OptiMOS MOSFET | Infineon | SOT-23
부품 번호: BSS308PEH6327XTSA1 ✓ 활성| 수량 | 단가 | 합계 |
|---|---|---|
| 1 | $0.42 | $0.42 |
| 10 | $0.36 | $3.60 |
| 100 | $0.24 | $24.00 |
| 500 | $0.18 | $90.00 |
| 1,000 | $0.14 | $140.00 |
| 3,000 | $0.11 | $330.00 |
BSS308PEH6327XTSA1 개요
What is a small-signal P-channel MOSFET? A P-channel enhancement-mode MOSFET is a type of field-effect transistor (FET) that conducts when a negative voltage is applied to its gate relative to its source. The 'small-signal' classification refers to devices typically used for switching and amplification at currents under approximately 5 A, in contrast to high-power MOSFETs intended for kilowatt-scale converters. P-channel devices simplify high-side switching circuits by removing the need for a charge pump or bootstrap driver, since the gate can be driven relative to ground.
Key features include a maximum drain-source on-resistance RDS(on) of 80 mΩ at VGS = -10 V, an operating temperature range of -55 °C to +150 °C, and a power dissipation rating of 500 mW on a standard FR4 board. The device is supplied on 3000-piece reels in Tape & Reel packaging and is fully RoHS compliant. The OptiMOS process technology provides an excellent figure of merit (FOM = RDS(on) × Qg), making this part particularly effective for low-loss load switching and small DC-DC converter sections.
Typical applications include power-rail load switching in portable and battery-powered devices, USB On-The-Go (OTG) power muxing, reverse-polarity protection, level shifters, and general-purpose switching in automotive body electronics and infotainment subsystems. Designers frequently select this part where a P-channel high-side switch is preferred to simplify gate drive.
When designing with this device, ensure that VGS never exceeds the +/-20 V absolute maximum and that adequate gate-source pulldown is provided to prevent inadvertent turn-on during transients. A small gate-source resistor (typically 10 kΩ) is recommended to discharge the gate capacitance and harden the part against dv/dt-induced turn-on.
드롭인 대체품: BSS308PEH6327XTSA1 — 동일 패키지, 핀 호환. PCB 재작업이 필요한 다른 패키지 부품은 제외됩니다.
이 시리즈의 변형
다음과 드롭인 호환되는 동일 시리즈 모델: BSS308PEH6327XTSA1 (동일 폼 팩터 및 풋프린트) — 차이점: Package, Technology, Drain-Source Voltage (VDS), Qualification, Continuous Drain Current (ID).
빠른 비교 도구 — 나란히 비교할 대체 부품을 선택하십시오:
BSS308PE
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
BSS308PEH6327
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
FDN360P
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
AO3401A
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
DMP3098L-7
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
BSS308PEH6327XTSA1 최대 정격 & 전기적 특성
| Manufacturer | Infineon Technologies |
| Part Family | OptiMOS P (small signal / small power MOSFET) |
| 트랜지스터 유형 | P-Channel Enhancement Mode MOSFET |
| Drain-Source Voltage (VDS) | -30 V |
| Continuous Drain Current (ID) | -2 A (Ta) |
| RDS(on) Max | 80 mΩ at VGS = -10 V |
| Gate-Source Voltage (VGS) Max | +/-20 V |
| Power Dissipation (PD) | 500 mW (Ta) |
| 동작 온도 범위 | -55 °C to +150 °C |
| 패키지 / 케이스 | PG-SOT23 (SOT-23-3) |
| 실장 유형 | Surface Mount |
| 핀 수 | 3 |
| Qualification | AEC-Q101 Automotive |
| RoHS 상태 | Compliant |
| Packaging | Tape & Reel (T/R) |
| Standard Reel Quantity | 3000 pcs |
BSS308PEH6327XTSA1 핀 구성
| 핀 1 | Gate — Gate control input; pull below source to turn on P-channel |
| 핀 2 | Source — Source terminal; connects to higher-voltage rail in high-side switch |
| 핀 3 | Drain — Drain terminal; connects to load in high-side switch |
안전 동작 영역 (BSS308PEH6327XTSA1)
일반적인 애플리케이션
BSS308PEH6327XTSA1 적합 용도: 6 애플리케이션s: High-Side Load Switch in Battery-Powered Devices, USB On-The-Go (OTG) Power Muxing, Reverse-Polarity Protection Circuit, Automotive Body Electronics and Lighting, Battery Pack Discharge and Protection FET, Level Shifter and Logic Translation.
High-Side Load Switch in Battery-Powered Devices
The BSS308PEH6327XTSA1's P-channel enhancement-mode architecture and -30 V VDS rating make it ideal for high-side load switching in battery-powered and portable designs. By sourcing the load directly from the positive rail, a P-channel switch eliminates the need for a charge pump or bootstrap driver that an N-channel high-side switch would require, simplifying the gate-drive circuit to a single pulldown resistor. With RDS(on) of 80 mΩ at VGS = -10 V, conduction loss at -2 A is approximately 320 mW, well within the 500 mW SOT-23 dissipation limit and ideal for sub-2 A rail switching. Typical use is power-rail gating in smartphones, wearables, and IoT sensor nodes, where the part's 500 mW PD rating on a standard FR4 board is sufficient. Designers should place a 100 kΩ gate-to-source pulldown resistor to prevent dv/dt-induced turn-on during load transients.
추천
USB On-The-Go (OTG) Power Muxing
The BSS308PEH6327XTSA1 is well-suited for USB OTG power-mux circuits where a portable device must source 5 V to an external accessory and also accept 5 V from a host. Its -30 V VDS provides substantial margin above the 5 V rail, while the 80 mΩ RDS(on) keeps conduction loss below 160 mW at 1.4 A typical OTG current, preserving efficiency and thermal headroom. The P-channel topology naturally ORs two power sources by tying source to the higher-potential rail, eliminating one diode drop that would otherwise waste 200-400 mW. The part's SOT-23-3 footprint fits in the tight PCB real estate next to a USB-C connector, and its AEC-Q101 qualification allows the same BOM to serve both consumer and automotive USB ports. A 100 kΩ gate pulldown and 10 kΩ gate-source resistor ensure defined off-state behavior when neither source is present.
추천
Reverse-Polarity Protection Circuit
The BSS308PEH6327XTSA1 serves as an excellent reverse-polarity protection element when wired as a high-side P-channel switch with drain at the protected load and source at the external input. In normal operation, the gate is held low by a pulldown resistor, the P-channel MOSFET is on, and current flows to the load with only 80 mΩ of series resistance - far less loss than a Schottky diode solution which typically drops 300-500 mV. If reverse polarity is applied, the gate-to-source voltage becomes positive, the MOSFET turns off within microseconds, and the load is protected. The -30 V VDS rating provides ample margin for transient overshoots on 12 V automotive rails, and the 500 mW power dissipation limit supports continuous currents up to approximately 2 A. This circuit is widely used in industrial sensors, battery packs, and automotive accessory feeds.
추천
Automotive Body Electronics and Lighting
The BSS308PEH6327XTSA1's AEC-Q101 automotive qualification and -30 V VDS rating make it a strong fit for automotive body-electronics loads such as interior LED drivers, mirror-adjust motors, and accessory power outlets. The P-channel topology simplifies gate drive from the vehicle's 12 V battery rail, requiring only a low-side NPN transistor or open-drain GPIO to switch the gate. With 80 mΩ RDS(on) and 500 mW power dissipation, the part can handle 1-2 A continuous loads typical of LED strips, small actuators, and relay coils. The -55 °C to +150 °C operating range covers the full automotive underhood and cabin temperature span. For higher-current loads the part can be paralleled or upgraded to a larger P-channel MOSFET in the same Infineon OptiMOS family.
추천
Battery Pack Discharge and Protection FET
The BSS308PEH6327XTSA1 functions as a compact low-side or high-side protection FET in single-cell and dual-cell Li-ion battery packs where space is at a premium. With 80 mΩ RDS(on), 2 A continuous current capability, and a SOT-23-3 footprint, it offers a useful tradeoff between conduction loss and board area for sub-2 A applications such as wearables, hearables, and IoT sensor nodes. The P-channel topology enables the battery to be fully disconnected from the load during shipment or fault conditions, eliminating the parasitic drain of an always-on circuit. The 500 mW power dissipation limit supports continuous 2 A discharge with adequate copper thermal relief, and the AEC-Q101 qualification allows the same component to be used in automotive key fobs and Tire Pressure Monitoring System (TPMS) sensors.
추천
Level Shifter and Logic Translation
The BSS308PEH6327XTSA1 is widely used as a discrete level shifter between low-voltage MCUs (1.8 V or 3.3 V GPIO) and higher-voltage loads such as 5 V, 12 V, or 24 V peripherals. By connecting the source to the higher rail and pulling the gate low via a resistor divider or transistor, an MCU GPIO can switch the P-channel MOSFET on and off, achieving rail-to-rail translation with very little propagation delay (sub-100 ns typical). The -30 V VDS rating covers the most common logic levels including legacy 24 V industrial signal rails, while 80 mΩ RDS(on) keeps the high-level output close to the rail voltage. The SOT-23-3 footprint allows the level shifter to be placed adjacent to the connector or load. This circuit pattern appears in PLC digital outputs, sensor interfaces, and industrial control modules.
추천
추천 제품 요약
엔지니어링 참조 데이터: BSS308PEH6327XTSA1 — 비교, 설계 지침 및 규정 준수 정보.
선택 가이드
대체품과의 비교
| 파라미터 | 이 제품 | BSS308PE | BSS308PEH6327 | FDN360P | AO3401A | DMP3098L-7 |
|---|---|---|---|---|---|---|
| Package | SOT-23-3 (PG-SOT23) | SOT-23-3 - same | SOT-23-3 - same | SOT-23-3 - same | SOT-23-3 - same | SOT-23-3 - same |
| Brand | Infineon | Infineon | Infineon | onsemi | Alpha & Omega Semiconductor | Diodes Incorporated |
| VDS Max | -30 V | -30 V | -30 V | -30 V | -30 V | -30 V |
| Continuous Drain Current (ID) | -2 A | -2 A | -2 A | -2 A | -4 A | -3.8 A |
| RDS(on) Max | 80 mΩ at VGS = -10 V | 80 mΩ | 80 mΩ | 80 mΩ | 50 mΩ | 65 mΩ |
| Power Dissipation | 500 mW | 500 mW | 500 mW | 500 mW | 1400 mW | 1300 mW |
| Automotive Grade (AEC-Q101) | Yes | No | Yes | No | Yes (AEC-Q101) | No |
| Unit Price @ 1000 pcs (approx.) | $0.14 | $0.12 | $0.13 | $0.18 | $0.16 | $0.13 |
주요 차별점
- Automotive AEC-Q101 qualification in a standard SOT-23-3 footprint (vs BSS308PEH6327 (same family, standard pack))
- Higher continuous drain current at the same RDS(on) cost point (vs FDN360P (onsemi cross-brand equivalent))
- Lower RDS(on) at the same current rating for cooler operation (vs DMP3098L-7 (Diodes Incorporated equivalent))
설계 노트
The SOT-23-3 footprint relies on its three gull-wing leads and the bottom thermal pad (drain) for both electrical connection and heat dissipation. Estimated: at -2 A continuous drain current with 80 mΩ RDS(on), conduction loss is approximately 320 mW, which is within the 500 mW PD rating but approaches the limit on a 1 oz FR4 board. Use at least 50 mm² of copper on the drain pad and on the source pad to keep junction temperature rise below 30 °C above ambient. For higher steady-state currents, consider the AO3401A or DMP3098L-7 which offer 1400 mW PD ratings in the same footprint.
Always place a 10 kΩ to 100 kΩ gate-to-source pulldown resistor on the BSS308PEH6327XTSA1 to ensure the MOSFET stays off when the gate driver is in high-impedance. Without this resistor, the gate can float during controller startup or reset, and the dv/dt of the source node can charge Cgd via the Miller effect, briefly turning on the FET and causing inrush current into the load. Place the pulldown resistor physically close to the gate pin (within 3 mm) to minimize parasitic trace inductance. If fast switching is required, add a small series gate resistor (10-100 Ω) to damp ringing.
Do not exceed the +/-20 V VGS absolute maximum rating of the BSS308PEH6327XTSA1. In a 12 V automotive system where the source can sit at 12 V, driving the gate directly from a 5 V GPIO would create a VGS of -7 V (safe), but driving from a 24 V industrial rail with the gate grounded would create a VGS of -24 V (destructive). Use a Zener clamp or gate-source resistor divider to limit VGS to +/-20 V. Also verify the SOA curve at your operating point - at VDS near -30 V and pulsed currents above -2 A, thermal limits can be exceeded in under 100 ms.
규정 준수 정보
AEC-Q101 automotive-grade qualification (per Arrow product listing). RoHS and REACH compliant per Abacus Technologies product record. Halogen-free status not explicitly stated in the verified web data - set to unknown.
