IDM08G120C5XTMA1 - 1200V 8A SiC Schottky Diode | Infineon CoolSiC G5
MPN: IDM08G120C5XTMA1 β Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $3.85 | $3.85 |
| 10 | $3.45 | $34.50 |
| 100 | $2.92 | $292.00 |
| 500 | $2.55 | $1,275.00 |
| 1,000 | $2.21 | $2,210.00 |
Drop-in alternatives for IDM08G120C5XTMA1 β same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool β Select alternative parts for side-by-side comparison:
IDM08G120C5
β Drop-Inπ Reference alternative (not in catalog)
IDM08G120C5XTMA2
β Drop-Inπ Reference alternative (not in catalog)
STPSC8H12
β Drop-Inπ Reference alternative (not in catalog)
NDSH08120A
β Drop-Inπ Reference alternative (not in catalog)
C4D08120E
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LTT8S12S5
β Drop-Inπ Reference alternative (not in catalog)
IDM08G120C5XTMA1 Maximum Ratings & Electrical Characteristics
| Manufacturer | Infineon Technologies |
| Product Family | CoolSiC Schottky Diode Generation 5 |
| Diode Type | Silicon Carbide (SiC) Schottky Barrier Diode |
| Repetitive Peak Reverse Voltage (VRRM) | 1200 V |
| Average Forward Current (IF(AV)) | 8 A (TC = 150 Β°C) |
| Forward Voltage (VF) typ. | 1.5 V at 8 A, 25 Β°C |
| Reverse Recovery Charge (Qrr) | 0 nC (zero reverse recovery - SiC) |
| Junction Temperature Range (TJ) | -55 Β°C to +175 Β°C |
| Package | PG-TO252-2 (DPAK real-2-pin) |
| Mounting Type | Surface Mount |
| Configuration | Single Diode |
| RoHS Status | Compliant |
| Lead-Free | Yes |
IDM08G120C5XTMA1 Pin Configuration
| Pin 1 | A β Anode (through-board lead) |
| Pin 2 | K β Cathode (through-board lead, internally connected to tab) |
| Pin TAB | K β Cathode (exposed metal tab, primary thermal path) |
Safe Operating Area (SOA) & Thermal Characteristics
No official SOA curve available for this component. Always operate within absolute maximum ratings specified in the datasheet. Ensure adequate cooling and derate as needed.
Typical Applications
IDM08G120C5XTMA1 is suitable for 6 applications: Solar String Inverter Boost PFC, On-Board EV Battery Charger (OBC), Totem-Pole Bridgeless PFC, Industrial Motor Drive Rectifier, Telecom SMPS Output Rectifier, Uninterruptible Power Supply (UPS).
Solar String Inverter Boost PFC
The IDM08G120C5XTMA1 is well suited as the boost-diode in a 10 kW to 25 kW three-phase solar string inverter operating at 50 kHz to 100 kHz PFC. Its 1200 V VRRM comfortably exceeds the 1000 V DC-link voltage of an 800 V PV-string architecture, while its zero reverse-recovery charge eliminates the reverse-recovery losses that silicon ultrafast rectifiers incur at every switching cycle. Placed between the boost inductor and the DC-link capacitor, the diode reduces total PFC-stage losses by 30 to 50 percent compared with a 1200 V silicon rectifier, raising system efficiency above 99 percent and reducing heatsink mass.
Recommended
On-Board EV Battery Charger (OBC)
In an 11 kW to 22 kW on-board EV charger, the IDM08G120C5XTMA1 serves as the freewheeling rectifier on the secondary side of an LLC resonant converter fed from an 800 V bus. Its 175 Β°C maximum junction temperature provides ample thermal margin above the typical 130 Β°C operation point in liquid-cooled OBC enclosures, and its surface-mount PG-TO252-2 footprint allows automated assembly. The 1.5 V forward drop at 8 A keeps conduction losses below 12 W per diode, eliminating the need for forced-air cooling at the rectifier stage.
Recommended
Totem-Pole Bridgeless PFC
The IDM08G120C5XTMA1 functions in the slow-rectifier leg of a continuous-conduction-mode totem-pole bridgeless PFC fed from a 400 V to 800 V DC-link. SiC Schottky diodes are mandatory in this topology because silicon rectifiers would suffer severe reverse-recovery cross-conduction losses during the AC-line zero-crossing. The Infineon CoolSiC G5 merged-pn junction provides both low forward drop during conduction and high surge-current handling during start-up, ensuring reliable operation over the full -40 Β°C to +125 Β°C automotive temperature range.
Recommended
Industrial Motor Drive Rectifier
In a 10 kW to 50 kW industrial variable-frequency drive (VFD) the IDM08G120C5XTMA1 is used as the output freewheeling diode across the IGBT half-bridge to clamp inductive kickback during switching transients. Its 1200 V rating matches the typical 600 V to 750 V DC-bus of a three-phase 400 V AC or 480 V AC drive, and its zero reverse-recovery ensures clean, lossless transitions. The DPAK real-2-pin package provides the rugged mechanical mounting required for industrial environments with high vibration and thermal cycling.
Recommended
Telecom SMPS Output Rectifier
In a -48 V telecom rectifier module or a 380 V DC data-center supply, the IDM08G120C5XTMA1 serves as the secondary-side synchronous-rectifier emulating diode in an LLC or phase-shifted full-bridge topology. Its 1200 V rating provides headroom for 400 V to 800 V bus operation while its zero reverse-recovery simplifies dead-time control in the secondary rectifiers. At 100 kHz switching frequency, the SiC diode reduces rectifier-stage losses by up to 60 percent compared with a silicon ultrafast rectifier of equal rating.
Recommended
Uninterruptible Power Supply (UPS)
In a 5 kW to 20 kW double-conversion online UPS the IDM08G120C5XTMA1 is used in the inverter-stage freewheeling positions and in the battery-mode boost converter. Its 1200 V rating handles the 800 V DC-link and its high 175 Β°C junction-temperature rating ensures reliable operation when the UPS is operating at full rated load in an ambient of 40 Β°C to 50 Β°C inside a server-room enclosure. The DPAK footprint allows compact, high-density PCB layouts that maximize power density per cubic inch.
Recommended
Recommended Products Summary
Engineering reference data for IDM08G120C5XTMA1 β comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IDM08G120C5 | IDM08G120C5XTMA2 | STPSC8H12 | NDSH08120A |
|---|---|---|---|---|---|
| Package | PG-TO252-2 (DPAK real-2-pin) | PG-TO252-2 (DPAK real-2-pin) - same | PG-TO252-2 (DPAK real-2-pin) - same | PG-TO252-2 (DPAK real-2-pin) - same | PG-TO252-2 (DPAK real-2-pin) - same |
| Brand | Infineon | Infineon | Infineon | STMicroelectronics | onsemi |
| Repetitive Peak Reverse Voltage (VRRM) | 1200 V | 1200 V | 1200 V | 1200 V | 1200 V |
| Average Forward Current (IF(AV)) | 8 A | 8 A | 8 A | 8 A | 8 A |
| Forward Voltage VF (typ. at 8 A, 25 Β°C) | 1.5 V | 1.5 V | 1.5 V | 1.5 V | 1.45 V |
| Reverse Recovery Charge (Qrr) | 0 nC (SiC) | 0 nC | 0 nC | 0 nC | 0 nC |
| Maximum Junction Temperature | 175 Β°C | 175 Β°C | 175 Β°C | 175 Β°C | 175 Β°C |
| Pinout Variant | Real-2-pin (DPAK) | Real-2-pin | Real-2-pin | Real-2-pin | Real-2-pin |
| Approx. Unit Price (qty 100, as of 2026-09-14) | USD 2.92 | USD 2.85 (slightly lower, bulk pack) | USD 2.92 (same) | USD 2.75 (cross-brand savings) | USD 2.80 (cross-brand savings) |
Key Differentiators
- CoolSiC Generation 5 merged-pn junction improves surge-current capability without sacrificing reverse-recovery performance (vs STPSC8H12 (STMicroelectronics))
- Real-2-pin DPAK footprint maximizes creepage distance for 1200 V systems (vs C4D08120E (Wolfspeed, three-lead TO-252))
- Tape-and-reel packaging suffix (-TMA1) supports high-volume SMT assembly without re-tooling (vs IDM08G120C5 (tray pack))
Design Notes
Estimated: at 8 A continuous forward current and a typical forward voltage of 1.5 V (Tj = 25 Β°C), each IDM08G120C5XTMA1 dissipates roughly 12 W of conduction loss. Designers must provide a copper-pour area of at least 200 mmΒ² on the cathode tab and a 4 x 4 array of 0.3 mm thermal vias under the exposed pad to keep the junction-to-ambient thermal resistance below 35 K/W. Without this thermal design the junction temperature can quickly exceed the 175 Β°C absolute maximum rating at full load, accelerating device degradation and compromising system reliability.
Use the recommended PG-TO252-2 (DPAK) land pattern from the Infineon application note with a minimum pad-to-pad clearance of 1.5 mm to preserve the 1200 V creepage and clearance required by IEC 60664-1 for pollution degree 2 environments. Route the anode and cathode traces on opposite sides of the package to minimize parasitic inductance that can cause ringing during reverse recovery. Add a snubber RC network (10 Ξ© + 1 nF) across the diode if the PCB layout cannot limit the stray inductance below 5 nH.
Do not substitute a conventional silicon 1200 V ultrafast rectifier such as the MUR-series in a SiC-targeted design: the silicon part will introduce reverse-recovery losses of 50 nC to 100 nC that defeat the efficiency goal of a SiC front-end. Also avoid running the diode above 90 percent of its IFSM rating during inrush events, as the merged-pn junction, while more robust than a pure Schottky, can still suffer thermal runaway if junction temperature exceeds 200 Β°C even briefly.
SiC Schottky diodes have very fast switching edges (dV/dt up to 50 kV/Β΅s) which can excite parasitic resonances in the power loop. Use a Kelvin-source connection to the gate driver when paired with a SiC MOSFET, and keep the power-loop inductance below 10 nH by minimizing the loop area between the diode, the active switch and the DC-link capacitor. A 0.1 Β΅F to 1 Β΅F X7R ceramic decoupling capacitor placed within 5 mm of the diode's cathode tab further reduces high-frequency ringing and conducted EMI on the DC bus.
Compliance Information
RoHS and REACH compliance per Infineon product page. Halogen-free per Infineon Green Product designation. Not AEC-Q100 qualified at the part level; the IDM08G120C5 may be screened for automotive reliability by the customer if required for EV applications.
