IPP60R099C7 - 600V 99mΩ CoolMOS C7 MOSFET | Infineon
MPN: IPP60R099C7 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $2.85 | $2.85 |
| 10 | $2.56 | $25.60 |
| 100 | $2.28 | $228.00 |
| 500 | $2.05 | $1,025.00 |
| 1,000 | $1.85 | $1,850.00 |
Drop-in alternatives for IPP60R099C7 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
IPP60R099CP
✅ Drop-In📋 Reference alternative (not in catalog)
IPP60R099P7
✅ Drop-In📋 Reference alternative (not in catalog)
IPP60R099C6
✅ Drop-In📋 Reference alternative (not in catalog)
STP22N60M2
✅ Drop-In📋 Reference alternative (not in catalog)
FCP22N60N
✅ Drop-In📋 Reference alternative (not in catalog)
TK22N60X
✅ Drop-In📋 Reference alternative (not in catalog)
IPP60R099C7 Maximum Ratings & Electrical Characteristics
| Drain-Source Voltage (VDS) | 600 V |
| Continuous Drain Current (ID) at 25°C | 22 A |
| RDS(on) Max at VGS=10V | 99 mΩ |
| Gate-Source Voltage (VGS) | ±20 V |
| Gate Threshold Voltage (VGS(th)) | 3.5 V (typical) |
| Input Capacitance (Ciss) | 1.819 nF |
| Avalanche Energy (EAS) | 97 mJ |
| Operating Junction Temperature | -55°C to +150°C |
| Package | TO-220 (PG-TO220-3) |
| Mounting Type | Through Hole |
| Technology | CoolMOS™ C7 Superjunction |
| Polarity | N-Channel |
| Configuration | Single with built-in diode |
| RoHS | Compliant |
| MSL Level | 1 (unlimited) |
IPP60R099C7 Pin Configuration
| Pin 1 | Gate — Gate terminal for controlling the MOSFET |
| Pin 2 | Drain — Drain terminal, connected to the heatsink tab |
| Pin 3 | Source — Source terminal |
Safe Operating Area (DC)
Typical Applications
IPP60R099C7 is suitable for 6 applications: Power Factor Correction (PFC), LLC Resonant Converters, Switched-Mode Power Supplies (SMPS), Solar Inverters, Electric Vehicle Charging Stations, Industrial Power Supplies.
Power Factor Correction (PFC)
The IPP60R099C7 is ideal for PFC stages in switch-mode power supplies. Its low RDS(on) of 99 mΩ minimizes conduction losses, while the CoolMOS C7 technology reduces turn-off losses (Eoss) by ~50% compared to CP series, improving efficiency in continuous conduction mode (CCM) PFC. The 600V rating provides ample margin for 380V DC bus voltages. In a typical boost PFC circuit, the MOSFET switches at 65-100 kHz, and the low gate charge enables fast switching, reducing driver losses. The device's avalanche robustness (EAS 97 mJ) ensures reliability during transient overvoltage conditions.
Recommended
LLC Resonant Converters
In LLC resonant converters, the IPP60R099C7 excels due to its low output capacitance (Coss) and fast body diode, which reduce switching losses and improve efficiency. The device's 600V rating is suitable for 400V DC links, and its low RDS(on) minimizes conduction losses. The CoolMOS C7 series is specifically optimized for resonant topologies, offering a ~50% reduction in turn-off losses compared to CP. This makes it ideal for high-frequency operation (100-300 kHz) in server and telecom power supplies. The integrated fast body diode eliminates the need for an external diode in many designs, simplifying the circuit.
Recommended
Switched-Mode Power Supplies (SMPS)
The IPP60R099C7 is well-suited for SMPS applications, including flyback and forward converters. Its low RDS(on) and low gate charge enable high efficiency at switching frequencies up to 200 kHz. The 600V rating provides headroom for universal input (85-265V AC) applications. The device's low thermal resistance in TO-220 package allows for efficient heat dissipation with a heatsink. In a typical 300W SMPS, the IPP60R099C7 can handle the primary-side switching with minimal losses, improving overall power density. Its avalanche rating ensures robustness during load transients.
Recommended
Solar Inverters
In solar inverters, the IPP60R099C7 is used in DC-DC boost converters and inverter stages. Its 600V rating is suitable for 400V DC bus voltages in residential and commercial solar systems. The low RDS(on) reduces conduction losses, improving overall system efficiency. The CoolMOS C7 technology's low switching losses enable high-frequency operation, reducing the size of magnetic components. The device's robustness in harsh environments, with an operating temperature range of -55°C to +150°C, ensures reliable operation in outdoor installations. The avalanche rating provides protection against inductive spikes.
Recommended
Electric Vehicle Charging Stations
The IPP60R099C7 is suitable for EV charging stations, where high efficiency and reliability are critical. It can be used in PFC and DC-DC converter stages to convert AC mains to the required DC voltage for battery charging. The 600V rating and 22A current capability make it suitable for chargers up to 7kW. The low RDS(on) minimizes losses, and the CoolMOS C7 technology ensures high efficiency at high switching frequencies, reducing the size of the charging unit. The device's wide temperature range and avalanche robustness ensure reliable operation in demanding environments.
Recommended
Industrial Power Supplies
In industrial power supplies, the IPP60R099C7 is used in PFC and DC-DC stages to provide stable power for machinery and automation. Its 600V rating is suitable for three-phase industrial inputs (up to 480V AC). The low RDS(on) and low switching losses enable high efficiency, reducing operating costs. The device's TO-220 package allows for easy mounting on heatsinks, and its wide temperature range ensures reliable operation in factory environments. The avalanche rating provides robustness against voltage spikes from inductive loads.
Recommended
Recommended Products Summary
Engineering reference data for IPP60R099C7 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IPP60R099CP | IPP60R099P7 | STP22N60M2 | FCP22N60N |
|---|---|---|---|---|---|
| Package | TO-220 (PG-TO220-3) | TO-220 (PG-TO220-3) | TO-220 (PG-TO220-3) | TO-220 | TO-220 |
| Brand | Infineon | Infineon | Infineon | STMicroelectronics | onsemi |
| VDS (V) | 600 | 600 | 600 | 600 | 600 |
| ID (A) | 22 | 22 | 22 | 22 | 22 |
| RDS(on) (mΩ) | 99 | 99 | 99 | 190 | 190 |
| Technology | CoolMOS C7 | CoolMOS CP | CoolMOS P7 | MDmesh M2 | SuperFET II |
| Eoss Reduction | ~50% vs CP | Baseline | Similar to C7 | [DATA_NEEDED] | [DATA_NEEDED] |
| Avalanche Energy (mJ) | 97 | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] |
Key Differentiators
- Lowest RDS(on) in class (vs STP22N60M2)
- Reduced turn-off losses (Eoss) (vs IPP60R099CP)
- Fast body diode (vs FCP22N60N)
Design Notes
The IPP60R099C7 in TO-220 package requires adequate heatsinking for high-power applications. At 22A and RDS(on) of 99mΩ, conduction losses are approximately 48W. With a junction-to-case thermal resistance of about 0.6°C/W, a heatsink with thermal resistance below 2°C/W is recommended to keep junction temperature below 125°C at 25°C ambient. Use thermal compound and ensure proper mounting torque.
For optimal performance, keep the gate drive loop short and use a gate resistor (5-10Ω) to reduce ringing. Place a 100nF ceramic capacitor close to the gate driver to supply peak gate current. The drain and source traces should be wide and short to minimize parasitic inductance. For TO-220, the tab is connected to the drain; ensure proper isolation if using a shared heatsink.
Avoid operating the device beyond the maximum VDS of 600V, as this can cause avalanche breakdown and damage. Ensure the gate-source voltage does not exceed ±20V. In high-frequency switching, parasitic turn-on can occur due to Miller effect; use a negative gate drive or a gate clamp to prevent this. Also, consider the body diode reverse recovery in bridge topologies; the CoolMOS C7 has a fast body diode, but external snubbers may still be needed.
Compliance Information
RoHS compliance confirmed in datasheet. Other compliance data not specified in provided sources.
