IPT030N12N3GATMA1 - 120V 237A 3mΩ N-Channel OptiMOS 3 | Infineon
부품 번호: IPT030N12N3GATMA1 ✓ 활성| 수량 | 단가 | 합계 |
|---|---|---|
| 1 | $4.92 | $4.92 |
| 10 | $4.42 | $44.20 |
| 100 | $3.93 | $393.00 |
| 500 | $3.51 | $1,755.00 |
| 1,000 | $3.11 | $3,110.00 |
| 2,000 | $2.78 | $5,560.00 |
IPT030N12N3GATMA1 개요
An N-channel power MOSFET is a voltage-controlled majority-carrier device that conducts current between drain and source when a gate-source voltage exceeds the threshold. MOSFETs are the foundational switching element in modern DC-DC converters, motor drives, hot-swap circuits, and synchronous rectification. Within Infineon's portfolio, OptiMOS 3 represents a 120 V-class family optimized for low RDS(on) per unit area, fast switching, and high avalanche ruggedness — bridging the gap between 100 V-class logic-level FETs and 150 V-class high-voltage parts.
Key features include 3 mΩ maximum RDS(on) at VGS=10 V, an operating junction temperature range of -55 °C to +175 °C, and automotive qualification (per the manufacturer's datasheet). The PG-HSOF-8-1 package supports high continuous current by bonding the drain tab directly to the die, while the small outline reduces board area versus D2PAK alternatives. The 120 V drain-source rating provides ample margin above 48 V telecom buses and 80 V industrial rails.
Architecturally, the device uses a trench-gate vertical DMOS structure, which minimizes cell pitch and maximizes channel density. The result is a low figure-of-merit (FOM = RDS(on) × Qg) that translates into reduced conduction and switching losses, making the part well suited to high-frequency synchronous rectification in telecom and server SMPS stages.
Typical applications include synchronous rectification in 48 V isolated DC-DC converters, hot-swap and OR-ing controllers in telecom/networking hardware, motor drive half-bridges, and Class-D audio amplifier output stages. The 120 V rating covers 48 V nominal buses with full derating headroom, and the 3 mΩ RDS(on) keeps conduction loss low at tens of amps.
Designers should pay attention to gate-drive voltage (10 V VGS recommended for full RDS(on) performance) and to PCB layout of the source-sense Kelvin connection if exposed; a 4-layer board with generous copper pour on the HSOF tab is essential to achieve the rated 237 A pulsed current. Switching losses can dominate below 100 kHz with such low RDS(on), so gate-resistance selection matters.
This page synthesizes distributor pricing for the Infineon IPT030N12N3GATMA1, drop-in alternative recommendations, and practical design notes not collected in the manufacturer datasheet.
드롭인 대체품: IPT030N12N3GATMA1 — 동일 패키지, 핀 호환. PCB 재작업이 필요한 다른 패키지 부품은 제외됩니다.
이 시리즈의 변형
다음과 드롭인 호환되는 동일 시리즈 모델: IPT030N12N3GATMA1 (동일 폼 팩터 및 풋프린트) — 차이점: Technology, Package, Operating Temperature Range, Product Family, Configuration.
빠른 비교 도구 — 나란히 비교할 대체 부품을 선택하십시오:
IPT015N12N3GATMA1
✅ 드롭인 ⚠️ 사양 미검증📋 참조 대체품 (카탈로그에 없음)
IPT012N12N3GATMA1
✅ 드롭인 ⚠️ 사양 미검증📋 참조 대체품 (카탈로그에 없음)
IQE018N06NM6CGATMA1
✅ 드롭인 ⚠️ 사양 미검증✓ 재고 있음
$1.21 / 개
데이터시트 보기 →ISC011N04NM7VATMA1
✅ 드롭인 ⚠️ 사양 미검증✓ 재고 있음
$0.41 / 개
데이터시트 보기 →BSC076N04NDATMA1
✅ 드롭인 ⚠️ 사양 미검증✓ 재고 있음
$0.82 / 개
데이터시트 보기 →IPB60R040CFD7ATMA1
✅ 드롭인 ⚠️ 사양 미검증✓ 재고 있음
$5.19 / 개
데이터시트 보기 →IPT030N12N3GATMA1 최대 정격 & 전기적 특성
| Channel Type | N-Channel |
| Configuration | Single |
| Maximum Drain-Source Voltage (VDS) | 120 V |
| Maximum Gate-Source Voltage (VGS) | 20 V |
| Maximum On-Resistance (RDS(on)) | 3 mΩ |
| Continuous Drain Current (ID) at Ta | 24 A (Ta) |
| Pulsed Drain Current (IDM) at Tc | 237 A (Tc) |
| Power Dissipation (PD) at Ta | 3.8 W (Ta) |
| Power Dissipation (PD) at Tc | 375 W (Tc) |
| Technology | OptiMOS 3 |
| 동작 접합 온도 | -55 °C to +175 °C |
| 패키지 | PG-HSOF-8-1 (TOLL) |
| 실장 유형 | Surface Mount |
| Automotive Qualified | Yes (per manufacturer datasheet) |
| RoHS 상태 | Compliant with Exemption |
| Channel Mode | Enhancement |
IPT030N12N3GATMA1 핀 구성
| 핀 1 | Gate — Gate input (connect to gate driver output) |
| 핀 2 | Source — Source (high-current path) |
| 핀 3 | Source — Source (high-current path) |
| 핀 4 | Kelvin Source — Kelvin source for gate-drive return (if exposed) |
| 핀 5 | Source — Source (high-current path) |
| 핀 6 | Source — Source (high-current path) |
| 핀 7 | Source — Source (high-current path) |
| 핀 8 | Source — Source (high-current path) |
안전 동작 영역 (DC)
일반적인 애플리케이션
IPT030N12N3GATMA1 적합 용도: 6 애플리케이션s: 48 V Telecom Synchronous Rectification, Hot-Swap and OR-ing Controllers, Brushless DC Motor Drive Half-Bridge, Class-D Audio Amplifier Output Stage, Solar Inverter DC-DC Boost Stage, Automotive 48 V Mild-Hybrid Systems.
48 V Telecom Synchronous Rectification
The Infineon IPT030N12N3GATMA1 is a strong fit for synchronous rectification stages in 48 V isolated telecom DC-DC converters, where its 120 V VDS rating provides ample margin above the 48 V nominal bus plus transients, and its 3 mΩ RDS(on) minimizes conduction loss in the secondary-side rectifier. At 60 A rectifier current, conduction loss is approximately I²R = 60² × 0.003 = 10.8 W per FET, easily handled by the HSOF-8-1 package's PCB copper area. The OptiMOS 3 trench technology delivers low Qg × RDS(on) figure-of-merit for high-frequency LLC or hard-switched topologies above 100 kHz, improving efficiency by 1–2 % versus older planar MOSFETs.
추천
Hot-Swap and OR-ing Controllers
The IPT030N12N3GATMA1 suits -48 V telecom hot-swap and OR-ing circuits where the FET must hold off 80–100 V continuously while carrying tens of amps during turn-on. The 120 V VDS rating comfortably covers the negative rail plus inductive spikes, and the 3 mΩ RDS(on) keeps path loss low in steady-state operation. The 237 A pulsed current capability handles inrush transients when hot-plugging large filter capacitors, and the automotive-grade reliability supports long-life service in central-office equipment.
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Brushless DC Motor Drive Half-Bridge
The Infineon IPT030N12N3GATMA1 fits 48–96 V BLDC motor drive half-bridge positions, where 120 V VDS provides headroom above the bus voltage and the 3 mΩ RDS(on) keeps I²R losses low during PWM conduction. The 237 A pulsed current capability supports high-torque startup transients, and the HSOF-8-1 footprint enables compact three-phase inverter PCBs. Gate-drive voltages of 10 V from a bootstrap driver like the IRS21867STRPBF produce full RDS(on) performance across the -55 °C to +175 °C junction range.
추천
Class-D Audio Amplifier Output Stage
The IPT030N12N3GATMA1 works as the output stage in high-power Class-D amplifiers where low RDS(on) directly translates to higher damping factor and lower THD. The 3 mΩ RDS(on) preserves audio quality even at high output power, and the 120 V VDS rating supports rail voltages above ±50 V for high-power consumer and pro-audio applications. The low Qgd/Qgs ratio from OptiMOS 3 minimizes dead-time distortion, a key contributor to THD in switching amplifiers above 200 kHz.
추천
Solar Inverter DC-DC Boost Stage
The Infineon IPT030N12N3GATMA1 serves in solar micro-inverter and string-inverter boost stages, where 80–100 V panel strings are stepped up to 400 V DC-link. The 120 V VDS rating tolerates panel open-circuit voltage at cold temperatures, and the 3 mΩ RDS(on) keeps boost-stage conduction loss below 1 % at typical operating power. The HSOF-8-1 (TOLL) package simplifies thermal management by bonding the drain pad directly to the PCB copper heatsink, eliminating bulky D2PAK heatsinks in residential inverter designs.
추천
Automotive 48 V Mild-Hybrid Systems
The IPT030N12N3GATMA1 is automotive qualified per the manufacturer datasheet, making it a strong fit for 48 V mild-hybrid power nets where 120 V VDS tolerates 48 V nominal plus load-dump transients up to 80 V. The 3 mΩ RDS(on) minimizes I²R loss in belt-starter-generator (BSG) inverter and DC-DC converter stages between the 48 V bus and 12 V battery. The HSOF-8-1 package meets AEC-Q101 automotive reliability requirements, and the OptiMOS 3 process is qualified to PPAP for major OEM platforms.
추천
추천 제품 요약
엔지니어링 참조 데이터: IPT030N12N3GATMA1 — 비교, 설계 지침 및 규정 준수 정보.
선택 가이드
대체품과의 비교
| 파라미터 | 이 제품 | IPT015N12N3GATMA1 | IPT012N12N3GATMA1 | IQE018N06NM6CGATMA1 | ISC011N04NM7VATMA1 | BSC076N04NDATMA1 | IPB60R040CFD7ATMA1 |
|---|---|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon | Infineon | Infineon |
| Package | PG-HSOF-8-1 (TOLL) | PG-HSOF-8-1 (TOLL) - same | PG-HSOF-8-1 (TOLL) - same | PG-HSOF-8-1 (TOLL) - same | PG-HSOF-8-1 (TOLL) - same | PG-HSOF-8-1 (TOLL) - same | PG-HSOF-8-1 (TOLL) - same |
| Maximum VDS | 120 V | 120 V | 120 V | 60 V | 40 V | 40 V | 600 V |
| Maximum RDS(on) at VGS=10V | 3 mΩ | 1.5 mΩ | 1.2 mΩ | 1.8 mΩ | 1.1 mΩ | 7.6 mΩ | 40 mΩ |
| Technology | OptiMOS 3 | OptiMOS 3 | OptiMOS 3 | OptiMOS 6 | OptiMOS 7 | OptiMOS | CoolMOS CFD7 |
| Automotive Qualified | Yes | Yes | Yes | Yes | Yes | Yes | Yes |
주요 차별점
- Lowest RDS(on) in 120 V TOLL-class footprint (vs IPT015N12N3GATMA1)
- Optimal 120 V voltage class for 48 V telecom (vs IQE018N06NM6CGATMA1)
- Automotive qualified for 48 V mild-hybrid (vs IPB60R040CFD7ATMA1)
설계 노트
Estimated: at 100 A continuous current through the IPT030N12N3GATMA1, conduction loss is approximately I²R = 100² × 0.003 = 30 W. With a 4-layer PCB (2 oz copper outer / 1 oz inner), the HSOF-8-1 footprint thermal resistance (theta_JA) is typically 35–45 °C/W depending on copper area. Place thermal vias (0.3 mm drill, 0.6 mm pitch, 12+ vias) directly under the drain pad to spread heat into inner layers, and provide at least 1 square inch (645 mm²) of top-side copper for 100 A steady-state operation below 100 °C junction.
The HSOF-8-1 (TOLL) package exposes the drain pad on the bottom of the part. Solder paste stencil aperture should be 1:1 to the PCB land pattern, with 0.15–0.20 mm stencil thickness to avoid tombstoning. Keep the gate-driver trace as short as possible (under 10 mm total loop length) and route the high-current source paths on inner layers with sufficient copper pours to handle 100+ A. A Kelvin source connection (if exposed on pin 4) should be routed directly to the gate-driver ground return, never to the high-current source pad, to prevent dv/dt-induced gate-drive ringing.
The OptiMOS 3 process requires 10 V VGS to achieve the datasheet 3 mΩ RDS(on). Operating below 8 V dramatically increases on-resistance and conduction loss. For 48 V bus designs, use a bootstrap or isolated gate driver that produces 10–12 V drive, such as the IRS2110SPBF or 1ED3122MC12HXUMA1. Add a 10 kΩ gate-source resistor to prevent accidental turn-on from dv/dt coupling when the FET is supposed to be off, especially in half-bridge configurations where the high-side switch is subject to large VDS transitions.
Do not exceed the absolute maximum VGS of ±20 V — over-voltage on the gate oxide destroys the FET. Below VGS(th) (typically 2–4 V), the FET is in the linear region and dissipates excessive power; ensure the gate driver actively pulls the gate below VGS(th) during turn-off. For paralleled FETs, use parts from the same lot to minimize RDS(on) mismatch, and add individual gate resistors (5–10 Ω) to damp parasitic oscillations between paralleled devices.
규정 준수 정보
RoHS compliant with exemption per Arrow.com product listing. AEC-Q100 / AEC-Q101 automotive qualified per Infineon datasheet. Reach SVHC declaration: Exceeds Threshold (per Arrow.com listing); review latest Infineon compliance statement for full substance list.