IRF1010NPBF-VB - 55V 85A N-Channel Power MOSFET | VBsemi
부품 번호: IRF1010NPBF-VB ✓ 활성| 수량 | 단가 | 합계 |
|---|---|---|
| 1 | $0.38 | $0.38 |
| 10 | $0.35 | $3.50 |
| 100 | $0.3 | $30.00 |
| 500 | $0.27 | $135.00 |
| 1,000 | $0.25 | $250.00 |
IRF1010NPBF-VB 개요
A power MOSFET is a voltage-controlled semiconductor switch used at the top of the power-device hierarchy (MOSFET -> power transistor -> power management -> semiconductor). Unlike bipolar junction transistors, MOSFETs are driven by gate voltage rather than base current, giving very high input impedance, fast switching and low drive power. The IRF1010 family belongs to the industry-standard IRF TO-220 through-hole series, which remains one of the most widely second-sourced power MOSFET footprints in the industry.
Key features include a 55 V VDSS breakdown rating for 12 V and 24 V bus systems, an on-resistance of approximately 14 mOhm that minimizes conduction losses at high current, a total gate charge of about 80 nC, and the Pb-free RoHS-compliant suffix (PBF) construction. The planar cell structure gives a wide safe operating area, and the device is optimized for switching frequencies below 100 kHz.
Technically, the device uses an enhancement-mode N-channel vertical structure with a source-body short that eliminates the parasitic bipolar action, making it rugged against dV/dt events. Gate-source voltage is limited to plus/minus 20 V. The through-hole TO-220AB package offers easy mounting on a heatsink, supporting the full 180 W dissipation rating at case temperatures controlled to 25 C.
Typical applications include DC motor drives, high-current switching power supplies, UPS inverters, battery-management switching stages, and automotive-adjacent industrial controllers where a robust, repairable through-hole power switch is preferred.
When designing, mount the TO-220AB tab to a properly sized heatsink; at 85 A the conduction loss alone is roughly 100 W (I2 x R = 85^2 x 0.014 Ohm), so real designs must derate or parallel devices. Drive the gate with at least 10 V to fully enhance the channel and minimize RDS(on).
This page synthesizes distributor pricing, drop-in cross-references, and practical design notes not found in the manufacturer datasheet, with verified data as of 2026-10-20.
드롭인 대체품: IRF1010NPBF-VB — 동일 패키지, 핀 호환. PCB 재작업이 필요한 다른 패키지 부품은 제외됩니다.
이 시리즈의 변형
다음과 드롭인 호환되는 동일 시리즈 모델: IRF1010NPBF-VB (동일 폼 팩터 및 풋프린트) — 차이점: Package, Technology, RoHS Status, Drain-Source Voltage (VDS), Configuration.
빠른 비교 도구 — 나란히 비교할 대체 부품을 선택하십시오:
IRF1010NPBF
✅ 드롭인✓ 재고 있음
$1.32 / 개
데이터시트 보기 →IRF1010EPBF
✅ 드롭인✓ 재고 있음
$0.45 / 개
데이터시트 보기 →IRF1407PBF
✅ 드롭인✓ 재고 있음
$0.86 / 개
데이터시트 보기 →IRF3205PBF
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
IRF3808PBF
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
IRFB4110PBF
✅ 드롭인✓ 재고 있음
$1.55 / 개
데이터시트 보기 →IRF1010NPBF-VB 최대 정격 & 전기적 특성
| Transistor Polarity | N-Channel |
| Drain-Source Voltage VDSS | 55 V |
| Continuous Drain Current ID | 85 A (Tc) |
| Power Dissipation PD | 180 W (Tc) |
| On-Resistance RDS(on) | 0.014 Ohm (14 mOhm) |
| Total Gate Charge Qg | 80 nC |
| Gate-Source Voltage VGSS | +/-20 V |
| Operating Mode | Enhancement |
| Number of Channels | 1 |
| 패키지 | TO-220AB (Through Hole) |
| 실장 유형 | Through Hole |
| Configuration | Single FET |
| Process Technology | Planar HEXFET, Advanced Process Technology |
| Recommended Switching Frequency | Below 100 kHz |
| Market Qualification | Industrial |
| RoHS 상태 | Compliant (Pb-free suffix) |
IRF1010NPBF-VB 핀 구성
| 핀 1 | Gate — Gate control terminal; drive with 10 V for full enhancement |
| 핀 2 | Drain — Drain terminal, connected internally to the metal mounting tab |
| 핀 3 | Source — Source terminal, reference for gate drive and current return |
안전 동작 영역 (DC)
일반적인 애플리케이션
IRF1010NPBF-VB 적합 용도: 6 애플리케이션s: DC Motor Control, Switch-Mode Power Supplies, UPS and Inverter Stages, Battery Management and Protection, Automotive-Adjacent Industrial Controllers, Repair and Maintenance of Legacy Power Boards.
DC Motor Control
The IRF1010NPBF-VB fits low-voltage DC motor drives because its 55 V rating covers 12 V, 24 V and 48 V buses with avalanche margin for inductive kickback, while 14 mOhm RDS(on) keeps conduction loss manageable - Estimated: at 30 A, loss is about 12.6 W. Used as the PWM switching element between the supply and the motor armature, it is driven with 10 V gate amplitude to fully enhance the channel. The planar cell structure provides a wide safe operating area for hard-switched loads, and the datasheet positions the device for switching below 100 kHz, which matches typical motor PWM frequencies of 1-20 kHz. The through-hole TO-220AB makes heatsinking and field replacement straightforward in serviceable equipment.
추천
Switch-Mode Power Supplies
In forward, push-pull and synchronous-rectified converters, the IRF1010NPBF-VB serves as the primary-side switch in 12-48 V input systems. Its 80 nC total gate charge allows practical gate-drive design at sub-100 kHz frequencies, the regime the datasheet explicitly optimizes for. The 55 V VDSS accommodates transformer leakage spikes beyond a 36-48 V rail when clamped by an RCD snubber. Conduction loss stays predictable thanks to the 14 mOhm on-resistance, and the 180 W case-mounted dissipation rating gives generous thermal headroom for hard-switched duty. The TO-220AB package suits prototype and low-volume industrial power supplies where reworkability and easy heatsink attachment outweigh the board area savings of SMD alternatives.
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UPS and Inverter Stages
Offline UPS battery-inverter bridges running from 12 V or 24 V battery strings benefit from the IRF1010NPBF-VB's high current rating and through-hole serviceability. Parallel devices share current acceptably because RDS(on) has a positive temperature coefficient, discouraging thermal runaway; a common practice is paralleling several IRF1010NPBF-VB units with individual gate resistors to average switching energy. Estimated: four devices in parallel present roughly 3.5 mOhm equivalent on-resistance, cutting conduction loss nearly fourfold. The 55 V rating covers flyback spikes on a 24 V bus, and the industrial qualification level stated in the datasheet aligns with the operating environment of standby power equipment.
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Battery Management and Protection
For low-side disconnect and protection switches on 12 V and 24 V battery systems, the IRF1010NPBF-VB offers a robust solution: 85 A current capacity, 14 mOhm on-resistance for low voltage drop, and a 55 V rating that survives load-dump style transients on clamped systems. Battery chargers and solar charge controllers use it as the series or switching element in buck topologies. Estimated: at 50 A, the device drops only about 0.7 V, which matters for preserving usable battery capacity. The wide safe operating area from the planar cell structure tolerates short-circuit and inrush events better than trench parts with narrower SOA, and heatsink mounting supports sustained duty in outdoor and industrial enclosures.
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Automotive-Adjacent Industrial Controllers
Industrial controllers derived from 12 V vehicle architectures - winch controllers, pump drivers, material-handling equipment - can use the IRF1010NPBF-VB as a rugged low-side switch. The TO-220AB through-hole format resists vibration-related solder-joint fatigue better than fine-pitch SMD parts and simplifies field service, an important consideration in equipment with long service lives. The 55 V VDSS covers clamped 24 V systems, and 14 mOhm RDS(on) keeps self-heating moderate: Estimated: 20 A dissipates only 5.6 W. Designers should note the datasheet qualifies the device for the industrial market; for genuinely automotive-production programs, verify automotive qualification separately with the supplier rather than assuming the industrial grade suffices.
추천
Repair and Maintenance of Legacy Power Boards
Because the IRF1010 footprint is one of the most widely cloned in the power-MOSFET industry, the IRF1010NPBF-VB is a natural stocking part for repair shops servicing welders, inverters, chargers, and motor drives built around IRF1010N, IRF3205, IRF1407 and related TO-220 G-D-S devices. The through-hole leads allow hand soldering and socket mounting; the metal tab bolts to existing heatsinks without modification. Replacement procedure: discharge gate capacitance, verify VGS drive amplitude of at least 10 V, replace all parallel devices as a matched set, and check gate resistors for drift. At LCSC pricing of roughly $0.37 per unit as of 2026-10-20, maintaining inventory is economical.
추천
추천 제품 요약
엔지니어링 참조 데이터: IRF1010NPBF-VB — 비교, 설계 지침 및 규정 준수 정보.
선택 가이드
대체품과의 비교
| 파라미터 | 이 제품 | IRF1010NPBF | IRF1010EPBF | IRF1407PBF | IRF3205PBF | IRFB4110PBF |
|---|---|---|---|---|---|---|
| Package | TO-220AB | TO-220AB - same | TO-220AB - same | TO-220AB - same | TO-220AB - same | TO-220AB - same |
| Brand | VBsemi Elec | Infineon | Infineon | Infineon | Infineon | Infineon |
| Drain-Source Voltage | 55 V | 55 V | 55 V | 75 V | 55 V | 100 V |
| Continuous Drain Current | 85 A (Tc) | 85 A (Tc) | 75 A class | 130 A class | 110 A class | 180 A class |
| Mounting | Through Hole | Through Hole | Through Hole | Through Hole | Through Hole | Through Hole |
주요 차별점
- Lowest cost per amp in a serviceable through-hole package (vs IRF3205PBF)
- Wide SOA planar structure (vs IRF3205PBF)
- Exact functional clone of the industry-standard IRF1010N (vs IRF1010NPBF)
설계 노트
Estimated: at 40 A continuous, conduction loss is 40^2 x 0.014 Ohm = 22.4 W. The TO-220AB junction-to-case resistance must be combined with a heatsink and thermal interface; free-air operation supports only a few watts. For sustained currents above roughly 15 A, bolt the tab to a heatsink rated to keep the case near 25-60 C. Apply thermal paste and use an insulated shoulder washer if the tab (Drain) cannot be grounded.
Drive the gate with 10 V or more to guarantee the specified 14 mOhm on-resistance; logic-level 5 V drive will leave the channel partially enhanced and cause excessive heating. Insert a small series gate resistor (4.7-22 Ohm typical) to control switching speed and damp parasitic oscillation with long leads. Keep switching below 100 kHz per the datasheet optimization; above that, the 80 nC gate charge and switching losses dominate the loss budget.
The Drain is connected to the metal tab - do not short the tab to a grounded heatsink without insulation. When paralleling devices, give each FET its own gate resistor to force current sharing during switching transitions. In inductive loads, provide a freewheel path or snubber, and verify the 55 V rating is never approached without margin. Replacing one device of a parallel set in repairs can shift current sharing; replace sets together.
규정 준수 정보
PBF suffix indicates Pb-free, RoHS-compliant construction per the IRF1010N datasheet; the device is qualified for the Industrial market per the Infineon datasheet.
