K3LKCKC0BM-MGCP - 64Gb LPDDR5 6400Mbps DRAM | Samsung
부품 번호: K3LKCKC0BM-MGCP ✓ 활성| 수량 | 단가 | 합계 |
|---|---|---|
| 1 | $57.72 | $57.72 |
| 10 | $54.83 | $548.30 |
| 100 | $51.95 | $5,195.00 |
| 500 | $49.06 | $24,530.00 |
| 1,000 | $46.18 | $46,180.00 |
K3LKCKC0BM-MGCP 개요
LPDDR5 (Low Power Double Data Rate 5) is a JEDEC-defined generation of mobile DRAM optimized for high bandwidth and low power consumption in battery-operated and performance-driven systems. Within the memory hierarchy, DRAM is a volatile random-access memory used as main system memory, sitting between the processor and non-volatile storage such as NAND flash. LPDDR5 succeeds LPDDR4X with higher data rates, lower operating voltage, and power-saving features.
Key features of the K3LKCKC0BM-MGCP include its 64 Gbit density (8 GB per die), the LPDDR5 parallel interface running at 6400 Mbps per pin, and a 32-bit-wide memory organization (2G x32). These attributes make it well suited to flagship smartphone SoCs, AI edge accelerators, and automotive infotainment platforms that demand high memory bandwidth with tight power budgets.
Technically, the device uses CMOS technology in a fine-pitch ball grid array, with core, I/O, and interface rails split across 500 mV/900 mV/1.05 V/1.8 V domains per LPDDR5 power architecture. The FBGA-315 ball map supports high-speed signal routing with controlled impedance and on-die termination practices defined by the LPDDR5 specification.
Typical applications include mobile handset main memory, AI/edge computing modules, 5G networking equipment buffers, and automotive infotainment and ADAS compute platforms.
Design consideration: strict length-matched PCB routing and reference-plane integrity are essential at 6400 Mbps; follow the Samsung datasheet layout guidelines for ball mapping, decoupling, and VDDQ rail design.
This page synthesizes distributor pricing, stock availability, drop-in family alternatives, and practical design notes not found in the manufacturer datasheet.
드롭인 대체품: K3LKCKC0BM-MGCP — 동일 패키지, 핀 호환. PCB 재작업이 필요한 다른 패키지 부품은 제외됩니다.
이 시리즈의 변형
다음과 드롭인 호환되는 동일 시리즈 모델: K3LKCKC0BM-MGCP (동일 폼 팩터 및 풋프린트) — 차이점: Interface, Package, Memory Type, Operating Temperature, RoHS Status.
빠른 비교 도구 — 나란히 비교할 대체 부품을 선택하십시오:
K3LKBKB0BM-MGCP
✅ 드롭인✓ 재고 있음
$46.62 / 개
데이터시트 보기 →K3KL9L90CM-MGCT
✅ 드롭인 ⚠️ 사양 미검증✓ 재고 있음
$36.91 / 개
데이터시트 보기 →K3KL8L80CM-MGCT
✅ 드롭인 ⚠️ 사양 미검증✓ 재고 있음
가격 문의
데이터시트 보기 →K3LKJKJ0CM-MUCP
✅ 드롭인 ⚠️ 사양 미검증✓ 재고 있음
가격 문의
데이터시트 보기 →K3LK8K80CM-MFCP
✅ 드롭인 ⚠️ 사양 미검증✓ 재고 있음
가격 문의
데이터시트 보기 →K3LK2K20CM-JFCP
✅ 드롭인 ⚠️ 사양 미검증✓ 재고 있음
가격 문의
데이터시트 보기 →K3LKCKC0BM-MGCP 최대 정격 & 전기적 특성
| 메모리 유형 | LPDDR5 SDRAM (DRAM) |
| 메모리 크기 | 64 Gbit |
| Memory Organization | 2G x32 |
| 데이터 속도 | 6400 Mbps |
| 인터페이스 | Parallel |
| Technology | CMOS |
| Supply Voltages | 500 mV, 900 mV, 1.05 V, 1.8 V |
| 동작 온도 | -25 C to +85 C |
| 패키지 | FBGA-315 (PBGA315) |
| 실장 유형 | Surface Mount |
| Volatile / Non-Volatile | Volatile |
| RoHS 상태 | Compliant |
K3LKCKC0BM-MGCP fbga-315 (pbga315) 핀 구성 가이드
K3LKCKC0BM-MGCP(fbga-315 (pbga315) 패키지)의 핀 구성입니다. 이 디지털 IC에는 GPIO, 통신 인터페이스(UART, SPI, I2C), 전원 핀이 포함되어 있습니다. 대체 핀 기능과 구성 옵션은 제조사 데이터시트를 참조하십시오. 임베디드 시스템 설계와 PCB 레이아웃에 필수적입니다.
다음에 대한 상세 핀아웃 데이터 없음: K3LKCKC0BM-MGCP.
다음을 참조하십시오: 데이터시트 전체 핀 구성은 다음을 참조하십시오.
일반적인 애플리케이션
K3LKCKC0BM-MGCP 적합 용도: 6 애플리케이션s: Flagship Smartphone Main Memory, AI Edge Computing Modules, 5G Networking Equipment Buffers, Automotive Infotainment Compute, Tablets and Notebook-Class Mobile Computing, Industrial Vision and Machine Learning Gateways.
Flagship Smartphone Main Memory
The K3LKCKC0BM-MGCP fits flagship smartphone main memory because its 64 Gbit density provides 8 GB per package and its LPDDR5 interface sustains 6400 Mbps per pin, delivering the aggregate bandwidth that modern application processors demand for multitasking, gaming, and computational photography. Its multi-rail power architecture (500 mV core, 900 mV/1.05 V VDDQ, 1.8 V interface) aligns with mobile PMIC designs, and deep power-down modes minimize standby drain on the battery. In a typical design, one or two FBGA-315 packages sit directly beneath or beside the SoC with length-matched LPDDR5 traces, trading slightly higher cost than LPDDR4X for roughly 50% more bandwidth per pin and lower operating voltage, which reduces total memory subsystem power during heavy use.
추천
AI Edge Computing Modules
Edge AI accelerators and smart-camera SoCs need high-bandwidth, low-power DRAM to feed neural network inference workloads, and the K3LKCKC0BM-MGCP delivers exactly that profile: 64 Gbit of LPDDR5 running at 6400 Mbps provides the streaming bandwidth for activation and weight transfers, while the 2G x32 organization simplifies 32-bit-wide controller mapping. The -25 C to +85 C range suits enclosed edge hardware, and the FBGA-315 package fits compact SOM and module form factors. Compared with DDR4 SODIMM-class memory, LPDDR5 cuts I/O power substantially at equivalent bandwidth; the trade-off is soldered-down memory that is not field-upgradable, so density selection at design time is permanent. Pair with a PMIC providing the 500 mV and 1.05 V rails with correct sequencing.
추천
5G Networking Equipment Buffers
5G baseband units, small-cell radios, and network processing cards require DRAM with high sustained bandwidth for packet buffering, and the K3LKCKC0BM-MGCP's 6400 Mbps LPDDR5 interface provides the per-pin throughput needed at low latency. Its 64 Gbit capacity accommodates deep buffer pools for burst traffic absorption, while the parallel x32 organization maps cleanly onto network processor memory controllers. The industrial-leaning -25 C to +85 C temperature rating supports outdoor enclosures with passive cooling. Designers should budget for strict signal integrity: 6400 Mbps signaling over backplane-adjacent traces requires solid reference planes and ODT tuning per the Samsung datasheet. Compared with GDDR alternatives, LPDDR5 offers better power efficiency for always-on network hardware, at the cost of lower peak bandwidth than GDDR6.
추천
Automotive Infotainment Compute
Automotive IVI head units and digital cockpit SoCs run map rendering, media, and voice workloads that benefit from the K3LKCKC0BM-MGCP's 64 Gbit density and 6400 Mbps bandwidth. The -25 C to +85 C operating range covers most cabin electronics environments, though designers must confirm whether their platform requires an AEC-Q100-qualified LPDDR5 variant, since this standard-grade part is not automotive-certified per available data. The soldered FBGA-315 package withstands vibration better than socketed DIMMs, and LPDDR5's low operating voltage reduces thermal load in sealed enclosures. Power sequencing of the 500 mV, 1.05 V, and 1.8 V rails must follow the LPDDR5 specification during the vehicle's cold-crank and sleep-wake cycles to avoid controller lock-up, making the PMIC choice a critical companion decision.
추천
Tablets and Notebook-Class Mobile Computing
Premium tablets and thin-and-light notebook designs increasingly adopt LPDDR5 soldered memory, and the K3LKCKC0BM-MGCP's 8 GB-per-package density allows a single package to replace multiple lower-density parts, simplifying PCB layout and reducing the BOM. At 6400 Mbps, memory bandwidth supports integrated graphics and productivity workloads, while LPDDR5's per-bank refresh and fine-grained power-down states cut idle power - a direct battery-life win versus LPDDR4X designs of equivalent capacity. The 2G x32 organization supports 32-bit and 64-bit bus configurations depending on how many packages are populated. The key design trade-off is non-upgradability: capacity must be finalized at design time, so product planners should size memory against projected OS and application growth over the product's multi-year service life.
추천
Industrial Vision and Machine Learning Gateways
Industrial machine-vision gateways and smart-factory edge servers process multiple camera streams with on-device inference, and the K3LKCKC0BM-MGCP supplies the 64 Gbit working set plus 6400 Mbps bandwidth these pipelines require. The -25 C to +85 C rating suits control cabinets near machinery, and the FBGA-315 soldered package resists shock and vibration in Factory 4.0 environments. Its multi-rail LPDDR5 power architecture pairs naturally with industrial PMICs that already generate 1.05 V and 1.8 V rails; the 500 mV core rail typically requires a dedicated high-efficiency buck converter. Compared with conventional DDR4 UDIMMs, LPDDR5 saves board space and power but requires the memory to be designed in permanently - acceptable for fixed-function industrial gateways with long, unchanged production runs.
추천
추천 제품 요약
엔지니어링 참조 데이터: K3LKCKC0BM-MGCP — 비교, 설계 지침 및 규정 준수 정보.
선택 가이드
대체품과의 비교
| 파라미터 | 이 제품 | K3LKBKB0BM-MGCP | K3KL9L90CM-MGCT | K3LKJKJ0CM-MUCP |
|---|---|---|---|---|
| Package | FBGA-315 (PBGA315) | FBGA-315 - same package | FBGA-315 - same family | FBGA-315 - same family |
| Brand | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics |
| Memory Technology | LPDDR5 SDRAM | LPDDR5 SDRAM | LPDDR5 SDRAM | LPDDR5 SDRAM |
| Lifecycle Status | Active | Active | Active | Active |
주요 차별점
- Maximum density in the family comparison set (vs K3LKBKB0BM-MGCP)
- High bandwidth LPDDR5 interface (vs K4AAG165WM-BCWE (DDR4 alternative))
- Trade-off: no cross-brand drop-in (vs Micron / SK Hynix LPDDR5 64 Gbit)
설계 노트
At 6400 Mbps, LPDDR5 address/command and data lines must be length-matched within the tolerance stated in the Samsung datasheet, routed over continuous reference planes with controlled single-ended and differential impedance. Minimize via stubs, keep the DRAM within the SoC's specified trace-length budget, and simulate both signal integrity and power integrity (PDN impedance) before fabrication. Use on-die termination (ODT) settings recommended in the LPDDR5 specification rather than discrete termination resistors.
The K3LKCKC0BM-MGCP requires four rails: 500 mV (core), 900 mV and 1.05 V (VDDQ domains), and 1.8 V (interface). Provide dedicated low-ESR ceramic decoupling at each FBGA ball group per the Samsung reference layout, and ensure the PMIC supports the LPDDR5 power-state transitions (deep sleep, self-refresh) with correct rail sequencing. Estimated: a single package drawing several hundred milliwatts at full bandwidth warrants a dedicated buck converter for the VDDQ rails rather than sharing with other logic.
Do not assume cross-vendor LPDDR5 packages are pin-to-pin drop-in: ball maps differ between Samsung, Micron, and SK Hynix even at identical density and speed. Also, this part is rated -25 C to +85 C and is not shown as AEC-Q100 qualified in available data - do not deploy in automotive safety paths without qualification confirmation. Finally, soldered-down LPDDR5 cannot be field-upgraded, so validate memory init/training firmware against the exact -MGCP speed bin.
규정 준수 정보
RoHS compliance stated in JLCPCB part listing. No REACH, halogen-free, or conflict-minerals statements found in provided data. No AEC-Q100 qualification indicated in available data.
