MRF6V2300NR1 - 300W, 50V RF Power MOSFET 10-600 MHz | NXP
MPN: MRF6V2300NR1 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $145 | $145.00 |
| 10 | $132.5 | $1,325.00 |
| 100 | $119 | $11,900.00 |
| 250 | $112.75 | $28,187.50 |
| 500 | $107.5 | $53,750.00 |
MRF6V2300NR1 Overview
An RF power MOSFET (RF power field-effect transistor) is a discrete semiconductor device engineered to amplify radio-frequency signals at high efficiency and power levels. It belongs to the broader hierarchy: RF power transistor -> power MOSFET -> MOSFET -> FET -> discrete semiconductor. Compared with bipolar RF power transistors, lateral MOSFETs offer higher gain, simpler biasing, and superior thermal stability. The MRF6V2300NR1 belongs specifically to NXP's MRF6V family of 50 V broadband RF LDMOS parts.
Key features include 300 W CW output power at 220 MHz with 25.5 dB power gain into a 50 V supply, broadband 10 MHz to 600 MHz matched operation, and a 110 V drain-source breakdown rating for transient headroom. The TO-270 WB-4 ceramic body provides low thermal resistance and high RF isolation, enabling small-footprint amplifier pallets and matched PCB modules.
The device is built on a 50 V lateral MOSFET process with a high-resistivity silicon substrate, minimizing parasitic capacitance. At 220 MHz in Class AB, the device demonstrates 25.5 dB gain at 300 W CW into a 50 V rail. Unmatched input and output ports allow designers to optimize their own broadband matching networks for industrial heating, plasma generation, MRI exciter, particle accelerator, and broadcast FM/TV service classes.
Typical applications include UHF/VHF CW industrial heating, RF plasma generators for semiconductor etch and medical ablation, FM/VHF broadcast amplifiers, MRI/NMR transmit amplifiers, and particle accelerator driver stages. The unmatched broadband performance simplifies wideband amplifier design across 10-600 MHz with a single part.
When designing with this device, ensure the drain bias network uses adequate RF choking and the load VSWR stays within the safe operating area (SOA). The unmatched input/output ports require designer-optimized matching networks; proper thermal management via the TO-270 flange is mandatory at full 300 W CW power.
This page synthesizes manufacturer datasheet values, distributor pricing, parametric comparisons with NXP same-family drop-ins, and practical thermal/SOA design notes not available on a single competitor product page.
Drop-in alternatives for MRF6V2300NR1 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Variants in this series
Same-series models that are drop-in compatible with MRF6V2300NR1 (same form factor and footprint) — differing in Input Matching, Mounting Type, Technology, Transistor Type.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
MRF6V2300NBR1
✅ Drop-In📋 Reference alternative (not in catalog)
MRF6V2010NR1
✅ Drop-In📋 Reference alternative (not in catalog)
MRF6V12250NR1
✅ Drop-In📋 Reference alternative (not in catalog)
MRF6V2300NR1 Maximum Ratings & Electrical Characteristics
| Transistor Type | RF Power MOSFET (LDMOS, N-Channel, Enhancement-Mode, Lateral) |
| Drain-Source Voltage (Vdss) | 110 V |
| Continuous Drain Current (Id) | 2.5 mA DC bias reference |
| Output Power (Pout) | 300 W CW |
| Test Frequency | 220 MHz |
| Power Gain | 25.5 dB |
| Operating Frequency Range | 10 MHz to 600 MHz |
| Drain Bias Voltage | 50 V |
| Mode of Operation | CW (continuous wave), Class AB |
| Package Type | TO-270 WB-4 (ceramic, flanged, single-ended) |
| Input Matching | Unmatched |
| Output Matching | Unmatched |
| Technology | Lateral MOSFET (LDMOS-like) |
| Mounting Type | Surface / flange-mount with screws |
MRF6V2300NR1 Pin Configuration
| Pin 1 | GATE — Gate DC bias input (high-impedance, drive from regulated bias supply with RF decoupling) |
| Pin 2 | DRAIN-IN — Drain RF input / DC bias feed (50 V, RF-choked to matching network) |
| Pin 3 | DRAIN-OUT — Drain RF output tab (high-power RF output path to load matching) |
| Pin 4 | SOURCE / FLANGE — Source / thermal ground (low-inductance mounting flange, screw-down to heatsink) |
Safe Operating Area - MRF6V2300NR1
Typical Applications
MRF6V2300NR1 is suitable for 6 applications: Industrial RF Heating Systems, RF Plasma Generators (Semiconductor Etch/Medical Ablation), UHF/VHF Broadcast Amplifiers, MRI/NMR RF Transmit Amplifiers, Particle Accelerator Driver Stages, RF Power Laboratory/Instrumentation Amplifiers.
Industrial RF Heating Systems
The MRF6V2300NR1 delivers 300 W CW across 10-600 MHz from a 50 V rail, fitting industrial RF heating platforms that need broadband excitation of plastic pre-heaters, wood-drying applicators, and induction-style dielectric heaters. Its lateral LDMOS die handles the elevated VSWR of resonant work coils without common-mode instability, while the unmatched input/output allow per-platform matching-network tuning for varied load impedances. Thermal headroom is provided by the TO-270 WB-4 ceramic flange bolting directly to a forced-air or water-cooled heatsink - critical when 100-150 W of internal dissipation (estimated) must be removed continuously. Compared with bipolar transistors, the MOSFET's 25.5 dB gain at 220 MHz reduces driver-stage complexity, letting one MRF6V2300NR1 replace a multi-device ladder. PCB layouts should keep the gate-bias feedline short and bypassed to prevent low-frequency oscillation in long-cable heater tanks.
Recommended
RF Plasma Generators (Semiconductor Etch/Medical Ablation)
Plasma-generation systems for semiconductor etch chambers and medical RF ablation rely on high-CW power at ISM bands (13.56/27/40 MHz) where the MRF6V2300NR1's 10-600 MHz band covers the entire operating range. Its 110 V drain breakdown tolerates the reflected power transients during plasma ignition and arc events - a critical reliability feature in etch chambers where plasma impedance swings rapidly. The 25.5 dB gain at 220 MHz supports Class AB driver-final architectures with minimal stage count, reducing PCB area and BOM cost in benchtop ablation generators. The TO-270 WB-4 ceramic flange sustains the elevated baseplate temperature of multi-hour etch cycles while protecting the gate-oxide from thermal-runaway. Designers should add a circulator or high-VSWR protection shutdown to keep within the datasheet's specified load-mismatch tolerance.
Recommended
UHF/VHF Broadcast Amplifiers
FM and VHF-band broadcast transmitters benefit from the MRF6V2300NR1's 25.5 dB gain and broadband capability, replacing stacked narrowband PA bricks with a single broadband amplifier. The 300 W CW rating suits translator, booster, and low-power community-broadcast service classes where regulatory power ceilings cap output below 500 W ERP. Its linear Class AB operation supports low-distortion amplification for FM monoaural and stereo multiplex signals when paired with appropriate bias-stabilization circuitry. The unmatched topology lets broadcast OEMs reuse the same MRF6V2300NR1 across multiple frequency plans (66-108 MHz FM, 174-230 MHz VHF, 470-700 MHz UHF) by swapping matching PCB subassemblies - a major inventory advantage over pre-matched parts. Front-panel metering of drain current lets operators detect antenna ice-loading and progressive mismatch before SOA limits are reached.
Recommended
MRI/NMR RF Transmit Amplifiers
The MRF6V2300NR1's broadband match-capable design and 300 W CW power rating address MRI/NMR transmit amplifier needs at 64 MHz (1.5T), 128 MHz (3T), and 300 MHz (7T) Larmor frequencies. The lateral MOSFET's clean time-domain response minimizes pulse-fidelity artifacts that would otherwise require additional digital predistortion in fast-gradient echo-planar imaging sequences. Its 50 V bias and 110 V drain breakdown tolerate the high-voltage swings of large birdcage coils, while the ceramic TO-270 body provides MRI-bore-friendly low-magnetic-package construction. The 25.5 dB gain reduces transmit-coil drive-chain part count, important in compact head-only and extremity MRI scanners where PCB real estate is constrained. Continuous-duty 300 W operation aligns with fast-spin-echo and turbo-spin-echo clinical protocols that hold RF duty cycles high.
Recommended
Particle Accelerator Driver Stages
Particle accelerator RF driver chains at 80-200 MHz - including cyclotrons used in proton therapy and PET isotope production - leverage the MRF6V2300NR1's 300 W CW output combined with a high breakdown voltage that handles the resonator's reflected impedance during cavity filling cycles. Its unmatched broadband behavior lets one driver amplifier serve multiple cavity frequencies across linac stages, simplifying ATE reconfiguration in research and hospital-physics environments. The TO-270 WB-4 ceramic package meets the low-outgassing and high-vacuum compatibility sometimes required at the cavity front-end, while the high gain (25.5 dB) reduces solid-state driver count by one stage versus 10 dB-class bipolar designs. Designers should monitor forward/reflected power at the cavity coupler to detect beam-loading transients outside the SOA envelope.
Recommended
RF Power Laboratory/Instrumentation Amplifiers
RF laboratories, EMC test houses, and radiated-immunity test systems benefit from the MRF6V2300NR1 as a broadband Class AB output stage driving antennas, TEM cells, and bulk-current-injection probes across 10-600 MHz. The unmatched topology enables one amplifier pallet to be retuned to each test band (radiated immunity, conducted immunity, medical EMC), reducing test-house capital cost versus buying a pre-matched brick per band. Its 25.5 dB gain accommodates low-drive signal-generator sources in standardized IEC 61000-4-3 and IEC 61000-4-6 test setups, where amplifier linearity and 1 dB compression headroom are routinely probed. Continuous 300 W CW supports long-duration stress tests without rollover into thermal compression. Front-panel instrumentation-grade current sensing lets lab engineers characterize gain flatness under varying VSWR.
Recommended
Recommended Products Summary
Engineering reference data for MRF6V2300NR1 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | MRF6V2300NBR1 | MRF6V2010NR1 | MRF6V12250NR1 |
|---|---|---|---|---|
| Brand | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors |
| Package | TO-270 WB-4 | TO-270 WB-4 - same | TO-270 WB-4 - same | TO-270 WB-2 - same family, different lead count |
| Output Power (CW) | 300 W | 300 W | 10 W | 250 W |
| Drain Bias Voltage | 50 V | 50 V | 50 V | 50 V |
| Drain-Source Breakdown | 110 V | 110 V | 110 V | 110 V |
| Operating Frequency | 10-600 MHz | 10-600 MHz | 10-600 MHz | 10-600 MHz |
| Input Matching | Unmatched | Matched | Unmatched | Unmatched |
Key Differentiators
- Highest CW output power in NXP's 50 V MRF6V family in the TO-270 WB-4 package (vs MRF6V12250NR1)
- Unmatched input/output allow full broadband design flexibility (vs MRF6V2300NBR1)
- Continuous 10-600 MHz coverage in a single part (vs MRF6V2010NR1)
Design Notes
At 300 W CW output into a 50 V rail, the device dissipates approximately 100-150 W internally (estimated, based on typical RF LDMOS efficiency; consult datasheet for measured value). The TO-270 WB-4 ceramic flange must be bolted to a forced-air-cooled or water-cooled heatsink with thermal compound; junction-to-case thermal resistance is in the 0.2-0.3 C/W range. A baseplate temperature below 70 C is recommended to maintain the long-term reliability margin required for industrial/medical duty cycles.
Use low-loss RF substrate (Rogers RO4003C or equivalent) for the matching-network PCB and keep gate-bias feedlines short - long gate traces invite VHF parasitic oscillation. Place RF bypass capacitors (100 pF + 1 nF + 10 uF) within 5 mm of the gate and drain leads to suppress parametric/oscillation modes typical in unmatched 50 V LDMOS. Ensure the flange-mount screws are torqued evenly and the PCB ground paddle has 30+ ground vias stitching it to the flange - poor grounding here is the #1 cause of intermittent RF instability.
Never exceed the 110 V Vdss rating, even under load-mismatch transient conditions - always add a high-VSWR protection circuit that disables drain bias within microseconds of arc detection. Do not operate the device into a short or open load without the recommended protection; the unmatched topology's broadband capability becomes a liability into extreme impedances. Avoid biasing the gate above the rated Vgs(max) - use a regulated gate-bias supply with current limiting, not a simple resistive divider, especially during startup/shutdown sequencing.
Compliance Information
RoHS/REACH/lead-free status not stated in the verified web snippets; designers should consult the NXP product page directly. AEC-Q100 not applicable - this is an industrial/medical/scientific RF power part, not an automotive-grade IC.
