MRFE6S9160HR3 - 35W, 880MHz RF Power MOSFET | NXP
부품 번호: MRFE6S9160HR3 ✓ 활성| 수량 | 단가 | 합계 |
|---|---|---|
| 1 | $38.75 | $38.75 |
| 10 | $34.82 | $348.20 |
| 100 | $31.04 | $3,104.00 |
| 500 | $27.91 | $13,955.00 |
| 1,000 | $25.2 | $25,200.00 |
MRFE6S9160HR3 개요
An RF power MOSFET is a lateral MOSFET optimized to deliver high RF output power at high efficiency into a 50 ohm load, typically used as the final amplification stage in a transmitter chain. The MRFE6S9160HR3 belongs to NXP's HV6E family of laterally-diffused metal-oxide-semiconductor RF devices, which occupy the hierarchy: RF power MOSFET -> RF power transistor -> discrete semiconductor -> amplifier building block. The lateral architecture gives excellent thermal conductivity between the active silicon and the package flange, enabling reliable high-power pulsed operation such as the N-CDMA and GSM/EDGE waveforms used in 900 MHz cellular base stations.
Key datasheet characteristics include 35 W average output power at 880 MHz (VDD = 28 V), 21 dB small-signal power gain, drain efficiency above 32 percent in N-CDMA, and operation across 865-960 MHz. The device is also qualified for multicarrier amplifier (MCPA) applications where multiple modulated carriers share a single final stage. Built-in ESD protection and a high breakdown voltage simplify base-station final-stage design and reduce tuning iterations during prototype bring-up.
Architecture-wise, the MRFE6S9160HR3 is built on NXP's HV6E laterally-diffused process, which delivers a high breakdown voltage suitable for 28 V operation while still supporting broadband RF performance. The NI-780H-2L package provides a low-inductance flange-ground lead, two RF leads for input and output, and a drain lead that is decoupled through the supply feed. Reference designs from NXP show this part delivering typical CW P1dB in the 55-80 W range and an internally-matched input that requires only a small matching network on the demonstration PCB.
Typical applications include 900 MHz GSM/EDGE base-station power amplifiers, N-CDMA repeaters, multicarrier power amplifier (MCPA) modules for cellular infrastructure, and RFID or industrial-scientific RF links in the 865-960 MHz band. The combination of high gain and ruggedness also suits driver stages for higher-power LDMOS finals in similar frequency bands. Designers should follow NXP's evaluation PCB layout, provide a minimum load VSWR protection loop, and consider a small gate-bias sequencing circuit to keep the part in safe bias during RF ramp-up.
드롭인 대체품: MRFE6S9160HR3 — 동일 패키지, 핀 호환. PCB 재작업이 필요한 다른 패키지 부품은 제외됩니다.
이 시리즈의 변형
다음과 드롭인 호환되는 동일 시리즈 모델: MRFE6S9160HR3 (동일 폼 팩터 및 풋프린트) — 차이점: Mounting Type, Transistor Type, Technology, Package, Manufacturer.
빠른 비교 도구 — 나란히 비교할 대체 부품을 선택하십시오:
MRFE6S9160HSR3
✅ 드롭인✓ 재고 있음
$55.2 / 개
데이터시트 보기 →MRF6S9160HR3
✅ 드롭인✓ 재고 있음
$510 / 개
데이터시트 보기 →MRF6S9160HSR3
✅ 드롭인✓ 재고 있음
$92.4 / 개
데이터시트 보기 →MRFE6VP100HR5
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
MRFE6S9045NR1
✅ 드롭인 ⚠️ 사양 미검증📋 참조 대체품 (카탈로그에 없음)
MRFE6S9160HR3 최대 정격 & 전기적 특성
| Manufacturer | NXP Semiconductors |
| 트랜지스터 유형 | N-Channel Enhancement-Mode Lateral MOSFET |
| Technology | HV6E lateral MOSFET (LDMOS-like) |
| Drain-Source Voltage (V DSS) | 70 V (max) |
| Operating Frequency Range | 865 MHz to 960 MHz |
| Test Frequency | 880 MHz |
| Drain Supply Voltage (V DD) | 28 V (typical) |
| Output Power (Average) | 35 W (single-carrier N-CDMA, 880 MHz) |
| Power Gain (G ps / G p) | 21 dB (typical at 880 MHz) |
| Drain Efficiency | 32.4% (typical, N-CDMA, 880 MHz) |
| 패키지 / 케이스 | NI-780H-2L (ceramic/metal air-cavity flange-mount) |
| 실장 유형 | Chassis / Flange mount (through-hole RF leads) |
| 동작 온도 범위 | -40C to +150C (junction) |
| Input Match | Internally matched input (broadband) |
| RoHS 상태 | Compliant |
| Lead-Free | Yes |
| MSL 레벨 | Not applicable (non-SMD air-cavity package) |
MRFE6S9160HR3 핀 구성
| 핀 1 | RFIN / Gate — RF input (gate) - internally matched |
| 핀 2 | RFOUT / Drain — RF output (drain) - 28 V VDD feed |
| 핀 Flange | GND / Source — Source & thermal pad - chassis mount |
안전 동작 영역 (DC, typical, Tj<=150C)
일반적인 애플리케이션
MRFE6S9160HR3 적합 용도: 6 애플리케이션s: 900 MHz GSM / GSM EDGE Base Station Final Stage, Multicarrier Power Amplifier (MCPA) Module, N-CDMA / 3G Repeater Power Stage, Industrial / Scientific 900 MHz RF Links, Driver Stage for Higher-Power LDMOS Finals, Public-Safety / LTE Band 8 Infrastructure.
900 MHz GSM / GSM EDGE Base Station Final Stage
The MRFE6S9160HR3 is a textbook 900 MHz base-station final stage for cellular GSM and GSM EDGE base stations because it delivers 35 W average N-CDMA-rated power at 880 MHz from a 28 V supply while preserving the linearity needed for the EDGE 8-PSK constellation. According to the NXP datasheet MRFE6S9160H, the part's 21 dB power gain reduces the driver-stage count and its 32.4 percent drain efficiency cuts dissipated heat in the PA shelf. Engineers typically place one MRFE6S9160HR3 per sector in a 2-carrier EDGE amplifier, bias it in Class AB, and add a small gate-bias sequencing network to keep the device off until the drain voltage has settled.
추천
Multicarrier Power Amplifier (MCPA) Module
Multicarrier power amplifiers that combine several modulated GSM/EDGE carriers into a single final stage are a natural fit for the MRFE6S9160HR3 because its lateral MOSFET structure and broadband input matching let it handle composite peak-to-average ratios of 8-10 dB without distortion. Placed at the heart of an MCPA shelf between the combiner and the duplexer, the MRFE6S9160HR3 typically outputs 35 W average across 865-960 MHz with the linearity margin needed by MCPA back-off. According to the NXP datasheet, the part's ruggedness against load VSWR swings (often 5:1 in MCPA operation) avoids the need for an external isolator, simplifying the thermal and bill-of-materials budget.
추천
N-CDMA / 3G Repeater Power Stage
Repeater infrastructure that re-broadcasts N-CDMA signals at 880 MHz needs a linear, moderately high-power final stage, and the MRFE6S9160HR3 is well-suited because its single-carrier N-CDMA rating was defined for exactly this duty cycle. According to the NXP datasheet, the device delivers 35 W average with the ACPR (adjacent-channel power ratio) headroom that N-CDMA repeater specifications require. In a typical repeater the MRFE6S9160HR3 sits after a Class A driver with a digital predistortion loop, and the bias network is set for ~50 mA quiescent current to optimize linearity over efficiency.
추천
Industrial / Scientific 900 MHz RF Links
Industrial and scientific applications in the 902-928 MHz ISM band share the same RF physics as 900 MHz cellular, and the MRFE6S9160HR3's 865-960 MHz band covers them seamlessly. Designed for narrowband and spread-spectrum links such as SCADA telemetry, RFID readers, and license-free telemetry transmitters, the device delivers a robust 35 W average into a 50 ohm load with efficiency that matters for solar-powered remote sites. According to the NXP datasheet, the rugged NI-780H-2L air-cavity package survives field-site temperature swings better than plastic-packaged alternatives, and the 28 V supply rail is easy to derive from 48 V PoE or battery stacks.
추천
Driver Stage for Higher-Power LDMOS Finals
When a base-station final stage needs more than 35 W average, the MRFE6S9160HR3 doubles as a clean driver for NXP's higher-power HV6E parts such as the MRFE6VP100HR5 or MRFE6P3300H. Its 21 dB of gain at 880 MHz supplies ~3-5 W of drive at the input of a 100 W final without a separate pre-driver, lowering the BOM and simplifying the AGC loop. According to the NXP datasheet MRFE6S9160H, the input match is broadband enough to accept the upstream modulator's distortion products without re-tuning, and the 28 V rail aligns with the driver bias stack used in cellular base-station PAs.
추천
Public-Safety / LTE Band 8 Infrastructure
Public-safety and LTE Band 8 (880-915 MHz uplink / 925-960 MHz downlink) infrastructure reuses the 900 MHz cellular hardware ecosystem, and the MRFE6S9160HR3 is a candidate final-stage device for small-cell and on-site repeater deployments. Designers pair it with a digital pre-distortion (DPD) engine and bias it for class-AB operation to meet the 3GPP ACLR and EVM requirements at the rated 35 W average. According to the NXP datasheet, the lateral MOSFET architecture accepts the wide-bandwidth LTE signal with minimal memory-effects penalty, so the DPD loop closes with a short adaptation period at power-on.
추천
추천 제품 요약
엔지니어링 참조 데이터: MRFE6S9160HR3 — 비교, 설계 지침 및 규정 준수 정보.
선택 가이드
대체품과의 비교
| 파라미터 | 이 제품 | MRFE6S9160HSR3 | MRF6S9160HR3 | MRF6S9160HSR3 | MRFE6VP100HR5 |
|---|---|---|---|---|---|
| Brand | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors |
| Package | NI-780H-2L (air-cavity flange) | NI-780S (ceramic flange) | NI-780H-2L (air-cavity flange) | NI-780S (ceramic flange) | NI-780H-4L (air-cavity flange, larger) |
| Output Power (Average, 880 MHz) | 35 W | 35 W (same die) | 35 W (legacy) | 35 W (legacy) | 100 W (Pavg) |
| Drain Supply Voltage | 28 V | 28 V | 28 V | 28 V | 50 V |
| Power Gain (G ps) | 21 dB | 21 dB | 21 dB | 21 dB | 27 dB |
| Operating Frequency | 865-960 MHz | 865-960 MHz | 865-960 MHz | 865-960 MHz | 470-860 MHz |
| Lifecycle Status | Active (recommended for new designs) | Active | Last-time-buy / replaced | Last-time-buy / replaced | Active |
주요 차별점
- Manufacturer-recommended drop-in successor to the legacy MRF6S9160HR3 (vs MRF6S9160HR3)
- Higher power than the lower-tier MRFE6S9045 with the same NI-family ecosystem (vs MRFE6S9045NR1)
- Significantly lower voltage rail than the MRFE6VP100HR5 simplifies power supply (vs MRFE6VP100HR5)
설계 노트
Estimate (per typical 35 W average N-CDMA use at TC=70C): with ~33% drain efficiency the MRFE6S9160HR3 dissipates ~70 W internally, requiring a chassis-mount heatsink rated <=0.5 C/W thermal resistance to keep Tj below 150C. Use NXP's evaluation PCB footprint with a continuous copper spreader under the NI-780H-2L flange and apply a thin layer of thermal compound to fill mounting-surface voids; failure to do so causes the junction thermal runaway typical of LDMOS-style RF amplifiers.
Follow NXP's reference PCB layout for the MRFE6S9160 evaluation board to keep input/output transmission-line impedance at 50 ohms and to prevent the gate lead from picking up drain-feed energy. Place the drain-bias choke and decoupling capacitors (typically 10 uF + 100 nF in parallel) within 5 mm of the drain lead; route the gate-bias feed through a small ferrite bead and a 10 kOhm series resistor for stability. Recommended: a short, broad gate-trace (~0.5 mm width) to suppress parasitic feedback that can cause oscillation at 800-1000 MHz.
Do not exceed VDSS = 70 V or VGS ratings; never apply RF drive before the drain supply is ramped up (use a gate-bias hold-off circuit) - hot-switching will destroy the device. Estimated safe gate-bias range for Class-AB operation is VGS = +2.7 V to +3.5 V with a starting quiescent current of ~50 mA; check datasheet exact biases after migrating to MRFE6 family variants. Avoid operating into a load VSWR > 5:1 without external protection; the device is rugged but sustained high VSWR will degrade its MTBF.
EMI on the 28 V rail is a frequent cause of spurious outputs in cellular base-station PAs. Install a pi-filter (10 uF electrolytic + ferrite bead + 100 nF ceramic) right at the bias feed-through of the MRFE6S9160HR3's PCB, and add shielding around the input match network to keep RF from leaking into the bias lines. The device's broadband internal input match is forgiving, but a poorly-decoupled bias can couple into the 900 MHz band and re-radiate as spurs in the EDGE spectrum mask.
규정 준수 정보
RoHS and lead-free confirmed via the NXP product page and DigiKey listing. AEC-Q100 does not apply (this is a base-station/air-cavity RF power MOSFET, not an automotive qualified part). Halogen-free status not stated in the verified data.
