TJ60S06M3L(T6L1,NQ - P-Ch -60V -60A 11.2mOhm DPAK+ MOSFET | Toshiba
부품 번호: TJ60S06M3LT6L1.NQ ✓ 활성| 수량 | 단가 | 합계 |
|---|---|---|
| 1 | $1.12 | $1.12 |
| 10 | $0.96 | $9.60 |
| 100 | $0.78 | $78.00 |
| 500 | $0.65 | $325.00 |
| 1,000 | $0.58 | $580.00 |
| 3,000 | $0.52 | $1,560.00 |
TJ60S06M3LT6L1.NQ 개요
A P-channel MOSFET is a voltage-controlled field-effect transistor in which the conductive channel is formed by holes rather than electrons. Because P-channel devices turn on with a negative gate-source voltage, they simplify high-side switching in circuits where the load is tied to ground - no charge pump or bootstrap network is needed to drive the gate. P-channel MOSFETs are typically placed in the power-MOSFET hierarchy under 'P-channel -> MOSFET -> power MOSFET -> discrete semiconductor' and are widely used as reverse-polarity protection, high-side load switches, and synchronous-rectifier complements in DC-DC converters.
Key features of the TJ60S06M3L include the very low 11.2 milliohm Rds(on) at full gate drive, the -60 V drain rating that provides substantial avalanche headroom for 12 V / 24 V automotive buses, and an industry-standard DPAK+ footprint that allows direct PCB mounting with a thermal pad for low thermal resistance. The part is qualified for automotive motor drivers, DC-DC converters, and switching voltage regulators per Toshiba's product family positioning.
Technically, the device uses Toshiba's latest-generation U-MOS trench cell structure to achieve a per-cell figure-of-merit (FOM = Rds(on) x Qg) optimized for switching loss reduction. This makes it particularly suitable for hard-switched applications up to several hundred kHz where switching losses dominate conduction losses. The P-channel polarity allows direct logic-level driving from standard microcontrollers without additional gate-driver circuitry.
Typical applications include automotive ECU load switching, motor-driver H-bridge high-side switches, battery management system (BMS) reverse-polarity protection, synchronous-rectifier secondary-side switches in isolated DC-DC converters, and high-current load management in industrial 24 V systems. The DPAK+ package's exposed thermal pad allows direct PCB heatsinking.
When designing with this device, mind the gate-source voltage rating of +10 V / -20 V - the absolute maximum must not be exceeded even during transients. Use a gate-source resistor (typically 10 kohm) to prevent inadvertent turn-on from Miller-coupling during drain-voltage transients. Verify continuous drain current against your thermal envelope using the SOA curve from the manufacturer datasheet.
This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet alone, providing a single reference for sourcing and second-sourcing the TJ60S06M3L(T6L1,NQ.
드롭인 대체품: TJ60S06M3LT6L1.NQ — 동일 패키지, 핀 호환. PCB 재작업이 필요한 다른 패키지 부품은 제외됩니다.
이 시리즈의 변형
다음과 드롭인 호환되는 동일 시리즈 모델: TJ60S06M3LT6L1.NQ (동일 폼 팩터 및 풋프린트) — 차이점: Input Capacitance (Ciss), Package, Technology.
빠른 비교 도구 — 나란히 비교할 대체 부품을 선택하십시오:
TJ60S06M3L
✅ 드롭인✓ 재고 있음
$0.54 / 개
데이터시트 보기 →TJ60S06M3L(T6L1,NQ
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
TJ60S04M3L
✅ 드롭인 ⚠️ 사양 미검증📋 참조 대체품 (카탈로그에 없음)
TJ60S06M3LT6L1.NQ 최대 정격 & 전기적 특성
| Polarity | P-channel |
| Drain-Source Voltage (VDS) | -60 V |
| Gate-Source Voltage (VGS) | +10 V / -20 V |
| Continuous Drain Current (ID) at TC=25C | -60 A |
| Power Dissipation (PD) at TC=25C | 100 W |
| RDS(on) Max at VGS=-10V | 0.0112 ohm |
| Input Capacitance (Ciss) | 7760 pF |
| FET Type | MOSFET P-Channel, Metal Oxide |
| 실장 유형 | Surface Mount |
| 패키지 | DPAK+ (TO-252) |
| 동작 온도 | -55C to +150C (Tj) |
| Technology | Toshiba U-MOS (silicon) |
| MSL 레벨 | 1 (unlimited) |
| RoHS 상태 | Compliant |
| Automotive Qualified | Yes (per Toshiba product positioning) |
TJ60S06M3LT6L1.NQ 핀 구성
| 핀 1 | Gate — Gate control input; drive with 0 to -10V relative to source for P-channel operation |
| 핀 2 | Drain — Drain terminal; connected to load return path |
| 핀 3 | Source — Source terminal; reference point for gate drive and thermal pad |
| 핀 4 | Thermal Pad — Exposed thermal pad on underside; must be soldered to PCB copper for heatsinking |
안전 동작 영역 (DC) for TJ60S06M3L
일반적인 애플리케이션
TJ60S06M3LT6L1.NQ 적합 용도: 7 애플리케이션s: Automotive ECU Load Switching, Motor Driver H-Bridge High-Side Switch, Battery Management Reverse-Polarity Protection, Synchronous Rectifier in Isolated DC-DC Converters, Industrial 24V High-Side Load Management, USB-PD and Hot-Swap Protection Switch, Solar Charge Controller Blocking Diode Replacement.
Automotive ECU Load Switching
The TJ60S06M3L(T6L1,NQ suits 12V automotive ECU high-side load switching because of its -60V VDS rating providing ample avalanche margin against load-dump transients up to 35V, and its P-channel polarity which allows direct drive from a logic-level microcontroller GPIO without a charge pump. With RDS(on) of 11.2 milliohm at VGS=-10V, conduction loss at 20A load is only about 4.5W, manageable on a DPAK+ footprint with 1 square inch of copper. Compared to mechanical relays, this MOSFET offers silent switching, longer life, and finer PWM control for body-control modules and lighting drivers.
추천
Motor Driver H-Bridge High-Side Switch
In brushed-DC motor H-bridges, the TJ60S06M3L(T6L1,NQ serves as the high-side switch on each leg, with its P-channel polarity allowing the bridge to be driven directly from logic-level signals without bootstrap capacitors. The -60V rating easily handles the back-EMF spikes of 24V motors, while the 60A continuous rating supports motor currents up to 30A per phase with proper heatsinking. The low RDS(on) of 11.2 milliohm minimizes thermal dissipation during PWM operation, critical for continuous-duty industrial motor control where the high-side FET conducts for the majority of each PWM cycle.
추천
Battery Management Reverse-Polarity Protection
The TJ60S06M3L(T6L1,NQ is well suited for reverse-polarity protection (RPP) circuits in lithium-ion battery packs because its P-channel polarity naturally blocks current flow when the source is accidentally connected with reversed polarity. With -60V VDS and 60A current capability, the device can protect multi-cell battery packs up to 48V nominal without avalanche breakdown. The 11.2 milliohm RDS(on) keeps forward-path voltage drop below 50 mV at 5A charge current, preserving battery efficiency. Designers should add a TVS diode and adequate gate-bias network to ensure fast turn-off during fault events.
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Synchronous Rectifier in Isolated DC-DC Converters
As a synchronous rectifier on the secondary side of an isolated DC-DC converter, the TJ60S06M3L(T6L1,NQ replaces Schottky diodes and improves efficiency by 3-5 percentage points in 12V-output converters. Its P-channel configuration simplifies the gate-drive timing relative to the primary-side switch, and its 60V VDS rating easily handles the reflected voltage stress on the secondary winding. The 7760 pF Ciss is moderate, allowing clean switching transitions at 100-300 kHz without excessive drive losses. Compared to a 60V Schottky diode at 20A load, this MOSFET reduces rectifier losses from about 15W to under 5W.
추천
Industrial 24V High-Side Load Management
Industrial 24V systems benefit from the TJ60S06M3L(T6L1,NQ's -60V VDS rating which provides more than 2x safety margin over the 24V nominal bus, surviving inductive transients from solenoids, relays, and motor windings. The P-channel topology allows the load to be tied to ground, simplifying PCB layout and reducing ground-loop noise. With 60A continuous current, the device can switch entire subsystem power rails without paralleling. Designers should verify SOA at peak load conditions and provide adequate copper heatsinking on the DPAK+ thermal pad to keep junction temperature below 125C for long-term reliability.
추천
USB-PD and Hot-Swap Protection Switch
The TJ60S06M3L(T6L1,NQ is suitable for USB-PD and hot-swap applications where a P-channel high-side switch must isolate the load during fault events. Its low RDS(on) of 11.2 milliohm minimizes voltage drop on the 5V/9V/15V/20V USB-PD output rails, while the -60V VDS rating handles capacitive inrush transients from downstream bulk capacitors. The 7760 pF Ciss combined with a 10kohm gate resistor provides sufficient Miller immunity to prevent shoot-through during fast dV/dt events. Designers should add current-limit and OVP functions upstream for full USB-PD compliance.
추천
Solar Charge Controller Blocking Diode Replacement
In solar charge controllers, the TJ60S06M3L(T6L1,NQ replaces traditional Schottky blocking diodes to reduce forward-conduction losses and improve charge efficiency, particularly at high charge currents. Its P-channel polarity allows the MOSFET to be placed with source at the battery side and drain at the panel side, blocking reverse current flow at night with near-zero leakage. The 60V VDS rating handles 24V panel open-circuit voltage with margin, and the 100W power dissipation rating supports continuous charge currents up to 30A with proper PCB heatsinking on the DPAK+ footprint.
추천
추천 제품 요약
엔지니어링 참조 데이터: TJ60S06M3LT6L1.NQ — 비교, 설계 지침 및 규정 준수 정보.
선택 가이드
대체품과의 비교
| 파라미터 | 이 제품 | TJ60S06M3L | TJ60S06M3L(T6L1,NQ | TJ60S04M3L |
|---|---|---|---|---|
| Brand | Toshiba | Toshiba | Toshiba | Toshiba |
| Package | DPAK+ (TO-252) | DPAK+ (TO-252) - same | DPAK+ (TO-252) - same | DPAK+ (TO-252) - same |
| Polarity | P-channel | P-channel | P-channel | P-channel |
| Drain-Source Voltage (VDS) | -60 V | -60 V | -60 V | -40 V |
| Continuous Drain Current (ID) | -60 A | -60 A | -60 A | -60 A |
| Power Dissipation (PD) | 100 W | 100 W | 100 W | 100 W |
| Automotive Qualified | Yes (positioned) | Yes (positioned) | Yes (positioned) | Yes (positioned) |
주요 차별점
- U-MOS trench technology with ultra-low RDS(on) (vs IRFR9024N (Infineon/IR, -55V / -11A planar))
- Modern surface-mount DPAK+ footprint (vs TO-220 through-hole P-channel MOSFETs)
- P-channel topology eliminates charge pump (vs Equivalent N-channel high-side switch designs)
설계 노트
Estimated: At ID = 30 A and RDS(on) = 0.0112 ohm, conduction loss is approximately 10 W. The DPAK+ package requires a thermal pad soldered to at least 1 square inch of 2 oz copper to keep junction-to-ambient thermal resistance (theta_JA) around 50 C/W. Without adequate copper, junction temperature can exceed 150 C at high duty cycle, causing thermal shutdown or reliability degradation. Designers should consult the manufacturer datasheet for the official thermal-resistance curves and use multiple thermal vias under the exposed pad.
The gate-drive trace should be kept short and routed away from the drain node to minimize Miller-capacitance coupling, which can cause inadvertent turn-on during high dV/dt switching events. Add a 10 kohm gate-source resistor to discharge the gate capacitance during power-down and prevent floating-gate turn-on. Use a separate gate-driver IC or dedicated gate-drive circuit if switching above 100 kHz to ensure clean gate transitions. Per Toshiba application guidance, keep the source-kelvin connection short for accurate current sensing.
Do not exceed the absolute maximum VGS rating of +10 V / -20 V; even brief transients above this range can punch through the oxide layer and permanently damage the device. Verify that the upstream gate-driver supply cannot overshoot during power-up. For P-channel operation in high-side switch topology, ensure the gate is pulled to the source voltage (off state) during power-down to prevent back-feeding the load. Always check the SOA curve at peak transient conditions - sustained operation at low VDS and high ID will exceed thermal limits.
규정 준수 정보
RoHS compliant per Toshiba product page. AEC-Q100 positioning for automotive motor drivers, DC-DC converters, and switching voltage regulators. Halogen-free status not stated by Toshiba reference set; confirm via latest product datasheet.
