1EBN1001AEXUMA1 vs 2ED21064S06JXUMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci 1EBN1001AEXUMA1 disebabkan oleh Infineon dan 2ED21064S06JXUMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr 1EBN1001AEXUMA1 2ED21064S06JXUMA1
Merek Infineon Infineon
Kategori Power MOSFET Drivers Power MOSFET Drivers
Status Lingkungan Hidup Aktif Aktif
Product Type Isolated single-channel IGBT/MOSFET gate driver booster —
Series EiceDRIVER™ Boost (1EBN family) —
Configuration High-Side / Low-Side (non-inverting booster) Half-Bridge (2 outputs, non-inverting)
Bilangan Output 2 (separate source and sink paths) —
Peak Output Current ±15 A —
Number of Drivers 1 —
Input Signal ASC input, active-clamping disable —
Active Clamping Yes (very fast reaction time) —
Kemasan PG-DSO-14-43 (DSO EP, 14-pin, Tape & Reel) PG-DSO-14 (14-pin SOIC)
Jenis Pemasangan Surface Mount Surface Mount
Suhu Operasi -40 °C to +125 °C (automotive grade) -40C to +125C
Automotive Qualification AEC-Q100 qualified —
Aras MSL [DATA_NEEDED: MSL level] [DATA_NEEDED: MSL level]
Status RoHS Compliant ROHS3 Compliant
Target Switching Stage Motor drives > 10 kW (up to 400 A modules) —
Fungsi — High-Side and Low-Side Gate Driver
Tetstruktur — High-Side, Low-Side with integrated bootstrap diode
Maximum Offset / Boot Voltage — 650 V
Supply Voltage (VCC) — 10 V to 20 V
Source Current (typical) — 0.29 A
Sink Current (typical) — 0.7 A
Rise Time (typical) — [DATA_NEEDED: rise time]
Fall Time (typical) — [DATA_NEEDED: fall time]
Propagation Delay (typical) — 100 ns
Channel-to-Channel Delay Match — [DATA_NEEDED: channel-to-channel delay match]
Under-Voltage Lockout — Yes (both channels)
Bootstrap Diode — Integrated
Input Logic Compatibility — 3.3 V / 5 V CMOS
Negative Gate Drive Robustness — -0.7 V

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