1EBN1001AEXUMA1 vs 2ED21064S06JXUMA1 Karşılaştırma

Ayrıntılı yan yana karşılaştırma 1EBN1001AEXUMA1 tarafından Infineon ve 2ED21064S06JXUMA1 tarafından InfineonAnahtar özellikleri, elektriksel parametreleri, ambalajı, yaşam döngüsü durumu, fiyatlandırma ve mevcudiyeti karşılaştırarak tasarım gereksinimleriniz için en iyi bileşeni belirleyin.

Özellik Karşılaştırması

Parametre 1EBN1001AEXUMA1 2ED21064S06JXUMA1
Marka Infineon Infineon
Kategori Power MOSFET Drivers Power MOSFET Drivers
Yaşam Döngüsü Durumu Aktif Aktif
Product Type Isolated single-channel IGBT/MOSFET gate driver booster —
Series EiceDRIVER™ Boost (1EBN family) —
Configuration High-Side / Low-Side (non-inverting booster) Half-Bridge (2 outputs, non-inverting)
Çıkış Sayısı 2 (separate source and sink paths) —
Peak Output Current ±15 A —
Number of Drivers 1 —
Input Signal ASC input, active-clamping disable —
Active Clamping Yes (very fast reaction time) —
Paket PG-DSO-14-43 (DSO EP, 14-pin, Tape & Reel) PG-DSO-14 (14-pin SOIC)
Montaj Türü Surface Mount Surface Mount
İşletim Sıcaklığı -40 °C to +125 °C (automotive grade) -40C to +125C
Automotive Qualification AEC-Q100 qualified —
MSL Seviyesi [DATA_NEEDED: MSL level] [DATA_NEEDED: MSL level]
RoHS Durumu Compliant ROHS3 Compliant
Target Switching Stage Motor drives > 10 kW (up to 400 A modules) —
Fonksiyon — High-Side and Low-Side Gate Driver
Ağ Yapısı — High-Side, Low-Side with integrated bootstrap diode
Maximum Offset / Boot Voltage — 650 V
Supply Voltage (VCC) — 10 V to 20 V
Source Current (typical) — 0.29 A
Sink Current (typical) — 0.7 A
Rise Time (typical) — [DATA_NEEDED: rise time]
Fall Time (typical) — [DATA_NEEDED: fall time]
Propagation Delay (typical) — 100 ns
Channel-to-Channel Delay Match — [DATA_NEEDED: channel-to-channel delay match]
Under-Voltage Lockout — Yes (both channels)
Bootstrap Diode — Integrated
Input Logic Compatibility — 3.3 V / 5 V CMOS
Negative Gate Drive Robustness — -0.7 V

Dökümanlar & Kaynaklar

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