1EBN1001AEXUMA1 vs 2ED21064S06JXUMA1 比較

詳細並排比較 1EBN1001AEXUMA1 由 Infineon 與 2ED21064S06JXUMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
2ED21064S06JXUMA1 2ED21064S06JXUMA1 - 650V 0.7A Half-Bridge Gate Driver | Infineon

2ED21064S06JXUMA1 - 650V 0.7A Half-Bridge Gate Driver | Infineon

2ED21064S06JXUMA1 ✓ 啟用中

規格比較

參數 1EBN1001AEXUMA1 2ED21064S06JXUMA1
品牌 Infineon Infineon
類別 Power MOSFET Drivers Power MOSFET Drivers
生命週期狀態 啟用中 啟用中
Product Type Isolated single-channel IGBT/MOSFET gate driver booster —
Series EiceDRIVER™ Boost (1EBN family) —
Configuration High-Side / Low-Side (non-inverting booster) Half-Bridge (2 outputs, non-inverting)
輸出數量 2 (separate source and sink paths) —
Peak Output Current ±15 A —
Number of Drivers 1 —
Input Signal ASC input, active-clamping disable —
Active Clamping Yes (very fast reaction time) —
封裝 PG-DSO-14-43 (DSO EP, 14-pin, Tape & Reel) PG-DSO-14 (14-pin SOIC)
安裝類型 Surface Mount Surface Mount
工作溫度 -40 °C to +125 °C (automotive grade) -40C to +125C
Automotive Qualification AEC-Q100 qualified —
MSL 等級 [DATA_NEEDED: MSL level] [DATA_NEEDED: MSL level]
RoHS 狀態 Compliant ROHS3 Compliant
Target Switching Stage Motor drives > 10 kW (up to 400 A modules) —
功能 — High-Side and Low-Side Gate Driver
拓撲 — High-Side, Low-Side with integrated bootstrap diode
Maximum Offset / Boot Voltage — 650 V
Supply Voltage (VCC) — 10 V to 20 V
Source Current (typical) — 0.29 A
Sink Current (typical) — 0.7 A
Rise Time (typical) — [DATA_NEEDED: rise time]
Fall Time (typical) — [DATA_NEEDED: fall time]
Propagation Delay (typical) — 100 ns
Channel-to-Channel Delay Match — [DATA_NEEDED: channel-to-channel delay match]
Under-Voltage Lockout — Yes (both channels)
Bootstrap Diode — Integrated
Input Logic Compatibility — 3.3 V / 5 V CMOS
Negative Gate Drive Robustness — -0.7 V

資料表與資源

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