1ED3124MU12HXUMA1 vs 1EDN6550BXTSA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci 1ED3124MU12HXUMA1 disebabkan oleh Infineon dan 1EDN6550BXTSA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr 1ED3124MU12HXUMA1 1EDN6550BXTSA1
Merek Infineon Infineon
Kategori Power MOSFET Drivers Power MOSFET Drivers
Status Lingkungan Hidup Aktif Aktif
Product Type Single-channel isolated gate driver IC Single-channel gate driver IC
Manufacturer Family EiceDRIVER Compact 1ED31xxMU12H (X3 compact) —
Peak Output Current (source/sink) 14 A typical —
Konfigurasi Output Separate source and sink pins —
Galvanic Isolation (rms) 5.7 kV (UL 1577) —
Working Voltage (continuous) 1200 V —
Common-Mode Transient Immunity (CMTI) 200 kV/us minimum —
Propagation Delay (typ.) 90 ns —
UVLO Threshold 10.5 V —
Isolation Technology Coreless transformer (CT) —
Kemasan PG-DSO-8-66 (DSO-8 wide-body) PG-SOT23-6-3 (SOT-23-6)
Creepage Distance >8 mm —
Gambaran Suhu Operasi -40C to +125C —
Target Switch Types IGBT, power MOSFET, SiC MOSFET —
Recommended Switch Class Up to 2300 V IGBT / SiC modules —
Jenis Pemasangan Surface Mount Surface Mount
Aras MSL MSL2 (per JEDEC J-STD-020) [DATA_NEEDED: MSL level]
Status RoHS Compliant Compliant
Driver Configuration — High-Side / Low-Side, Non-Inverting
Bilangan Output — 1
Peak Source Current — 4 A
Peak Sink Current — 8 A
Minimum Pulse Width — 29 ns
Input Type — Differential (TTL-compatible)
Supply Voltage Range — [DATA_NEEDED: VCC range]
UVLO Protection — Yes (integrated)
Suhu Operasi — -40C to +125C
Kiraan Pin — 6

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