1EDN7126GXTMA1 vs 1EDN7136GXTMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci 1EDN7126GXTMA1 disebabkan oleh Infineon dan 1EDN7136GXTMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr 1EDN7126GXTMA1 1EDN7136GXTMA1
Merek Infineon Infineon
Kategori Power MOSFET Drivers Power MOSFET Drivers
Status Lingkungan Hidup Aktif Aktif
Fungsi Single-channel TDI gate driver for GaN HEMT and Si MOSFET —
Configuration Non-Inverting Single channel, non-inverting
Channel Type Single —
Driven Supply Voltage [DATA_NEEDED: VCC max value] —
Peak Source Current 1.5 A 4 A
Peak Sink Current 1.5 A 8 A
Common-Mode Voltage (CMR) 200 V —
Input Type Truly Differential Input (TDI) —
Propagation Delay (Typ.) [DATA_NEEDED: tpd typical value] —
Rise / Fall Time (Typ.) [DATA_NEEDED: tr / tf typical value] —
Gambaran Suhu Operasi -40C to +125C —
Kemasan PG-VSON-10-4 PG-VSON-10-4 (leadless, thermal pad)
Jenis Pemasangan Surface Mount Surface Mount
Aras MSL [DATA_NEEDED: MSL rating] [DATA_NEEDED: MSL level]
Status RoHS Compliant Compliant
Reach Compliant —
Lead-Free Yes —
Input Logic Compatibility 3.3 V / 5 V TTL/CMOS (TDI) —
Product Type — Low-side gate driver IC
Target Switch — GaN HEMT (CoolGaN) / MOSFET
Input Logic — TTL/CMOS compatible
UVLO — Yes (VDD under-voltage lockout)
Propagation Delay — Sub-nanosecond class
Suhu Operasi — -40 C to +125 C
Lead-free — Yes
Input Voltage (VDD) — [DATA_NEEDED: VDD range V]
Output Voltage (GaN gate) — Approximately 6 V (regulated)

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