1EDN7126GXTMA1 vs 1EDN7136GXTMA1 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng 1EDN7126GXTMA1 sa pamamagitan ng Infineon at 1EDN7136GXTMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Pagsanggunian na paghahambing

Parametro 1EDN7126GXTMA1 1EDN7136GXTMA1
Brand Infineon Infineon
Kategorya Power MOSFET Drivers Power MOSFET Drivers
Katayuan ng Lifecycle Aktibo Aktibo
Fungsi Single-channel TDI gate driver for GaN HEMT and Si MOSFET —
Configuration Non-Inverting Single channel, non-inverting
Channel Type Single —
Driven Supply Voltage [DATA_NEEDED: VCC max value] —
Peak Source Current 1.5 A 4 A
Peak Sink Current 1.5 A 8 A
Common-Mode Voltage (CMR) 200 V —
Input Type Truly Differential Input (TDI) —
Propagation Delay (Typ.) [DATA_NEEDED: tpd typical value] —
Rise / Fall Time (Typ.) [DATA_NEEDED: tr / tf typical value] —
Hanay ng Temperature na Operasyon -40C to +125C —
Packhaging PG-VSON-10-4 PG-VSON-10-4 (leadless, thermal pad)
Uri ng Pagpapasok Surface Mount Surface Mount
Level ng MSL [DATA_NEEDED: MSL rating] [DATA_NEEDED: MSL level]
Tindminan RoHS Compliant Compliant
Reach Compliant —
Lead-Free Yes —
Input Logic Compatibility 3.3 V / 5 V TTL/CMOS (TDI) —
Product Type — Low-side gate driver IC
Target Switch — GaN HEMT (CoolGaN) / MOSFET
Input Logic — TTL/CMOS compatible
UVLO — Yes (VDD under-voltage lockout)
Propagation Delay — Sub-nanosecond class
Temperature na Operasyon — -40 C to +125 C
Lead-free — Yes
Input Voltage (VDD) — [DATA_NEEDED: VDD range V]
Output Voltage (GaN gate) — Approximately 6 V (regulated)

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