1EDN7146GXTMA1 vs 1EDN7126GXTMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci 1EDN7146GXTMA1 disebabkan oleh Infineon dan 1EDN7126GXTMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | 1EDN7146GXTMA1 | 1EDN7126GXTMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | Power MOSFET Drivers | Power MOSFET Drivers |
| Status Lingkungan Hidup | Aktif | Aktif |
| Driver Type | High-side, single-channel | — |
| Number of Drivers | 1 | — |
| Logic Type | Non-Inverting | — |
| Input Type | TDI (Truly Differential Inductor) | Truly Differential Input (TDI) |
| Maximum Bootstrap Voltage (VB) | 200 V | — |
| Supply Voltage (VCC) | 4.5 V to 20 V | — |
| Source/Sink Drive Current | 500 mA / 500 mA | — |
| Gate Drive Voltage | Up to 11 V (typ) | — |
| Propagation Delay (typ) | 40 ns | — |
| Rise/Fall Time (typ) | [DATA_NEEDED: rise/fall time] | — |
| UVLO (VCC) | Yes | — |
| UVLO (VB) | Yes | — |
| Bootstrap Diode | Integrated | — |
| Suhu Operasi | -40 C to +125 C | — |
| Kemasan | PG-VSON-10-4 | PG-VSON-10-4 |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Status RoHS | Compliant | Compliant |
| Aras MSL | 1 | [DATA_NEEDED: MSL rating] |
| Fungsi | — | Single-channel TDI gate driver for GaN HEMT and Si MOSFET |
| Configuration | — | Non-Inverting |
| Channel Type | — | Single |
| Driven Supply Voltage | — | [DATA_NEEDED: VCC max value] |
| Peak Source Current | — | 1.5 A |
| Peak Sink Current | — | 1.5 A |
| Common-Mode Voltage (CMR) | — | 200 V |
| Propagation Delay (Typ.) | — | [DATA_NEEDED: tpd typical value] |
| Rise / Fall Time (Typ.) | — | [DATA_NEEDED: tr / tf typical value] |
| Gambaran Suhu Operasi | — | -40C to +125C |
| Reach | — | Compliant |
| Lead-Free | — | Yes |
| Input Logic Compatibility | — | 3.3 V / 5 V TTL/CMOS (TDI) |