1EDN7146GXTMA1 vs 1EDN7126GXTMA1 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng 1EDN7146GXTMA1 sa pamamagitan ng Infineon at 1EDN7126GXTMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Infineon
1EDN7146GXTMA1 1EDN7146GXTMA1 - 200V TDI Gate Driver IC | Infineon

1EDN7146GXTMA1 - 200V TDI Gate Driver IC | Infineon

1EDN7146GXTMA1 ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro 1EDN7146GXTMA1 1EDN7126GXTMA1
Brand Infineon Infineon
Kategorya Power MOSFET Drivers Power MOSFET Drivers
Katayuan ng Lifecycle Aktibo Aktibo
Driver Type High-side, single-channel —
Number of Drivers 1 —
Logic Type Non-Inverting —
Input Type TDI (Truly Differential Inductor) Truly Differential Input (TDI)
Maximum Bootstrap Voltage (VB) 200 V —
Supply Voltage (VCC) 4.5 V to 20 V —
Source/Sink Drive Current 500 mA / 500 mA —
Gate Drive Voltage Up to 11 V (typ) —
Propagation Delay (typ) 40 ns —
Rise/Fall Time (typ) [DATA_NEEDED: rise/fall time] —
UVLO (VCC) Yes —
UVLO (VB) Yes —
Bootstrap Diode Integrated —
Temperature na Operasyon -40 C to +125 C —
Packhaging PG-VSON-10-4 PG-VSON-10-4
Uri ng Pagpapasok Surface Mount Surface Mount
Tindminan RoHS Compliant Compliant
Level ng MSL 1 [DATA_NEEDED: MSL rating]
Fungsi — Single-channel TDI gate driver for GaN HEMT and Si MOSFET
Configuration — Non-Inverting
Channel Type — Single
Driven Supply Voltage — [DATA_NEEDED: VCC max value]
Peak Source Current — 1.5 A
Peak Sink Current — 1.5 A
Common-Mode Voltage (CMR) — 200 V
Propagation Delay (Typ.) — [DATA_NEEDED: tpd typical value]
Rise / Fall Time (Typ.) — [DATA_NEEDED: tr / tf typical value]
Hanay ng Temperature na Operasyon — -40C to +125C
Reach — Compliant
Lead-Free — Yes
Input Logic Compatibility — 3.3 V / 5 V TTL/CMOS (TDI)

Mga Datasheets at Resources

Tingnan ang Lahat ng mga Produkto Lumikha ng BOM Hilingin ang Kita