1EDN7146UXTSA1 vs 2EDL8034G4CXTMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci 1EDN7146UXTSA1 disebabkan oleh Infineon dan 2EDL8034G4CXTMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | 1EDN7146UXTSA1 | 2EDL8034G4CXTMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | Power MOSFET Drivers | Power MOSFET Drivers |
| Status Lingkungan Hidup | Aktif | Aktif |
| Driver Type | Single-channel high-side TDI gate driver | Half-Bridge (High-Side / Low-Side) |
| Maximum Blocking Voltage | 200 V | — |
| Input Configuration | Truly differential (TDI) | — |
| Output Current (Source / Sink) | 1.5 A / 2.5 A | — |
| Propagation Delay | [DATA_NEEDED: typical propagation delay ns] | — |
| Masa Pertambahan | [DATA_NEEDED: typical rise time ns] | — |
| Masa jatuh | [DATA_NEEDED: typical fall time ns] | — |
| Supply Voltage (VCC) | [DATA_NEEDED: VCC range V] | — |
| Gambaran Suhu Operasi | -40C to +125C | — |
| Kemasan | PG-VSON-1 (6-pin with exposed pad) | PG-VDSON-10-2 (DSN-10) with exposed pad |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Target Transistor | GaN SG HEMT or power MOSFET | — |
| Aras MSL | [DATA_NEEDED: MSL rating] | [DATA_NEEDED: MSL level] |
| Status RoHS | Compliant | — |
| Topology Support | Half-bridge, low-side, high-side | — |
| Configuration | — | Non-Inverting |
| Bootstrap Voltage (Max) | — | 120 V |
| Peak Source Current | — | 3 A |
| Peak Sink Current | — | 4 A |
| Bilangan Output | — | 2 |
| Rise Time (Typical) | — | [DATA_NEEDED: rise time ns] |
| Fall Time (Typical) | — | [DATA_NEEDED: fall time ns] |
| Propagation Delay (Typical) | — | [DATA_NEEDED: propagation delay ns] |
| Input Logic Compatibility | — | 3.3 V / 5 V |
| VCC Supply Voltage | — | [DATA_NEEDED: VCC range V] |
| UVLO Protection | — | Yes (VCC and VBS) |
| Isolation Type | — | Junction-isolated (level-shifted) |
| ESD Rating (HBM) | — | [DATA_NEEDED: ESD HBM kV] |
| Suhu Hubungan Operasi | — | -40 C to +125 C |
| Lead-Free / RoHS | — | Yes (per Infineon product page) |