1N5711SB vs 1N5711 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci 1N5711SB disebabkan oleh STMicroelectronics dan 1N5711 disebabkan oleh STMicroelectronics. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | 1N5711SB | 1N5711 |
|---|---|---|
| Merek | STMicroelectronics | STMicroelectronics |
| Kategori | Diodes | Diodes |
| Status Lingkungan Hidup | Aktif | Aktif |
| Diode Type | Small Signal Schottky Barrier Diode | Small-signal Schottky barrier (RF) diode |
| Peak Reverse Voltage (VRRM) | 70 V | 70 V |
| Average Forward Current (IF(AV)) | 15 mA | — |
| Power Dissipation | 430 mW | 430 mW |
| Forward Voltage (VF) | [DATA_NEEDED: forward voltage at rated current] | 0.41 V (at 1 mA, per MACOM) |
| Reverse Current (IR) | [DATA_NEEDED: reverse current at rated VR] | — |
| Junction Capacitance (Cj) | [DATA_NEEDED: junction capacitance] | 1 pF |
| Reverse Recovery Time | Ultrafast (Schottky, no stored charge) | — |
| Configuration | Single | — |
| Kemasan | DO-35 (SOD-27) hermetic glass axial | DO-35 (DO-204AH) hermetic axial-lead glass |
| Jenis Pemasangan | Through Hole | Through-Hole |
| Junction Material | Metal-to-silicon junction | — |
| Primary Applications | UHF/VHF detection, mixing, switching, pulse shaping | — |
| Suhu Operasi | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: operating temperature range] |
| Status RoHS | [DATA_NEEDED: RoHS compliance status] | Compliant |
| Matched Batches | Available on request (ST) | — |
| Continuous Forward Current (IF) | — | 15 mA |
| Total Capacitance | — | 2 pF |
| Dynamic Resistance | — | 35 ohm |
| Breakdown Voltage (VB) | — | 70 V |
| Switching Speed | — | Picosecond class (ultrafast, no minority-carrier storage) |
| Junction Structure | — | Metal-to-silicon junction with PN guard ring |
| Reverse Leakage Current | — | [DATA_NEEDED: reverse leakage current at rated VR] |