1N5711SB vs 1N5711 比較
詳細並排比較 1N5711SB 由 STMicroelectronics 與 1N5711 由 STMicroelectronics. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | 1N5711SB | 1N5711 |
|---|---|---|
| 品牌 | STMicroelectronics | STMicroelectronics |
| 類別 | Diodes | Diodes |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Diode Type | Small Signal Schottky Barrier Diode | Small-signal Schottky barrier (RF) diode |
| Peak Reverse Voltage (VRRM) | 70 V | 70 V |
| Average Forward Current (IF(AV)) | 15 mA | — |
| Power Dissipation | 430 mW | 430 mW |
| Forward Voltage (VF) | [DATA_NEEDED: forward voltage at rated current] | 0.41 V (at 1 mA, per MACOM) |
| Reverse Current (IR) | [DATA_NEEDED: reverse current at rated VR] | — |
| Junction Capacitance (Cj) | [DATA_NEEDED: junction capacitance] | 1 pF |
| Reverse Recovery Time | Ultrafast (Schottky, no stored charge) | — |
| Configuration | Single | — |
| 封裝 | DO-35 (SOD-27) hermetic glass axial | DO-35 (DO-204AH) hermetic axial-lead glass |
| 安裝類型 | Through Hole | Through-Hole |
| Junction Material | Metal-to-silicon junction | — |
| Primary Applications | UHF/VHF detection, mixing, switching, pulse shaping | — |
| 工作溫度 | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: operating temperature range] |
| RoHS 狀態 | [DATA_NEEDED: RoHS compliance status] | Compliant |
| Matched Batches | Available on request (ST) | — |
| Continuous Forward Current (IF) | — | 15 mA |
| Total Capacitance | — | 2 pF |
| Dynamic Resistance | — | 35 ohm |
| Breakdown Voltage (VB) | — | 70 V |
| Switching Speed | — | Picosecond class (ultrafast, no minority-carrier storage) |
| Junction Structure | — | Metal-to-silicon junction with PN guard ring |
| Reverse Leakage Current | — | [DATA_NEEDED: reverse leakage current at rated VR] |