2N7002H6327XTSA2 vs 2N7002-7-F Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci 2N7002H6327XTSA2 disebabkan oleh Infineon dan 2N7002-7-F disebabkan oleh Diodes Incorporated. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Diodes Incorporated
2N7002-7-F - 60V N-Ch Enhancement MOSFET SOT-23 | Diodes Incorporated
2N7002-7-F ✓ AktifPengandingan Spesifikasi
| Parametr | 2N7002H6327XTSA2 | 2N7002-7-F |
|---|---|---|
| Merek | Infineon | Diodes Incorporated |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Jenis Transistor | N-Channel MOSFET | N-Channel Enhancement-Mode MOSFET |
| Technology | OptiMOS (Planar) | Trench MOSFET |
| Drain-Source Voltage (VDS) | 60 V | — |
| Continuous Drain Current (ID) | 300 mA (Ta) | — |
| Power Dissipation (PD) | 500 mW (Ta) | — |
| On-State Resistance (RDS(on)) | 3 ohm max @ VGS = 10 V | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical value] | [DATA_NEEDED: VGS(th) typical value] |
| Gate Charge (Qg) | [DATA_NEEDED: Qg total] | [DATA_NEEDED: total gate charge typical] |
| Input Capacitance (Ciss) | [DATA_NEEDED: Ciss] | [DATA_NEEDED: Ciss typical] |
| Gambaran Suhu Operasi | -55C to +150C (Tj) | [DATA_NEEDED: Tj / TA operating range] |
| Kemasan | PG-SOT23 (SOT-23-3) | SOT-23-3 (TO-236) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Channel Mode | Enhancement | Enhancement |
| Aras MSL | 1 (per JEDEC J-STD-020) | — |
| Status RoHS | Compliant | Compliant |
| Lead-Free | Yes | — |
| Qualification | Industrial / Commercial Grade | — |
| Drain-Source Voltage (VDS max) | — | 60 V |
| Continuous Drain Current (ID) at Ta | — | 115 mA |
| Continuous Drain Current Range (per Mouser listing) | — | 105 mA to 210 mA |
| Power Dissipation (PD) at Ta | — | 370 mW |
| On-Resistance RDS(on) | — | 7.5 ohm to 13.5 ohm |
| Gate-Source Voltage (VGS) | — | +/-20 V |
| Terminal Finish | — | Matte tin (solderable per MIL-STD-202, method 208) |