2N7002H6327XTSA2 vs 2N7002-7-F 比較
詳細並排比較 2N7002H6327XTSA2 由 Infineon 與 2N7002-7-F 由 Diodes Incorporated. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
Diodes Incorporated
2N7002-7-F - 60V N-Ch Enhancement MOSFET SOT-23 | Diodes Incorporated
2N7002-7-F ✓ 啟用中規格比較
| 參數 | 2N7002H6327XTSA2 | 2N7002-7-F |
|---|---|---|
| 品牌 | Infineon | Diodes Incorporated |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| 電晶體類型 | N-Channel MOSFET | N-Channel Enhancement-Mode MOSFET |
| Technology | OptiMOS (Planar) | Trench MOSFET |
| Drain-Source Voltage (VDS) | 60 V | — |
| Continuous Drain Current (ID) | 300 mA (Ta) | — |
| Power Dissipation (PD) | 500 mW (Ta) | — |
| On-State Resistance (RDS(on)) | 3 ohm max @ VGS = 10 V | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical value] | [DATA_NEEDED: VGS(th) typical value] |
| Gate Charge (Qg) | [DATA_NEEDED: Qg total] | [DATA_NEEDED: total gate charge typical] |
| Input Capacitance (Ciss) | [DATA_NEEDED: Ciss] | [DATA_NEEDED: Ciss typical] |
| 工作溫度範圍 | -55C to +150C (Tj) | [DATA_NEEDED: Tj / TA operating range] |
| 封裝 | PG-SOT23 (SOT-23-3) | SOT-23-3 (TO-236) |
| 安裝類型 | Surface Mount | Surface Mount |
| Channel Mode | Enhancement | Enhancement |
| MSL 等級 | 1 (per JEDEC J-STD-020) | — |
| RoHS 狀態 | Compliant | Compliant |
| Lead-Free | Yes | — |
| Qualification | Industrial / Commercial Grade | — |
| Drain-Source Voltage (VDS max) | — | 60 V |
| Continuous Drain Current (ID) at Ta | — | 115 mA |
| Continuous Drain Current Range (per Mouser listing) | — | 105 mA to 210 mA |
| Power Dissipation (PD) at Ta | — | 370 mW |
| On-Resistance RDS(on) | — | 7.5 ohm to 13.5 ohm |
| Gate-Source Voltage (VGS) | — | +/-20 V |
| Terminal Finish | — | Matte tin (solderable per MIL-STD-202, method 208) |