AS4C512M16D4A-62BCN vs H5AN8G6NDJR-UHC Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci AS4C512M16D4A-62BCN disebabkan oleh Alliance Memory dan H5AN8G6NDJR-UHC disebabkan oleh SK hynix. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Alliance Memory
AS4C512M16D4A-62BCN - 8Gb DDR4 SDRAM 512Mx16 | Alliance Memory
AS4C512M16D4A-62BCN ✓ AktifPengandingan Spesifikasi
| Parametr | AS4C512M16D4A-62BCN | H5AN8G6NDJR-UHC |
|---|---|---|
| Merek | Alliance Memory | SK hynix |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Jenis Ingatan | DDR4 SDRAM | DDR4 SDRAM |
| Saiz Ingatan | 8 Gbit | — |
| Organisasi | 512M x 16 | 512M x 16 |
| Tegangan Pemberi Arus | 1.2 V | — |
| Kadar Data | 1600 MHz (3200 Mbps) | — |
| Latensi CAS | 18 ns | — |
| Kemasan | 96-FBGA (7.5x13 mm) | FBGA-96 (13x7.5 mm) |
| Suhu Operasi | 0°C to 95°C | — |
| Jenis Pemasangan | Surface Mount | — |
| JEDEC Standard | Compliant | — |
| Antaramuka | POD (Pseudo Open Drain) | — |
| Refresh | Auto-refresh and self-refresh | — |
| On-Die Termination | Yes | — |
| Status RoHS | Compliant | — |
| Packaging | Tray | — |
| Density | — | 8 Gb |
| Speed Grade | — | 3200 Mbps (PC4-25600) |
| Supply Voltage (VDD) | — | 1.2 V |
| Supply Voltage (VDDQ) | — | 1.2 V |
| Number of Terminals | — | 96 |
| Package Shape | — | RECTANGULAR |
| JESD-30 Code | — | R-PBGA-B96 |
| Maximum Operating Temperature | — | 85 °C |
| Minimum Operating Temperature | — | 0 °C |
| RoHS | — | Compliant |
| Lead-Free | — | Yes |
| Boson Bebas | — | Yes |
| Additional Features | — | Auto/Self Refresh, Auto Precharge, Asynchronous Reset, Data Mask, Dynamic ODT, ZQ Calibration, CRC, Write Leveling |