ATSAMG53N19A-AU vs ATSAMG55J19A-AU Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci ATSAMG53N19A-AU disebabkan oleh Microchip Technology dan ATSAMG55J19A-AU disebabkan oleh Microchip Technology. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Microchip Technology
ATSAMG53N19A-AU ATSAMG53N19A-AU - ARM Cortex-M4 48MHz MCU | Microchip

ATSAMG53N19A-AU - ARM Cortex-M4 48MHz MCU | Microchip

ATSAMG53N19A-AU ✓ Aktif
Microchip Technology
ATSAMG55J19A-AU ATSAMG55J19A-AU - 120MHz Cortex-M4 MCU 512KB Flash | Microchip

ATSAMG55J19A-AU - 120MHz Cortex-M4 MCU 512KB Flash | Microchip

ATSAMG55J19A-AU ✓ Aktif

Pengandingan Spesifikasi

Parametr ATSAMG53N19A-AU ATSAMG55J19A-AU
Merek Microchip Technology Microchip Technology
Kategori Microcontrollers Microcontrollers
Status Lingkungan Hidup Aktif Aktif
Core Architecture ARM Cortex-M4 with FPU ARM Cortex-M4 with FPU
Core Clock Speed 48 MHz —
Bit Width 32-bit —
Program Memory (Flash) 512 KB (512K x 8) —
RAM 96 KB —
Tegangan Pemberi Arus 1.5 V to 3.6 V —
Suhu Operasi -40 C to +85 C (Industrial) -40 C to +85 C (industrial)
Kemasan LQFP-100 (14x14 mm) 64-LQFP (10x10 mm)
GPIO Count Up to 38 —
ADC 12-bit, up to 1 MSPS 12-bit SAR
USB USB 2.0 Full-Speed device with on-chip transceiver USB 2.0 Full-Speed device/host
Communication Peripherals USART/UART/SPI/TWI/I2C USART/UART, SPI, TWI (I2C), I2S, HS USB
Oscillator Internal 8 MHz, external 32.768 kHz RTC crystal support —
Jenis Pemasangan Surface Mount Surface Mount
Aras MSL 3 (per industry standard) —
Status RoHS Compliant Compliant
Core Clock Speed (max) — 120 MHz
Instruction Set — 32-bit RISC + DSP extensions + FPU (single-precision)
Program Flash Memory — 512 KB (512K x 8)
SRAM (Total) — 160 KB
Backup SRAM with Retention — 16 KB (retained in deep sleep)
Supply Voltage (VDDIO/VDDCORE) — 1.62 V to 3.6 V
Audio Interface — I2S with PDM/TDM and sample-rate converter
External Bus Interface (EBI) — Yes (for SRAM/SDRAM/NOR Flash expansion)
Active Power Consumption — Down to 100 uA/MHz
Deep Sleep Current — Below 7 uA with SRAM retention
Wake-up Time (deep sleep to first instruction) — Down to 3 us
Lifecycle / New Design Recommendation — Active (new designs: consider ATSAMG55J19B Revision B)

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