ATSAMG53N19A-AU vs ATSAMG55J19A-AU Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng ATSAMG53N19A-AU sa pamamagitan ng Microchip Technology at ATSAMG55J19A-AU sa pamamagitan ng Microchip Technology. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Microchip Technology
ATSAMG53N19A-AU - ARM Cortex-M4 48MHz MCU | Microchip
ATSAMG53N19A-AU ✓ NakahandaMicrochip Technology
ATSAMG55J19A-AU - 120MHz Cortex-M4 MCU 512KB Flash | Microchip
ATSAMG55J19A-AU ✓ NakahandaPagsanggunian na paghahambing
| Parametro | ATSAMG53N19A-AU | ATSAMG55J19A-AU |
|---|---|---|
| Brand | Microchip Technology | Microchip Technology |
| Kategorya | Microcontrollers | Microcontrollers |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Core Architecture | ARM Cortex-M4 with FPU | ARM Cortex-M4 with FPU |
| Core Clock Speed | 48 MHz | — |
| Bit Width | 32-bit | — |
| Program Memory (Flash) | 512 KB (512K x 8) | — |
| RAM | 96 KB | — |
| Volte ng Pagbibigay | 1.5 V to 3.6 V | — |
| Temperature na Operasyon | -40 C to +85 C (Industrial) | -40 C to +85 C (industrial) |
| Packhaging | LQFP-100 (14x14 mm) | 64-LQFP (10x10 mm) |
| GPIO Count | Up to 38 | — |
| ADC | 12-bit, up to 1 MSPS | 12-bit SAR |
| USB | USB 2.0 Full-Speed device with on-chip transceiver | USB 2.0 Full-Speed device/host |
| Communication Peripherals | USART/UART/SPI/TWI/I2C | USART/UART, SPI, TWI (I2C), I2S, HS USB |
| Oscillator | Internal 8 MHz, external 32.768 kHz RTC crystal support | — |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Level ng MSL | 3 (per industry standard) | — |
| Tindminan RoHS | Compliant | Compliant |
| Core Clock Speed (max) | — | 120 MHz |
| Instruction Set | — | 32-bit RISC + DSP extensions + FPU (single-precision) |
| Program Flash Memory | — | 512 KB (512K x 8) |
| SRAM (Total) | — | 160 KB |
| Backup SRAM with Retention | — | 16 KB (retained in deep sleep) |
| Supply Voltage (VDDIO/VDDCORE) | — | 1.62 V to 3.6 V |
| Audio Interface | — | I2S with PDM/TDM and sample-rate converter |
| External Bus Interface (EBI) | — | Yes (for SRAM/SDRAM/NOR Flash expansion) |
| Active Power Consumption | — | Down to 100 uA/MHz |
| Deep Sleep Current | — | Below 7 uA with SRAM retention |
| Wake-up Time (deep sleep to first instruction) | — | Down to 3 us |
| Lifecycle / New Design Recommendation | — | Active (new designs: consider ATSAMG55J19B Revision B) |