BGA7L1N6E6327XT vs BGA7L1N6E6327XTSA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci BGA7L1N6E6327XT disebabkan oleh Infineon dan BGA7L1N6E6327XTSA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | BGA7L1N6E6327XT | BGA7L1N6E6327XTSA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | RF Amplifiers | RF Amplifiers |
| Status Lingkungan Hidup | Aktif | Aktif |
| Type | Low Noise Amplifier (LNA) MMIC | — |
| Technology | Silicon Germanium (SiGe) | Silicon Germanium (SiGe) |
| Frequency Range | 728 MHz to 960 MHz | 728 MHz to 960 MHz |
| Insertion Power Gain | 13.3 dB | 13.3 dB (typical) |
| Noise Figure (NF) | 0.90 dB | — |
| Tegangan Pemberi Arus | 1.5 V to 3.3 V | 1.5 V to 3.3 V |
| Arus Pemberi Arus | 4.4 mA (typical) | 4.4 mA (typical) |
| Control Logic | Digital on/off switch, 1 V logic level | Digital on/off switch, 1 V logic-high enable |
| Kemasan | TSNP-6-2 (leadless) | TSNP-6-2 (PG-TSNP-6-2), 0.7 mm x 1.1 mm |
| Package Footprint | 0.7 mm x 1.1 mm | — |
| Gambaran Suhu Operasi | -40C to +85C | — |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Tetstruktur | Single-stage with on-chip matching and bypass | — |
| Application Band | LTE Band 8 / 12 / 13 / 20 (sub-1 GHz) | — |
| Status RoHS | Compliant | Compliant |
| Manufacturer | — | Infineon Technologies |
| Part Number | — | BGA7L1N6E6327XTSA1 |
| Fungsi | — | RF Low Noise Amplifier (LNA) MMIC |
| Noise Figure | — | 0.90 dB (typical) |
| Input/Output Impedance | — | Internally matched to 50 ohm |
| Suhu Operasi | — | -40 C to +85 C |
| Standard Pack Quantity | — | 15,000 (reel) |
| Target Application | — | LTE low-band (700/800/900 MHz) receiver front-end |