BGA7L1N6E6327XT vs BGA7L1N6E6327XTSA1 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng BGA7L1N6E6327XT sa pamamagitan ng Infineon at BGA7L1N6E6327XTSA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Infineon
BGA7L1N6E6327XTSA1 BGA7L1N6E6327XTSA1 - 728-960MHz LTE LNA, 0.9dB NF | Infineon

BGA7L1N6E6327XTSA1 - 728-960MHz LTE LNA, 0.9dB NF | Infineon

BGA7L1N6E6327XTSA1 ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro BGA7L1N6E6327XT BGA7L1N6E6327XTSA1
Brand Infineon Infineon
Kategorya RF Amplifiers RF Amplifiers
Katayuan ng Lifecycle Aktibo Aktibo
Type Low Noise Amplifier (LNA) MMIC —
Technology Silicon Germanium (SiGe) Silicon Germanium (SiGe)
Frequency Range 728 MHz to 960 MHz 728 MHz to 960 MHz
Insertion Power Gain 13.3 dB 13.3 dB (typical)
Noise Figure (NF) 0.90 dB —
Volte ng Pagbibigay 1.5 V to 3.3 V 1.5 V to 3.3 V
Kuru-kuryente ng Pagbibigay 4.4 mA (typical) 4.4 mA (typical)
Control Logic Digital on/off switch, 1 V logic level Digital on/off switch, 1 V logic-high enable
Packhaging TSNP-6-2 (leadless) TSNP-6-2 (PG-TSNP-6-2), 0.7 mm x 1.1 mm
Package Footprint 0.7 mm x 1.1 mm —
Hanay ng Temperature na Operasyon -40C to +85C —
Uri ng Pagpapasok Surface Mount Surface Mount
Topolohiya Single-stage with on-chip matching and bypass —
Application Band LTE Band 8 / 12 / 13 / 20 (sub-1 GHz) —
Tindminan RoHS Compliant Compliant
Manufacturer — Infineon Technologies
Part Number — BGA7L1N6E6327XTSA1
Fungsi — RF Low Noise Amplifier (LNA) MMIC
Noise Figure — 0.90 dB (typical)
Input/Output Impedance — Internally matched to 50 ohm
Temperature na Operasyon — -40 C to +85 C
Standard Pack Quantity — 15,000 (reel)
Target Application — LTE low-band (700/800/900 MHz) receiver front-end

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