BSC010NE2LSIATMA1 vs BSC014N04LSIATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci BSC010NE2LSIATMA1 disebabkan oleh Infineon dan BSC014N04LSIATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Infineon
BSC014N04LSIATMA1 BSC014N04LSIATMA1 - 40V 100A OptiMOS N-FET | Infineon

BSC014N04LSIATMA1 - 40V 100A OptiMOS N-FET | Infineon

BSC014N04LSIATMA1 ✓ Aktif

Pengandingan Spesifikasi

Parametr BSC010NE2LSIATMA1 BSC014N04LSIATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies —
Series / Family OptiMOS 25V —
Jenis Transistor N-Channel MOSFET —
Drain-Source Voltage (VDS) 25 V 40 V
Continuous Drain Current (ID) at TA 38 A —
Continuous Drain Current (ID) at TC 100 A —
Power Dissipation (PD) at TA 2.5 W —
Power Dissipation (PD) at TC 96 W —
Kemasan PG-TDSON-8-7 (TDSON-8 EP) PG-TDSON-8 FL (TDSON-8 with exposed drain pad)
Jenis Pemasangan Surface Mount Surface Mount
Configuration Single N-Channel —
Technology OptiMOS (Trench) OptiMOS 5 (trench, thin-wafer)
Gambaran Suhu Operasi -55C to +150C (TJ) -55 C to +150 C
Kiraan Pin 8 —
Status RoHS Compliant Compliant
Gate Drive Logic-level compatible —
Aras MSL [DATA_NEEDED: MSL rating] 1 (per JEDEC J-STD-020)
Rds(on) at 10V [DATA_NEEDED: Rds(on) at VGS=10V] —
Rds(on) at 4.5V [DATA_NEEDED: Rds(on) at VGS=4.5V] —
Gate Charge (Qg) [DATA_NEEDED: total gate charge] —
FET Type — N-Channel
Continuous Drain Current (ID, Tc) — 100 A
Continuous Drain Current (ID, Ta) — 31 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed IDM rating]
RDS(on) max at VGS=10 V — 1.4 mOhm
Gate-Source Voltage (VGS) max — [DATA_NEEDED: VGS absolute maximum]
Gate Threshold Voltage (VGS(th) typ) — [DATA_NEEDED: VGS(th) typical]
Power Dissipation (PD, Tc) — 96 W
Power Dissipation (PD, Ta) — 2.5 W
Tradename — OptiMOS

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