BSC010NE2LSIATMA1 vs BSC014N04LSIATMA1 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng BSC010NE2LSIATMA1 sa pamamagitan ng Infineon at BSC014N04LSIATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Infineon
BSC010NE2LSIATMA1 BSC010NE2LSIATMA1 - 25V 100A N-Ch OptiMOS MOSFET | Infineon

BSC010NE2LSIATMA1 - 25V 100A N-Ch OptiMOS MOSFET | Infineon

BSC010NE2LSIATMA1 ✓ Nakahanda
Infineon
BSC014N04LSIATMA1 BSC014N04LSIATMA1 - 40V 100A OptiMOS N-FET | Infineon

BSC014N04LSIATMA1 - 40V 100A OptiMOS N-FET | Infineon

BSC014N04LSIATMA1 ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro BSC010NE2LSIATMA1 BSC014N04LSIATMA1
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Manufacturer Infineon Technologies —
Series / Family OptiMOS 25V —
Uri ng Transistor N-Channel MOSFET —
Drain-Source Voltage (VDS) 25 V 40 V
Continuous Drain Current (ID) at TA 38 A —
Continuous Drain Current (ID) at TC 100 A —
Power Dissipation (PD) at TA 2.5 W —
Power Dissipation (PD) at TC 96 W —
Packhaging PG-TDSON-8-7 (TDSON-8 EP) PG-TDSON-8 FL (TDSON-8 with exposed drain pad)
Uri ng Pagpapasok Surface Mount Surface Mount
Configuration Single N-Channel —
Technology OptiMOS (Trench) OptiMOS 5 (trench, thin-wafer)
Hanay ng Temperature na Operasyon -55C to +150C (TJ) -55 C to +150 C
Bilang ng Pin 8 —
Tindminan RoHS Compliant Compliant
Gate Drive Logic-level compatible —
Level ng MSL [DATA_NEEDED: MSL rating] 1 (per JEDEC J-STD-020)
Rds(on) at 10V [DATA_NEEDED: Rds(on) at VGS=10V] —
Rds(on) at 4.5V [DATA_NEEDED: Rds(on) at VGS=4.5V] —
Gate Charge (Qg) [DATA_NEEDED: total gate charge] —
FET Type — N-Channel
Continuous Drain Current (ID, Tc) — 100 A
Continuous Drain Current (ID, Ta) — 31 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed IDM rating]
RDS(on) max at VGS=10 V — 1.4 mOhm
Gate-Source Voltage (VGS) max — [DATA_NEEDED: VGS absolute maximum]
Gate Threshold Voltage (VGS(th) typ) — [DATA_NEEDED: VGS(th) typical]
Power Dissipation (PD, Tc) — 96 W
Power Dissipation (PD, Ta) — 2.5 W
Tradename — OptiMOS

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