BSC027N04LSGATMA1 vs IPB017N10N5LFATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci BSC027N04LSGATMA1 disebabkan oleh Infineon dan IPB017N10N5LFATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr BSC027N04LSGATMA1 IPB017N10N5LFATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS 3 —
Jenis Transistor N-Channel MOSFET —
Drain-Source Voltage (VDS) 40 V 100 V
Gate-Source Voltage (VGS) max ±20 V —
Continuous Drain Current (ID) at Ta=25°C 24 A —
Continuous Drain Current (ID) at Tc=25°C 100 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] [DATA_NEEDED: IDM]
On-Resistance RDS(on) max @ VGS=10V 2.7 mΩ —
Power Dissipation (Ta=25°C) 2.5 W —
Pembuangan Kuasa (TC=25°C) 83 W —
Gambaran Suhu Operasi -55°C to +150°C -55C to +175C (junction)
Kemasan PG-TDSON-8-1 (SuperSO8 5x6) —
Jenis Pemasangan Surface Mount Surface Mount
Technology OptiMOS 3 (Trench) MOSFET (Metal Oxide Semiconductor)
Aras MSL 1 1 (unlimited)
Status RoHS Compliant Compliant
Boson Bebas Yes —
Series — OptiMOS 5 Linear FET
FET Type — N-Channel
Continuous Drain Current (ID) @ TC=25C — 180 A
Continuous Drain Current (ID) @ TC=100C — [DATA_NEEDED: ID at TC=100C]
Maximum Power Dissipation (PD) @ TC=25C — 313 W
Drain-Source On-Resistance (RDS(on)) @ VGS=10V — 1.7 mΩ (max)
Gate-Source Voltage (VGS) Max — ±20 V
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th)]
Kemasan / Case — PG-TO263-7 (D2PAK-7), surface mount
Avalanche Rated — Yes
Linear-Mode (SOA) Optimized — Yes (OptiMOS Linear FET)

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