BSC027N06LS5ATMA1 vs IPG20N10S4L35ATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci BSC027N06LS5ATMA1 disebabkan oleh Infineon dan IPG20N10S4L35ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Infineon
BSC027N06LS5ATMA1 BSC027N06LS5ATMA1 - 60V 2.7mOhm N-Ch OptiMOS 5 | Infineon

BSC027N06LS5ATMA1 - 60V 2.7mOhm N-Ch OptiMOS 5 | Infineon

BSC027N06LS5ATMA1 ✓ Aktif
Infineon
IPG20N10S4L35ATMA1 IPG20N10S4L35ATMA1 - 100V Dual N-Ch MOSFET, 35mΩ | Infineon

IPG20N10S4L35ATMA1 - 100V Dual N-Ch MOSFET, 35mΩ | Infineon

IPG20N10S4L35ATMA1 ✓ Aktif

Pengandingan Spesifikasi

Parametr BSC027N06LS5ATMA1 IPG20N10S4L35ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Series OptiMOS™ 5 OptiMOS™, Automotive
Part Status Active —
FET Type N-Channel 2 N-Channel (Dual)
Technology MOSFET (Metal Oxide) —
Drain-Source Voltage (VDS) 60 V —
Gate-Source Voltage (VGS) ±20 V —
Gate Threshold Voltage (VGS(th)) Logic-level —
Continuous Drain Current (ID) at Tc=25°C 100 A —
Continuous Drain Current (ID) at Tc=100°C [DATA_NEEDED: ID at Tc=100C] —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed IDM] —
On-Resistance (RDS(on)) max @ VGS=10V 2.7 mOhm —
On-Resistance (RDS(on)) @ VGS=4.5V [DATA_NEEDED: RDS(on) at 4.5V] —
Power Dissipation (PD) at Tc=25°C 83 W —
Gambaran Suhu Operasi -55°C to +150°C —
Kemasan / Case PG-TDSON-8-7 (SuperSO8 5x6) PG-TDSON-8-4 (8-Pin TDSON EP)
Jenis Pemasangan Surface Mount Surface Mount
Kiraan Pin 8 —
Gate Charge (Qg) [DATA_NEEDED: total Qg] —
Avalanche Energy Rated Yes —
Status RoHS Compliant Compliant (Green Product)
MSL (Moisture Sensitivity Level) MSL1 —
Part Number — IPG20N10S4L35ATMA1
FET Feature — Logic Level Gate
Drain-to-Source Voltage (V<sub>DSS</sub>) — 100 V
Continuous Drain Current (I<sub>D</sub>) at 25°C — 20 A
R<sub>DS(on)</sub> Max — 35 mΩ @ V<sub>GS</sub>=10 V, I<sub>D</sub>=17 A
Gate Threshold (V<sub>GS(th)</sub>) — [DATA_NEEDED: typical Vgs(th) value]
Power Dissipation (P<sub>D</sub>) — 43 W
Suhu Operasi — 175°C max junction
Automotive Qualification — AEC-Q101
Aras MSL — MSL1 (up to 260°C peak reflow)
Avalanche Rated — 100% Avalanche Tested

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