BSC027N06LS5ATMA1 vs IPG20N10S4L35ATMA1 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng BSC027N06LS5ATMA1 sa pamamagitan ng Infineon at IPG20N10S4L35ATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Infineon
BSC027N06LS5ATMA1 BSC027N06LS5ATMA1 - 60V 2.7mOhm N-Ch OptiMOS 5 | Infineon

BSC027N06LS5ATMA1 - 60V 2.7mOhm N-Ch OptiMOS 5 | Infineon

BSC027N06LS5ATMA1 ✓ Nakahanda
Infineon
IPG20N10S4L35ATMA1 IPG20N10S4L35ATMA1 - 100V Dual N-Ch MOSFET, 35mΩ | Infineon

IPG20N10S4L35ATMA1 - 100V Dual N-Ch MOSFET, 35mΩ | Infineon

IPG20N10S4L35ATMA1 ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro BSC027N06LS5ATMA1 IPG20N10S4L35ATMA1
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Manufacturer Infineon Technologies Infineon Technologies
Series OptiMOS™ 5 OptiMOS™, Automotive
Part Status Active —
FET Type N-Channel 2 N-Channel (Dual)
Technology MOSFET (Metal Oxide) —
Drain-Source Voltage (VDS) 60 V —
Gate-Source Voltage (VGS) ±20 V —
Gate Threshold Voltage (VGS(th)) Logic-level —
Continuous Drain Current (ID) at Tc=25°C 100 A —
Continuous Drain Current (ID) at Tc=100°C [DATA_NEEDED: ID at Tc=100C] —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed IDM] —
On-Resistance (RDS(on)) max @ VGS=10V 2.7 mOhm —
On-Resistance (RDS(on)) @ VGS=4.5V [DATA_NEEDED: RDS(on) at 4.5V] —
Power Dissipation (PD) at Tc=25°C 83 W —
Hanay ng Temperature na Operasyon -55°C to +150°C —
Packhaging / Kaso PG-TDSON-8-7 (SuperSO8 5x6) PG-TDSON-8-4 (8-Pin TDSON EP)
Uri ng Pagpapasok Surface Mount Surface Mount
Bilang ng Pin 8 —
Gate Charge (Qg) [DATA_NEEDED: total Qg] —
Avalanche Energy Rated Yes —
Tindminan RoHS Compliant Compliant (Green Product)
MSL (Moisture Sensitivity Level) MSL1 —
Part Number — IPG20N10S4L35ATMA1
FET Feature — Logic Level Gate
Drain-to-Source Voltage (V<sub>DSS</sub>) — 100 V
Continuous Drain Current (I<sub>D</sub>) at 25°C — 20 A
R<sub>DS(on)</sub> Max — 35 mΩ @ V<sub>GS</sub>=10 V, I<sub>D</sub>=17 A
Gate Threshold (V<sub>GS(th)</sub>) — [DATA_NEEDED: typical Vgs(th) value]
Power Dissipation (P<sub>D</sub>) — 43 W
Temperature na Operasyon — 175°C max junction
Automotive Qualification — AEC-Q101
Level ng MSL — MSL1 (up to 260°C peak reflow)
Avalanche Rated — 100% Avalanche Tested

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