BSC042NE7NS3GATMA1 vs BSC0993NDATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci BSC042NE7NS3GATMA1 disebabkan oleh Infineon dan BSC0993NDATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Infineon
BSC042NE7NS3GATMA1 BSC042NE7NS3GATMA1 - 75V N-Ch OptiMOS 3 MOSFET | Infineon

BSC042NE7NS3GATMA1 - 75V N-Ch OptiMOS 3 MOSFET | Infineon

BSC042NE7NS3GATMA1 ✓ Aktif

Pengandingan Spesifikasi

Parametr BSC042NE7NS3GATMA1 BSC0993NDATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Part Number BSC042NE7NS3GATMA1 —
Jenis Transistor N-Channel MOSFET —
Technology OptiMOS 3 OptiMOS 5 trench MOSFET
Drain-Source Voltage (VDS) 75 V —
Continuous Drain Current (ID) at Ta 19 A —
Continuous Drain Current (ID) at Tc 100 A —
RDS(on) max at VGS=10V 4.2 mOhm —
Gate-Source Voltage (VGS) max +/-20 V —
Gate Threshold Voltage (VGS(th)) typ 1.7 V —
Power Dissipation (PD) at Ta 2.5 W —
Power Dissipation (PD) at Tc 125 W —
Gambaran Suhu Operasi -55C to +150C -55C to +150C (junction)
Kemasan PG-TDSON-8-1 (SuperSO8 5x6 mm) PG-TISON-8
Jenis Pemasangan Surface Mount Surface Mount
Aras MSL 1 [DATA_NEEDED: MSL level]
Status RoHS Compliant Compliant
Product Series — OptiMOS 5 30V
Configuration — Dual N-Channel (Array)
Drain-Source Voltage (Vds) — 30 V
Continuous Drain Current (Id) @ Ta — 17 A
Channel Mode — Enhancement
ESD Protection — Yes (integrated)
Lead-Free — Yes
Rds(on) max @ Vgs=10V — [DATA_NEEDED: Rds(on) value]
Gate Threshold Voltage (Vgs(th)) — [DATA_NEEDED: Vgs(th) value]
Total Gate Charge (Qg) — [DATA_NEEDED: Qg value]

Laporan Datasheet & Sumber

Lihat Semua Produk Buat BOQ Minta Bao Harga