BSC042NE7NS3GATMA1 vs BSC0993NDATMA1 比較
詳細並排比較 BSC042NE7NS3GATMA1 由 Infineon 與 BSC0993NDATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | BSC042NE7NS3GATMA1 | BSC0993NDATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | BSC042NE7NS3GATMA1 | — |
| 電晶體類型 | N-Channel MOSFET | — |
| Technology | OptiMOS 3 | OptiMOS 5 trench MOSFET |
| Drain-Source Voltage (VDS) | 75 V | — |
| Continuous Drain Current (ID) at Ta | 19 A | — |
| Continuous Drain Current (ID) at Tc | 100 A | — |
| RDS(on) max at VGS=10V | 4.2 mOhm | — |
| Gate-Source Voltage (VGS) max | +/-20 V | — |
| Gate Threshold Voltage (VGS(th)) typ | 1.7 V | — |
| Power Dissipation (PD) at Ta | 2.5 W | — |
| Power Dissipation (PD) at Tc | 125 W | — |
| 工作溫度範圍 | -55C to +150C | -55C to +150C (junction) |
| 封裝 | PG-TDSON-8-1 (SuperSO8 5x6 mm) | PG-TISON-8 |
| 安裝類型 | Surface Mount | Surface Mount |
| MSL 等級 | 1 | [DATA_NEEDED: MSL level] |
| RoHS 狀態 | Compliant | Compliant |
| Product Series | — | OptiMOS 5 30V |
| Configuration | — | Dual N-Channel (Array) |
| Drain-Source Voltage (Vds) | — | 30 V |
| Continuous Drain Current (Id) @ Ta | — | 17 A |
| Channel Mode | — | Enhancement |
| ESD Protection | — | Yes (integrated) |
| Lead-Free | — | Yes |
| Rds(on) max @ Vgs=10V | — | [DATA_NEEDED: Rds(on) value] |
| Gate Threshold Voltage (Vgs(th)) | — | [DATA_NEEDED: Vgs(th) value] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg value] |