BSC050N04LSGATMA1 vs BSG0813NDIATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci BSC050N04LSGATMA1 disebabkan oleh Infineon dan BSG0813NDIATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | BSC050N04LSGATMA1 | BSG0813NDIATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| FET Type | N-Channel | N-Channel MOSFET Array (half-bridge / synchronous buck) |
| Drain-to-Source Voltage (VDS) | 40 V | — |
| Gate-to-Source Voltage (VGS) | ±20 V | — |
| Continuous Drain Current at 25C (ID, Ta) | 18 A | — |
| Continuous Drain Current at 25C (ID, Tc) | 85 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current IDM] | — |
| Power Dissipation at Ta (PD) | 2.5 W | — |
| Power Dissipation at Tc (PD) | 57 W | — |
| On-State Resistance (RDS(on)) | [DATA_NEEDED: RDS(on) max at VGS=10V] | — |
| On-State Resistance (RDS(on)) at VGS=4.5V | [DATA_NEEDED: RDS(on) at VGS=4.5V] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typ/min/max] | [DATA_NEEDED: VGS(th) value] |
| Technology | OptiMOS 3 (trench MOSFET) | — |
| Kemasan | PG-TDSON-8-5 (TDSON-8 EP, 5x6 mm) | PG-TISON-8 (5.0 x 6.0 mm) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Gambaran Suhu Operasi | -55C to +150C | [DATA_NEEDED: operating temperature range] |
| Avalanche Energy Rated | Yes (single-pulse avalanche) | — |
| Status RoHS | Compliant | Compliant |
| Aras MSL | 1 | 1 (per JEDEC J-STD-020) |
| Manufacturer | — | Infineon Technologies |
| Series | — | OptiMOS 5 Power Block |
| Configuration | — | High-side + Low-side, integrated |
| Drain-Source Voltage (VDS) | — | 25 V |
| Low-Side Continuous Drain Current (ID) | — | 19 A |
| High-Side Continuous Drain Current (ID) | — | 33 A |
| Power Dissipation (PD) | — | 2.5 W |
| RDS(on) - Low-Side | — | [DATA_NEEDED: RDS(on) low-side @ VGS] |
| RDS(on) - High-Side | — | [DATA_NEEDED: RDS(on) high-side @ VGS] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg total] |
| Technology Generation | — | OptiMOS 5 |
| Tetstruktur | — | Synchronous buck half-bridge |