BSC050N04LSGATMA1 vs BSG0813NDIATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng BSC050N04LSGATMA1 sa pamamagitan ng Infineon at BSG0813NDIATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Pagsanggunian na paghahambing
| Parametro | BSC050N04LSGATMA1 | BSG0813NDIATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| FET Type | N-Channel | N-Channel MOSFET Array (half-bridge / synchronous buck) |
| Drain-to-Source Voltage (VDS) | 40 V | — |
| Gate-to-Source Voltage (VGS) | ±20 V | — |
| Continuous Drain Current at 25C (ID, Ta) | 18 A | — |
| Continuous Drain Current at 25C (ID, Tc) | 85 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current IDM] | — |
| Power Dissipation at Ta (PD) | 2.5 W | — |
| Power Dissipation at Tc (PD) | 57 W | — |
| On-State Resistance (RDS(on)) | [DATA_NEEDED: RDS(on) max at VGS=10V] | — |
| On-State Resistance (RDS(on)) at VGS=4.5V | [DATA_NEEDED: RDS(on) at VGS=4.5V] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typ/min/max] | [DATA_NEEDED: VGS(th) value] |
| Technology | OptiMOS 3 (trench MOSFET) | — |
| Packhaging | PG-TDSON-8-5 (TDSON-8 EP, 5x6 mm) | PG-TISON-8 (5.0 x 6.0 mm) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Hanay ng Temperature na Operasyon | -55C to +150C | [DATA_NEEDED: operating temperature range] |
| Avalanche Energy Rated | Yes (single-pulse avalanche) | — |
| Tindminan RoHS | Compliant | Compliant |
| Level ng MSL | 1 | 1 (per JEDEC J-STD-020) |
| Manufacturer | — | Infineon Technologies |
| Series | — | OptiMOS 5 Power Block |
| Configuration | — | High-side + Low-side, integrated |
| Drain-Source Voltage (VDS) | — | 25 V |
| Low-Side Continuous Drain Current (ID) | — | 19 A |
| High-Side Continuous Drain Current (ID) | — | 33 A |
| Power Dissipation (PD) | — | 2.5 W |
| RDS(on) - Low-Side | — | [DATA_NEEDED: RDS(on) low-side @ VGS] |
| RDS(on) - High-Side | — | [DATA_NEEDED: RDS(on) high-side @ VGS] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg total] |
| Technology Generation | — | OptiMOS 5 |
| Topolohiya | — | Synchronous buck half-bridge |