BSC060P03NS3EGATMA1 vs IRF4905STRRPBF Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci BSC060P03NS3EGATMA1 disebabkan oleh Infineon dan IRF4905STRRPBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr BSC060P03NS3EGATMA1 IRF4905STRRPBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Polarity P-Channel P-Channel
Drain-Source Voltage (VDS) -30 V -55 V
Continuous Drain Current (Ta) 17.7 A —
Continuous Drain Current (Tc) 100 A —
On-State Resistance RDS(on) max @ VGS=10V 6 mΩ —
Gate Threshold Voltage VGS(th) typ -2.5 V —
Total Gate Charge Qg @ VGS=10V 81 nC —
Input Capacitance Ciss 6.02 nF —
Output Capacitance Coss 2.81 nF —
Reverse Transfer Capacitance Crss 220 pF —
Power Dissipation (Ta) 2.5 W —
Power Dissipation (Tc) 83 W —
Gambaran Suhu Operasi -55°C to +150°C —
Kemasan PG-TDSON-8-1 (SuperSO8 5x6) D2PAK (TO-263-3)
Technology OptiMOS™ P-channel Trench HEXFET (Advanced Process)
Jenis Pemasangan Surface Mount Surface Mount
Status RoHS Compliant Compliant
Continuous Drain Current (ID) at TC=25C — -74 A
Continuous Drain Current (ID) at TC=100C — [DATA_NEEDED: ID at TC=100C]
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current]
Gate-Source Voltage (VGS) max — ±20 V
RDS(on) max at VGS=-10V — 20 mOhm
RDS(on) max at VGS=-4.5V — [DATA_NEEDED: RDS(on) at VGS=-4.5V]
Gate Threshold Voltage (VGS(th)) — -2.0 V to -4.0 V
Total Gate Charge (Qg) — 120 nC
Power Dissipation (PD) at TC=25C — 170 W
Suhu Hubungan Operasi — -55 C to +175 C
Lead-Free — Yes

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