BSC060P03NS3EGATMA1 vs IRF4905STRRPBF Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng BSC060P03NS3EGATMA1 sa pamamagitan ng Infineon at IRF4905STRRPBF sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Infineon
BSC060P03NS3EGATMA1 BSC060P03NS3EGATMA1 - 30V P-Ch MOSFET 6mΩ 100A OptiMOS | Infineon

BSC060P03NS3EGATMA1 - 30V P-Ch MOSFET 6mΩ 100A OptiMOS | Infineon

BSC060P03NS3EGATMA1 ✓ Nakahanda
Infineon
IRF4905STRRPBF IRF4905STRRPBF - 55V P-Channel HEXFET MOSFET | Infineon

IRF4905STRRPBF - 55V P-Channel HEXFET MOSFET | Infineon

IRF4905STRRPBF ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro BSC060P03NS3EGATMA1 IRF4905STRRPBF
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Polarity P-Channel P-Channel
Drain-Source Voltage (VDS) -30 V -55 V
Continuous Drain Current (Ta) 17.7 A —
Continuous Drain Current (Tc) 100 A —
On-State Resistance RDS(on) max @ VGS=10V 6 mΩ —
Gate Threshold Voltage VGS(th) typ -2.5 V —
Total Gate Charge Qg @ VGS=10V 81 nC —
Input Capacitance Ciss 6.02 nF —
Output Capacitance Coss 2.81 nF —
Reverse Transfer Capacitance Crss 220 pF —
Power Dissipation (Ta) 2.5 W —
Power Dissipation (Tc) 83 W —
Hanay ng Temperature na Operasyon -55°C to +150°C —
Packhaging PG-TDSON-8-1 (SuperSO8 5x6) D2PAK (TO-263-3)
Technology OptiMOS™ P-channel Trench HEXFET (Advanced Process)
Uri ng Pagpapasok Surface Mount Surface Mount
Tindminan RoHS Compliant Compliant
Continuous Drain Current (ID) at TC=25C — -74 A
Continuous Drain Current (ID) at TC=100C — [DATA_NEEDED: ID at TC=100C]
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current]
Gate-Source Voltage (VGS) max — ±20 V
RDS(on) max at VGS=-10V — 20 mOhm
RDS(on) max at VGS=-4.5V — [DATA_NEEDED: RDS(on) at VGS=-4.5V]
Gate Threshold Voltage (VGS(th)) — -2.0 V to -4.0 V
Total Gate Charge (Qg) — 120 nC
Power Dissipation (PD) at TC=25C — 170 W
Temperature ng Junction na Operasyon — -55 C to +175 C
Lead-Free — Yes

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