BSC0911NDATMA1 vs BSC066N06NSATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci BSC0911NDATMA1 disebabkan oleh Infineon dan BSC066N06NSATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | BSC0911NDATMA1 | BSC066N06NSATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | — |
| Product Family | OptiMOS 25V | — |
| Configuration | Dual N-Channel (2 N-CH) | — |
| Drain-Source Voltage (VDS) | 25 V | 60 V |
| Continuous Drain Current (ID) | 18 A | — |
| Pulsed Drain Current (IDM) | 30 A | 256 A |
| Power Dissipation (PD) | 1 W | — |
| Kemasan | PG-TISON-8 (8-PowerTDFN) | PG-TDSON-8-6 (TDSON EP) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Suhu Operasi | -55C to +150C (junction) | — |
| Channel Type | N-Channel Enhancement Mode | — |
| Technology | OptiMOS trench MOSFET | OptiMOS 5 60 V trench-gate |
| Gate Threshold (VGS(th)) | [DATA_NEEDED: gate threshold voltage] | — |
| RDS(on) max @ VGS=10V | [DATA_NEEDED: RDS(on) at 10V VGS] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: total gate charge] | 26 nC (typ) |
| Status RoHS | Compliant | Compliant |
| Aras MSL | [DATA_NEEDED: MSL rating] | 1 |
| Continuous Drain Current (ID) at TC=25°C | — | 64 A |
| Continuous Drain Current (ID) at TC=100°C | — | 45 A |
| Gate-Source Voltage (VGS) max | — | ±20 V |
| Static Drain-Source On-Resistance (RDS(on)) at VGS=10V | — | 6.6 mΩ (max) |
| Gate Threshold Voltage (VGS(th)) | — | 1.7 V (typ) |
| Power Dissipation (PD) at TC=25°C | — | 46 W |
| Power Dissipation (PD) at TA=25°C | — | 2.5 W |
| Thermal Resistance, Junction-to-Case (RθJC) | — | 1.3 °C/W |
| Suhu Hubungan Operasi | — | -55°C to +150°C |